Patents by Inventor Konstantin Petrovich Mogilnikov

Konstantin Petrovich Mogilnikov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6662631
    Abstract: A method and apparatus for evaluation of films, such as low-k thin films with nano-scale pores, are provided. The evaluation may include characterization of the pore structure, the characterization results in determining pore sizes, hence obtaining pore size data. Moreover, the characterization may result in a non-destructive evaluation of mechanical properties, in particular the Young's Modulus, or the effect of interfering physical & chemical factors such as Pore Killers. Further, in line monitoring or studying of pore structure porosity and pore size distribution (PSD) of low-k films and evaluation of the mechanical properties of porous low-k films simultaneously using the same set of experimental data is provided.
    Type: Grant
    Filed: July 12, 2002
    Date of Patent: December 16, 2003
    Assignees: Interuniversitair Microelektronica Centrum, Technokom-Centre Advanced Technology, XPEQT
    Inventors: Mikhail Rodionovich Baklanov, Konstantin Petrovich Mogilnikov, Karen Maex, Denis Shamiryan, Fedor Nikolaevich Dultsev
  • Publication number: 20030094032
    Abstract: A method and apparatus for evaluation of films, such as low-k thin films with nano-scale pores, are provided. The evaluation may include characterization of the pore structure, the characterization results in determining pore sizes, hence obtaining pore size data. Moreover, the characterization may result in a non-destructive evaluation of mechanical properties, in particular the Young's Modulus. Further, in line monitoring or studying of pore structure porosity and pore size distribution (PSD) of low-K films and evaluation of the mechanical properties of porous low-k films simultaneously using the same set of experimental data is provided.
    Type: Application
    Filed: July 12, 2002
    Publication date: May 22, 2003
    Inventors: Mikhail Rodionovich Baklanov, Konstantin Petrovich Mogilnikov, Karen Maex, Denis Shamiryan, Fedor Nikolaevich Dultsev
  • Patent number: 6435008
    Abstract: The present invention is related to an apparatus and a non-destructive method for determining the porosity of an element, particularly a thin film, formed on a substrate, said substrate being positioned in a pressurized chamber, said chamber being at a predetermined pressure and at a predetermined temperature. According to this method a gaseous substance like e.g. toluene vapour is admitted in said chamber and after a predetermined period of time the porosity of the thin film is determined by means of at least on ellipsometric measurement. Particularly, the optical characteristics resulting from this in-situ ellipsometry are used to determine the amount of gaseous substance condensed in the pores of the film. These amounts are used to calculate the porosity of the film.
    Type: Grant
    Filed: August 16, 2001
    Date of Patent: August 20, 2002
    Assignees: Interuniversitair Microelecktronica Centrum, Centre for Advanced Technologies Technokom
    Inventors: Mikhail Rodionovich Baklanov, Fedor Nikolaevich Dultsev, Konstantin Petrovich Mogilnikov, Karen Maex
  • Publication number: 20010054306
    Abstract: The present invention is related to an apparatus and a non-destructive method for determining the porosity of an element, particularly a thin film, formed on a substrate, said substrate being positioned in a pressurized chamber, said chamber being at a predetermined pressure and at a predetermined temperature. According to this method a gaseous substance like e.g. toluene vapour is admitted in said chamber and after a predetermined period of time the porosity of the thin film is determined by means of at least on ellipsometric measurement. Particularly, the optical characteristics resulting from this in-situ ellipsometry are used to determine the amount of gaseous substance condensed in the pores of the film. These amounts are used to calculate the porosity of the film.
    Type: Application
    Filed: August 16, 2001
    Publication date: December 27, 2001
    Inventors: Mikhail Rodionovich Baklanov, Fedor Nikolaevich Dultsev, Konstantin Petrovich Mogilnikov, Karen Maex
  • Patent number: 6319736
    Abstract: The present invention is related to an apparatus and a non-destructive method for determining the porosity of an element, particularly a thin film, formed on a substrate, said substrate being positioned in a pressurized chamber, said chamber being at a predetermined pressure and at a predetermined temperature. According to this method a gaseous substance like e.g. toluene vapor is admitted in said chamber and after a predetermined period of time the porosity of the thin film is determined by means of at least on ellipsometric measurement. Particularly, the optical characteristics resulting from this in-situ ellipsometry are used to determine the amount of gaseous substance condensed in the pores of the film. These amounts are used to calculate the porosity of the film.
    Type: Grant
    Filed: June 19, 2000
    Date of Patent: November 20, 2001
    Assignee: Interuniversitair Microelektronica Centrum (IMEC)
    Inventors: Mikhail Rodionovich Baklanov, Fedor Nikolaevich Dultsev, Konstantin Petrovich Mogilnikov, Karen Maex