Patents by Inventor Konstantins Jefimovs

Konstantins Jefimovs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11881408
    Abstract: Elements of photonic devices with high aspect ratio patterns are fabricated. A stabilizing catalyst that forms a stable metal-semiconductor alloy allows to etch a substrate in vertical direction even at very low oxidant concentration without external bias or magnetic field. A metal layer on the substrate reacts with the oxidant contained in air and catalyzes the semiconductor etching by the etchant. Air in continuous flow at the metal layer allows to maintain constant the oxidant concentration in proximity of the metal layer. The process can continue for a long time in order to form very high aspect ratio structures in the order of 10,000:1. Once the etched semiconductor structure is formed, the continuous air flow supports the reactant species diffusing through the etched semiconductor structure to maintain a uniform etching rate. The continuous air flow supports the diffusion of reaction by-products to avoid poisoning of the etching reaction.
    Type: Grant
    Filed: July 28, 2020
    Date of Patent: January 23, 2024
    Assignee: Paul Scherrer Institut
    Inventors: Lucia Romano, Konstantins Jefimovs, Matias Kagias, Joan Vila Comamala, Marco Stampanoni
  • Publication number: 20220293427
    Abstract: Elements of photonic devices with high aspect ratio patterns are fabricated. A stabilizing catalyst that forms a stable metal-semiconductor alloy allows to etch a substrate in vertical direction even at very low oxidant concentration without external bias or magnetic field. A metal layer on the substrate reacts with the oxidant contained in air and catalyzes the semiconductor etching by the etchant. Air in continuous flow at the metal layer allows to maintain constant the oxidant concentration in proximity of the metal layer. The process can continue for a long time in order to form very high aspect ratio structures in the order of 10,000:1. Once the etched semiconductor structure is formed, the continuous air flow supports the reactant species diffusing through the etched semiconductor structure to maintain a uniform etching rate. The continuous air flow supports the diffusion of reaction by-products to avoid poisoning of the etching reaction.
    Type: Application
    Filed: July 28, 2020
    Publication date: September 15, 2022
    Inventors: Lucia Romano, Konstantins Jefimovs, Matias Kagias, Joan Vila Comamala, Marco Stampanoni
  • Patent number: 9211542
    Abstract: A sample support plate (100) for a variety of possible applications, including MALDI mass spectrometry, is disclosed. A plurality of spatially separated sample recipient sites (101) are arranged on the surface of a substrate. The recipient sites are mutually separated by areas having a different wettability than the recipient sites. They are arranged in a plurality of rows consisting of a plurality of recipient sites whose centers are regularly spaced along a first direction with a predetermined periodicity (D1), the rows being regularly spaced along a second direction perpendicular to the first direction with a predetermined centerline distance (D2). Each recipient site has a maximum lateral dimension that is preferably smaller than the diameter of a beam spot (104) of a desorption laser beam (103).
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: December 15, 2015
    Assignees: EIDGENOSSISCHE TECHNISCHE HOCHSCHULE ZURICH, EMPA EIDG. MATERIALPRUFUNGS—UND FORSCHUNGSANSTALT
    Inventors: Pawel Urban, Renato Zenobi, Konstantins Jefimovs, Andrea Amantonico, Stephan Fagerer, Nils Goedecke
  • Publication number: 20130146758
    Abstract: A sample support plate (100) for a variety of possible applications, including MALDI mass spectrometry, is disclosed. A plurality of spatially separated sample recipient sites (101) are arranged on the surface of a substrate. The recipient sites are mutually separated by areas having a different wettability than the recipient sites. They are arranged in a plurality of rows consisting of a plurality of recipient sites whose centers are regularly spaced along a first direction with a predetermined periodicity (D1), the rows being regularly spaced along a second direction perpendicular to the first direction with a predetermined centerline distance (D2). Each recipient site has a maximum lateral dimension that is preferably smaller than the diameter of a beam spot (104) of a desorption laser beam (103).
    Type: Application
    Filed: May 20, 2011
    Publication date: June 13, 2013
    Applicants: EMPA EIDG. MATERIALPRUFUNGS-UND FORSCHUNGSANSTALT, EIDGENOSSISCHE TECHNISCHE HOCHSCHULE ZURICH
    Inventors: Pawel Urban, Renato Zenobi, Konstantins Jefimovs, Andrea Amantonico, Stephan Fagerer, Nils Goedecke