Abstract: A method for producing a silicon solar cell, including inline etching of a saw damaged as-cut Si wafer, the inline etching including etching a first surface of the as-cut Si wafer with an etchant solution, wherein a first amount is etched from the first surface and the first surface is polish etched; and etching a second surface of the as-cut Si wafer with the etchant solution, wherein a second amount is etched from the second surface, wherein the first amount is greater than the second amount, wherein the saw damaged as-cut Si wafer is not subjected to an etching prior to said inline etching.

Abstract: The present invention relates to a method for acidic surface etching of a silicon wafer, such as those used for solar cells, comprising contacting at least one surface of a silicon wafer as cut with an acidic etching agent, provided that the wafer is, prior to the acidic etching, not subjected to an alkaline etching step or process. Further, the present invention is directed to Si wafer, photovoltaic cells, PERC photovoltaic cells and solar modules produced according to the method of the present invention.

Abstract: An etching liquid for texturing a silicon wafer surface is provided. The etching liquid may include an aqueous solution of at least one alkaline etching agent and at least one polysaccharide or derivative thereof. Also provided is a process for texture etching a silicon wafer using the etching liquid of the invention.

Abstract: An etching liquid for texturing a silicon wafer surface is provided. The etching liquid may include an aqueous solution of at least one alkaline etching agent and at least one polysaccharide or derivative thereof. Also provided is a process for texture etching a silicon wafer using the etching liquid of the invention.

Abstract: An etching solution for texturing a silicon wafer surface is provided. The etching solution may include an aqueous solution of at least one alkaline etching agent and at least one organic compound, wherein the organic compound is a polyalcohol comprising at least four hydroxy groups or a derivative thereof.

Abstract: A new and improved etching solution and etching method provide wet chemical pyramidal texture etching of (100) silicon surfaces. A uniform and completely pyramidal texture etching of silicon surfaces is achieved with an etching solution including water, an alkaline reagent, and isopropanol together with an aqueous alkaline ethylene glycol solution.

Abstract: A new and improved etching solution and etching method provide wet chemical pyramidal texture etching of (100) silicon surfaces. A uniform and completely pyramidal texture etching of silicon surfaces is achieved with an etching solution including water, an alkaline reagent, and isopropanol together with an aqueous alkaline ethylene glycol solution.

Abstract: Solar cells made of crystalline are metal coated. Combined front side and rear side metal coating based on a thick-film process is proposed, in which even very fine thick-film conductor track structures are sufficiently reinforced by photo-induced currentless deposition of a metal. Well adhering improved conductor track structures for the front side metal coating can be produced using the simplified process.

Abstract: A process for producing front and rear contacts on a solar cell provides for producing a channel structure on the passivation layer of a silicon wafer, producing a rear contact by printing and firing a silver paste that has an aluminum dopant, treating the wafer with a palladium solution containing fluoride to produce a nucleation layer on the surface of the channel structure, and reinforcing the nucleation layer by depositing a further metal.

Abstract: A method for manufacturing high-efficiency solar cells from polycrystalline or monocrystalline semiconductor material is disclosed. Backside contacts are printed on with a metal-containing paste and front side contacts are deposited finely-structured photo-induced. To that end, a nickel layer is deposited photo-induced directly on the semiconductor that is uncovered in openings or trenches within a passivation layer on the front side. The front side contact is reinforced by a further metal layer that is likewise produced by currentless deposition.