Abstract: A novel and useful a single layer RFIC/MMIC structure including a package and related redistribution layer (RDL) based low loss grounded coplanar transmission line. The structure includes a package molded around an RF circuit die with a single redistribution layer (RDL) fabricated on the surface thereof mounted on an RF printed circuit board (PCB) via a plurality of solder balls. Coplanar transmission lines are fabricated on the RDL to conduct RF output signals from the die to PCB signal solder balls. The signal trace transition to the solder balls are funnel shaped to minimize insertion loss and maximize RF isolation between channels. A conductive ground shield is fabricated on the single RDL and operative to shield the plurality of coplanar transmission lines.

Abstract: A novel and useful a single layer RFIC/MMIC structure including a package and related redistribution layer (RDL) based low loss grounded coplanar transmission line. The structure includes a package molded around an RF circuit die with a single redistribution layer (RDL) fabricated on the surface thereof mounted on an RF printed circuit board (PCB) via a plurality of solder balls. Coplanar transmission lines are fabricated on the RDL to conduct RF output signals from the die to PCB signal solder balls. The signal trace transition to the solder balls are funnel shaped to minimize insertion loss and maximize RF isolation between channels. A conductive ground shield is fabricated on the single RDL and operative to shield the plurality of coplanar transmission lines.

Abstract: Certain aspects of the present disclosure generally relate to an amplifier configured to process signals received in different frequency bands, where at least a portion of the amplifier is shared between different modes corresponding to the different frequency bands. One example circuit generally includes an amplifier having at least one first transistor configured to amplify a first signal received in a first mode of operation (e.g., associated with a particular frequency band), and at least one second transistor configured to amplify a second signal received in a second mode of operation. The amplifier may also include a transformer comprising a primary winding and a secondary winding, and one or more switches configured to selectively couple the primary winding to the first transistor or the second transistor based on the first mode or the second mode of operation, respectively. In certain aspects, the transformer may be coupled to a transconductance circuit.

Abstract: Certain aspects of the present disclosure generally relate to an amplifier configured to process signals received in different frequency bands, where at least a portion of the amplifier is shared between different modes corresponding to the different frequency bands. One example circuit generally includes an amplifier having at least one first transistor configured to amplify a first signal received in a first mode of operation (e.g., associated with a particular frequency band), and at least one second transistor configured to amplify a second signal received in a second mode of operation. The amplifier may also include a transformer comprising a primary winding and a secondary winding, and one or more switches configured to selectively couple the primary winding to the first transistor or the second transistor based on the first mode or the second mode of operation, respectively. In certain aspects, the transformer may be coupled to a transconductance circuit.