Abstract: A light emission system including a first sub-system. The first sub-system includes a storage inductor having a first inductor terminal coupled to a voltage source and a second inductor terminal; a storage capacitor having a first capacitor terminal coupled to the first terminal of the storage inductor, and a second capacitor terminal coupled to a reference voltage node; a switch having a control terminal coupled to a driver circuitry that sends a modulation signal to open or close the switch, a first channel terminal coupled to the second inductor terminal, and a second channel terminal coupled to the reference voltage node; and a load having N laser diodes coupled in series, where the N laser diodes include a first laser diode having a terminal coupled to the second inductor terminal, and an N-th laser diode having a terminal coupled to the reference voltage node.

Abstract: A light emission apparatus includes a transistor comprising a control terminal, a first channel terminal, and a second channel terminal, wherein the control terminal is configured to receive a modulation signal, the first channel terminal is configured to generate a driving signal according to the modulation signal, and the second channel terminal is coupled to a fixed voltage; and a load comprising: a first terminal; a second terminal, wherein the first terminal is coupled to the first channel terminal of the transistor and the second terminal is coupled to the fixed voltage; a laser diode configured to emit a light according to the driving signal; and a first capacitor coupled to the laser diode, configured to isolate a DC current on the first terminal of the transistor.

Abstract: A light emission apparatus includes a transistor comprising a control terminal, a first channel terminal, and a second channel terminal, wherein the control terminal is configured to receive a modulation signal, the first channel terminal is configured to generate a driving signal according to the modulation signal, and the second channel terminal is coupled to a fixed voltage; and a load comprising: a first terminal; a second terminal, wherein the first terminal is coupled to the first channel terminal of the transistor and the second terminal is coupled to the fixed voltage; a laser diode configured to emit a light according to the driving signal; and a first capacitor coupled to the laser diode, configured to isolate a DC current on the first terminal of the transistor.

Abstract: A method for forming plural waveguide structures in an optical substrate, such as lithium niobate, employs multiple stages of annealed proton exchange. In each stage, the substrate is masked to define a region corresponding to at least one waveguide structure. The mask-defined region is exposed to a proton exchange agent for a predetermined time and at a predetermined temperature, and the substrate is then annealed at predetermined time/temperature conditions. By selecting appropriate process parameters for each APE stage, each of the resultant waveguide structures may be optimized for desired physical and optical characteristics. The method may be utilized, for example, to fabricate sub-Rayleigh range couplers having high coupling efficiencies.

Abstract: An electro-optic modulator is provided which comprises an electro-optic substrate, a Mach-Zehnder Interferometer optical waveguide structure, and at least two electrodes. In an embodiment of the invention, the Mach-Zehnder Interferometer optical waveguide structure has a mode transition section for reducing the optical mode size and bringing the optical mode center closer to the upper surface of the electro-optic substrate. In another embodiment, there is a laterally recessed adhesion layer disposed between the electrodes and the electro-optic substrate. The recess in this adhesion layer minimizes the dissipative effect that the adhesion layer would ordinarily have on the propagation of RF energy along the electrode. In yet another embodiment, a dual drive arrangement is described for driving an electro-optic modulator. Finally, an integrated modulator array is described.