Abstract: An apparatus for cleaning a wafer has a first chamber and a component coupled to the first chamber. The first chamber has a first input to form de-ionized water droplets. The component is coupled to the first chamber to further atomize and apply the atomized de-ionized water droplets on the wafer.

Abstract: A method and apparatus for cleaning a backside of a substrate is disclosed. The method includes placing the substrate parallel to a platter, wherein the backside of the substrate is facing a top side of the platter in a spaced apart relation, thus defining a gap therebetween. Subsequently, a liquid is flowed through the platter and into continuous contact with the entire backside of the substrate and the top side of the platter.

Abstract: A CMP tool can be closed loop controlled by using data, for a first polished wafer, obtained by an in-line metrology station, an in-situ monitoring system, and/or an inter-platen monitoring system to continually monitor and qualify polishing rates for the processing of subsequent polished wafers.

Abstract: A CMP station can be closed loop controlled by using data obtained by an inline metrology station from a first polished wafer to affect the processing of subsequent polished wafers. The first wafer is polished and measured by the inline metrology station. The metrology station measures at various points the array dielectric thickness, field dielectric thickness, barrier residue thickness and metal residue thickness. The data is then inputted into an algorithm and polishing parameter outputs are calculated. The outputs are sent to the CMP station and used to supplement or replace the previous polishing parameters. Subsequent wafers are polished on the CMP station using the revised polishing parameters.