Abstract: A nonvolatile, high-speed, bit-addressable memory device is disclosed. A tunnel barrier layer is disposed between a charge supply medium and a charge storage medium, with the tunnel barrier layer having a crested energy profile with a maximum half-way between the charge storage layer and the charge supply layer.

Abstract: A thin-film cryotron using a distributed Josephson junction is proposed. The functions of the Josephson junction are performed by a bridge of variable thickness. The control line is located above one of the contact electrodes, and it may be displaced from the boundary between the electrode and the bridge jumper by a distance less than the width of the bridge jumper or it may be placed so that one of its sides is coincident with this boundary. The electrode which has the control line located above it may be provided with a hole made near the control line on the side opposite to the jumper.

Abstract: Disclosure is made of a film cryotron comprising a super-conductive ground plane and two superconductive electrodes arranged on said ground plane. The ground plane and electrodes are all insulated from one another. The electrodes are interconnected by an elongated distributed Josephson junction and have input lines and a control line arranged along the Josephson junction and above one of the electrodes. The electrode under the control line is shaped as a strip extending along the Josephson junction. The input line is connected to this electrode at a point spaced from the points at which the control line intersects the boundaries of this electrode and from the ends of the junction at a distance which is greater than the width of said electrode and the depth of the magnetic field penetration into the junction. At the point of connection to the electrode, the input line has a width which is less than that of the electrode.