Abstract: A breakdown-avalanche photon sensors array (10) is shown, which is implemented in CMOS technology, wherein the breakdown-avalanche photon sensors array (10) has single photon sensitivity, comprising: a semiconductor substrate (11); and an epitaxial layer (12), which is located above the semiconductor substrate (11); and a breakdown-avalanche photon sensor (13), which is located within the epitaxial layer (12), wherein the breakdown avalanche photon sensor (13) comprises: a guard ring (3) and a quenching element (5), which is electrically connected to the breakdown-avalanche photon sensor (13), wherein the quenching element (5) is configured for quenching the breakdown-avalanche photon sensor (13) after detection of a photon. Furthermore, a digital breakdown-avalanche photon sensor (11), a digital breakdown-avalanche photon sensors array (20)and an digital photomultiplier imager (40) are shown.

Abstract: The present invention relates to a novel polymer dispersion and the application in conditioning fabrics. The present invention is further a fabric conditioning composition comprising the same. The fabric conditioning composition provided in the present invention has favorable fabric conditioning performance.

Abstract: A fabric softener composition comprising: a. 1 to 20 wt. % ionic compound of general formula I: (I) wherein b. 0.1 to 20 wt. % fatty co-softener; and c. Water.

Abstract: A fabric softener composition comprising: a. 1 to 20 wt. % ionic compound of general formula I: (I) b. 0.1 to 30 wt. % perfume; and c. Water.

Abstract: The present invention relates to a composition comprising: (a) a quaternary ammonium compound; (b) a cationic polysaccharide; (c) a non-ionic polysaccharide; and (d) an amino silicone compound having a degree of polymerization of 300 to 10,000.

Abstract: The present invention relates to a heat-insulating material, in particular in the form of a solid foam, based on silica particles of submicron porosity, this material incorporating two different ranges of porosities, advantageously including a first range consisting of (macro)pores with diameters of between 10 microns and 3 mm, and a second range consisting of submicron pores with diameters greater than 4 nm and less than 300 nm, the pore volume of said submicron pores being at least 1 cm3/g and the mass per unit volume of said insulating material being less than 300 kg/m3, and also relates to the process for obtaining the same.

Abstract: Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure.

Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each includes a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.

Abstract: A reader stack, such as for a magnetic storage device, the stack having a top synthetic antiferromagnetic (SAF) layer, a magnetic capping layer adjacent to the top SAF layer, an RKKY coupling layer adjacent to the magnetic capping layer opposite the top SAF layer, and a free layer adjacent to the RKKY coupling layer opposite the magnetic capping layer. Also included is a method for biasing a free layer in a reader stack by providing an exchange coupling between the free layer and a top synthetic antiferromagnetic (SAF) layer using a layer having RKKY coupling property positioned between the free layer and the top SAF layer and a magnetic capping layer between the SAF layer and the layer having RKKY coupling property.

Abstract: A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).

Abstract: A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.

Abstract: A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).

Abstract: An apparatus disclosed herein includes a sensor stack including a first layer and an AFM stabilized bottom shield in proximity to the first layer, wherein the AFM stabilized bottom shield is magnetically coupled to the first layer. The apparatus reduces shield-to-shield spacing. The pinned layer of the bottom shield and a pinned layer of the sensor stack are stabilized using the AFM layer in the bottom shield. In one implementation, the bottom shield is made of the SAF structure, with the top layer of the structure adjacent to a pinned layer in the sensor stack.

Abstract: Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure.

Abstract: A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).

Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more alloyed layers that each includes a ferromagnetic material and a refractory material. The alloyed layers are provided adjacent to a shield element or between soft magnetic layers of the sensor stack.

Abstract: A reader stack, such as for a magnetic storage device, the stack having a top synthetic antiferromagnetic (SAF) layer, a magnetic capping layer adjacent to the top SAF layer, an RKKY coupling layer adjacent to the magnetic capping layer opposite the top SAF layer, and a free layer adjacent to the RKKY coupling layer opposite the magnetic capping layer. Also included is a method for biasing a free layer in a reader stack by providing an exchange coupling between the free layer and a top synthetic antiferromagnetic (SAF) layer using a layer having RKKY coupling property positioned between the free layer and the top SAF layer and a magnetic capping layer between the SAF layer and the layer having RKKY coupling property.

Abstract: Implementations disclosed herein provide a magnetoresistive (MR) sensor including a free layer comprising a first layer of CoFeB or CoFe/CoFeB and a second layer made of an alloyed layer including a ferromagnetic material and a refractory material. An implementation of the MR sensor further includes a cap layer adjacent to the second layer wherein the cap layer does not include any tantalum.

Abstract: A reader sensor that has a sensor stack with an AFM layer, a pinned stabilization layer, and a pinned layer, with the pinned stabilization layer closer to the AFM layer than to the pinned layer. The stack also includes a non-magnetic spacer layer between and in contact with the pinned stabilization layer and with the pinned layer. A magnetic coupling between the pinned stabilization layer and the pinned layer is no more than 50% of a magnetic coupling between the pinned stabilization layer and the AFM layer.

Abstract: Implementations disclosed herein provide a method comprising rocking an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure, wherein an angular amplitude of rocking the effective annealing magnetic field between a first positive angle and a second negative angle gradually decreases towards the desired orientation of pinning in the AFM/PL structure.