Patents by Inventor Konstantin S. Golovanivsky
Konstantin S. Golovanivsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6327338Abstract: A small, low cost, low power, and portable x-ray source that produces an x-ray flux that is sufficient to produce high quality x-ray images on suitable x-ray sensitive films. The source includes a vacuumated chamber that is filled with a heavy atomic weight gas at low pressure and an x-ray emitter. The chamber is in a magnetic field and an oscillating electric field and generates an Electron Cyclotron Resonance (ECR) plasma having a ring of energetic electrons inside the chamber. The electrons bombard the x-ray emitter which in turn produces x-ray radiation in a given direction. A pair of magnetic members generate an axisymmetric magnetic mirror trap inside the chamber. The chamber may be nested within a microwave resonant cavity and between the magnets, or the chamber and microwave cavity may be a single composite structure. The source is useful to make x-ray photographs virtually anywhere and may be battery powered.Type: GrantFiled: November 20, 1995Date of Patent: December 4, 2001Assignee: Ruxan Inc.Inventors: Konstantin S. Golovanivsky, Valeri D. Dugar-Zhabon
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Patent number: 5461656Abstract: An X-ray source that produces X-rays as a result of igniting an electron cyclotron resonance plasma inside a vacuumated dielectric spherical chamber filled with a heavy atomic weight, non-reactive gas or gas mixture at low pressure. The spherical chamber is located inside a non-vacuumated microwave resonant cavity that is in turn located between two magnets to form a magnetic mirror. Conventional microwave energy fed into the resonant cavity ignites the plasma and creates a hot electron ring which electrons bombard the heavy gas and dielectric material to create an X-ray emission. The X-ray source is suitable for surface and volume sterilization of foodstuffs, packaged goods, medical supplies, blood products and other materials and medical diagnostic and therapeutic devices such as tomography, mammography and radiology.Type: GrantFiled: May 3, 1994Date of Patent: October 24, 1995Assignee: Ruxam, Inc.Inventors: Konstantin S. Golovanivsky, Valeri D. Dugar-Zhabon
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Patent number: 5355399Abstract: A small, low cost, low power, and portable x-ray source that produces an x-ray flux that is sufficient to produce high quality x-ray images on suitable x-ray sensitive films. The source includes a vacuumated chamber that is filled with a heavy atomic weight gas at low pressure and an x-ray emitter. The chamber is in a magnetic field and an oscillating electric field and generates an Electron Cyclotron Resonance (ECR) plasma having a ring of energetic electrons inside the chamber. The electrons bombard the x-ray emitter which in turn produces x-ray radiation in a given direction. A pair of magnetic members generate an axisymmetric magnetic mirror trap inside the chamber. The chamber may be nested within a microwave resonant cavity and between the magnets, or the chamber and microwave cavity may be a single composite structure. The source is useful to make x-ray photographs virtually anywhere and may be battery powered.Type: GrantFiled: August 25, 1992Date of Patent: October 11, 1994Assignee: Ruxam, Inc.Inventors: Konstantin S. Golovanivsky, Valeri D. Dugar-Zhabon
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Patent number: 5352899Abstract: Methods and apparatus for etching ultra fine lines of impurities on semiconductors and other materials. A cold diverging ion beam is generated, made to converge, encoded using a mask to correspond to an image, and then used to etch impurities on the substrate. An ECR plasma source is used to generate a warm plasma. A cooled neutral target gas is penetrated by the warm plasma ions so that the plasma ion charge is transferred to the cool target gas to provide cool ions, which are then extracted to provide a cryogenic ion beam. The ion beam is made converging and then encoded by the mask. The ion beam also may be transformed into an atom beam in a charge exchange cell.Type: GrantFiled: August 18, 1992Date of Patent: October 4, 1994Assignee: Ruxam, Inc.Inventors: Konstantin S. Golovanivsky, Erazm M. Omeljanovsky
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Patent number: 5336533Abstract: Apparatus and methods for forming a source of dissociated and excited molecules from a working gas-plasma interaction for use in treating substrates such as hydrogen passivation of semiconductors. A plasma is generated under resonant conditions and confined in a reaction chamber by a magnetic mirror trap. The working gas is injected into the reaction chamber to intersect the confined plasma. The interaction forms a neutral species of dissociated and excited molecules and a charged species of ions and electrons. A multipole magnetic field is used to stabilize the plasma and maintain the charged particles of the plasma and the charged species away from the reaction chamber. The charged species is confined to the plasma by the net magnetic field so that the neutral species flows out of the reaction chamber for processing of substrates, e.g., hydrogenation of semiconductor materials.Type: GrantFiled: October 22, 1993Date of Patent: August 9, 1994Assignee: Ruxam, Inc.Inventors: Alexander A. Balmashnov, Konstantin S. Golovanivsky, Erzam M. Omeljanovsky, Andrew V. Pakhomov, Alexander Y. Polyakov
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Patent number: 5327475Abstract: Apparatus and methods for submicron lithography of semiconductor materials, circuits and other objects. A source of multiply charged ions is applied to a thin layer of electrically conductive material. The recombination of ions and free electrons in the layer produce soft x-ray radiation which used to irradiate an object. The object may include a semiconductor substrate, an x-ray sensitive resist, and an x-ray absorbing mask for forming semiconductor circuit devices. The soft x-rays are produced by careful selection of the type and energy of multiply charged ions and the thickness of the thin electro-conductive layer, which may be a light element metal.Type: GrantFiled: August 18, 1992Date of Patent: July 5, 1994Assignee: Ruxam, Inc.Inventors: Konstantin S. Golovanivsky, Erazm M. Omeljanovsky
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Patent number: 5323442Abstract: An X-ray source that produces X-rays as a result of igniting an electron cyclotron resonance plasma inside a vacuumated dielectric spherical chamber filled with a heavy atomic weight, non-reactive gas or gas mixture at low pressure. The spherical chamber is located inside a non-vacuumated microwave resonant cavity that is in turn located between two magnets to form a magnetic mirror. Conventional microwave energy fed into the resonant cavity ignites the plasma and creates a hot electron ring which electrons bombard the heavy gas and dielectric material to create an X-ray emission. The X-ray source is suitable for surface and volume sterilization of foodstuffs, packaged goods, medical supplies, blood products and other materials and medical diagnostic and therapeutic devices such as tomography, mammography and radiology.Type: GrantFiled: February 28, 1992Date of Patent: June 21, 1994Assignee: Ruxam, Inc.Inventors: Konstantin S. Golovanivsky, Valeri D. Dugar-Zhabon
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Patent number: 5282899Abstract: Apparatus for forming a source of dissociated and excited molecules from a working gas-plasma interaction for use in treating substrates such as hydrogen passivation of semiconductors. A plasma is generated under resonant conditions and confined in a reaction chamber by a magnetic mirror trap. The working gas is injected into the reaction chamber to intersect the confined plasma. The interaction forms a neutral species of dissociated and excited molecules and a charged species of ions and electrons. A multipole magnetic field is used to stabilize the plasma and maintain the charged particles of the plasma and the charged species away from the reaction chamber. The charged species is confined to the plasma by the net magnetic field so that the neutral species flows out of the reaction chamber for processing of substrates, e.g., hydrogenation of semiconductor materials.Type: GrantFiled: June 10, 1992Date of Patent: February 1, 1994Assignee: Ruxam, Inc.Inventors: Alexander A. Balmashnov, Konstantin S. Golovanivsky, Erzam M. Omeljanovsky, Andrew V. Pakhomov, Alexander Y. Polyakov