Abstract: Semiconductor multi-die structures having intermediate vertical side chips, and packages housing such semiconductor multi-die structures, are described. In an example, a multi-die semiconductor structure includes a first main stacked dies (MSD) structure having a first substantially horizontal arrangement of semiconductor dies. A second MSD structure having a second substantially horizontal arrangement of semiconductor dies is also included. An intermediate vertical side chip (i-VSC) is disposed between and electrically coupled to the first and second MSD structures.

Abstract: Embodiments of wearable electronic devices, components thereof, and related systems and techniques are disclosed herein. For example, a wearable electronic device may include a wearable support structure having a first surface and a second surface; a first electrode located at the first surface, wherein, when the wearable electronic device is worn by a user on a portion of the user's body, the first electrode is arranged to contact the user's skin in the portion of the user's body; a second electrode located at the second surface, wherein, when the wearable electronic device is worn by a user on the portion of the user's body, the second electrode is arranged to not contact the user's skin in the portion of the user's body; and a resistance switch having first and second input terminals coupled to the first and second electrodes, respectively. Other embodiments may be disclosed and/or claimed.

Abstract: In one example an electronic device comprises a housing. A receptacle in the housing comprising an opening at a distal end to receive a plug and an electrostatic conductor assembly positioned proximate the opening in the receptacle, wherein the electrostatic conductor assembly is coupled to a dedicated electrical discharge path. Other examples may be described.

Abstract: Some example forms relate to an electrical interconnect for an electronic package. The electrical interconnect includes a dielectric layer that includes a trench formed into one surface of the dielectric layer and a signal conductor that fills the trench and extends above the one surface of dielectric layer. The electrical interconnect further includes a conductive reference layer mounted on an opposing side of the dielectric layer. The conductive reference layer is electromagnetically coupled to the signal conductor when current passes through the signal conductor.

Abstract: Semiconductor multi-die structures having intermediate vertical side chips, and packages housing such semiconductor multi-die structures, are described. In an example, a multi-die semiconductor structure includes a first main stacked dies (MSD) structure having a first substantially horizontal arrangement of semiconductor dies. A second MSD structure having a second substantially horizontal arrangement of semiconductor dies is also included. An intermediate vertical side chip (i-VSC) is disposed between and electrically coupled to the first and second MSD structures.

Abstract: Semiconductor multi-die structures having intermediate vertical side chips, and packages housing such semiconductor multi-die structures, are described. In an example, a multi-die semiconductor structure includes a first main stacked dies (MSD) structure having a first substantially horizontal arrangement of semiconductor dies. A second MSD structure having a second substantially horizontal arrangement of semiconductor dies is also included. An intermediate vertical side chip (i-VSC) is disposed between and electrically coupled to the first and second MSD structures.

Abstract: An apparatus includes a coreless mounting substrate and an interposer disposed on the coreless mounting substrate with a chip disposed in a recess in the interposer and upon the coreless substrate. The apparatus may include an inter-package solder bump in contact with an interconnect channel in the interposer, and a top chip package including a top package substrate and a top die disposed on the top package substrate. The top package substrate is in contact with the inter-package solder bump.

Abstract: An apparatus includes a coreless mounting substrate and an interposer disposed on the coreless mounting substrate with a chip disposed in a recess in the interposer and upon the coreless substrate. The apparatus may include an inter-package solder bump in contact with an interconnect channel in the interposer, and a top chip package including a top package substrate and a top die disposed on the top package substrate. The top package substrate is in contact with the inter-package solder bump.

Abstract: The formation of electronic assemblies is described. One embodiment includes first and second semiconductor die structures each including a front side and a backside, the front side including an active region and the backside including metal regions and non-metal regions thereon. The first and second semiconductor die structures include a plurality of vias, the vias forming electrical connections between the active region and the backside metal regions. The first and second semiconductor die structures are stacked together with at least one of the metal regions on the backside of the first semiconductor die structure in direct contact with at least one of the metal regions on the back side of the second semiconductor die structure. Other embodiments are described and claimed.

Abstract: The formation of electronic assemblies is described. One embodiment includes first and second semiconductor die structures each including a front side and a backside, the front side including an active region and the backside including metal regions and non-metal regions thereon. The first and second semiconductor die structures include a plurality of vias, the vias forming electrical connections between the active region and the backside metal regions. The first and second semiconductor die structures are stacked together with at least one of the metal regions on the backside of the first semiconductor die structure in direct contact with at least one of the metal regions on the back side of the second semiconductor die structure. Other embodiments are described and claimed.

Abstract: An apparatus including a die including a device side; and a build-up carrier including a body including a plurality of alternating layers of conductive material and dielectric material disposed on the device side of the die, an ultimate conductive layer patterned into a plurality of pads or lands; and a grid array including a plurality of conductive posts disposed on respective ones of the plurality of pads of the ultimate conductive layer of the body, at least one of the posts coupled to at least one of the contact points of the die through at least a portion of the conductive material of the body. A method including forming a body of a build-up carrier including a die, the body of the build-up carrier including an ultimate conductive layer and forming a grid array including a plurality of conductive posts on the ultimate conductive layer of the body.

Abstract: Semiconductor multi-die structures having intermediate vertical side chips, and packages housing such semiconductor multi-die structures, are described. In an example, a multi-die semiconductor structure includes a first main stacked dies (MSD) structure having a first substantially horizontal arrangement of semiconductor dies. A second MSD structure having a second substantially horizontal arrangement of semiconductor dies is also included. An intermediate vertical side chip (i-VSC) is disposed between and electrically coupled to the first and second MSD structures.

Abstract: A microelectronic device comprises a first surface (110, 710), a second surface (120, 720), and a passageway (130, 730) extending from the first surface to the second surface. The passageway contains a plurality of electrically conductive channels (131, 132, 231, 232) separated from each other by an electrically insulating material (133, 1133).

Abstract: Embodiments of an invention for verifying firmware using system memory error check logic are disclosed. In one embodiment, an apparatus includes an execution core, firmware, error check logic, non-volatile memory, comparison logic, and security logic. The error check logic is to generate, for each line of firmware, an error check value. The comparison logic is to compare stored error check values from the non-volatile memory with generated error check values from the error check logic. The security logic is to prevent the execution core from executing the firmware if the comparison logic detects a mismatch between the stored error code values and the generated error code values.

Abstract: Methods and apparatus to provide die backside connections are described. In one embodiment, the backside of a die is metallized and coupled to another die or a substrate. Other embodiments are also described.

Abstract: Methods and apparatus to provide die backside metallization and/or surface activated bonding for stacked die packages are described. In one embodiment, an active metal layer of a first die may be coupled to an active metal layer of a second die through silicon vias and/or a die backside metallization layer of the second die. Other embodiments are also described.

Abstract: The formation of electronic assemblies is described. One embodiment includes first and second semiconductor die structures each including a front side and a backside, the front side including an active region and the backside including metal regions and non-metal regions thereon. The first and second semiconductor die structures include a plurality of vias, the vias forming electrical connections between the active region and the backside metal regions. The first and second semiconductor die structures are stacked together with at least one of the metal regions on the backside of the first semiconductor die structure in direct contact with at least one of the metal regions on the back side of the second semiconductor die structure. Other embodiments are described and claimed.

Abstract: The formation of electronic assemblies is described. One embodiment includes first and second semiconductor die structures each including a front side and a backside, the front side including an active region and the backside including metal regions and non-metal regions thereon. The first and second semiconductor die structures include a plurality of vias, the vias forming electrical connections between the active region and the backside metal regions. The first and second semiconductor die structures are stacked together with at least one of the metal regions on the backside of the first semiconductor die structure in direct contact with at least one of the metal regions on the back side of the second semiconductor die structure. Other embodiments are described and claimed.

Abstract: An apparatus includes a coreless mounting substrate and an interposer disposed on the coreless mounting substrate with a chip disposed in a recess in the interposer and upon the coreless substrate. The apparatus may include an inter-package solder bump in contact with an interconnect channel in the interposer, and a top chip package including a top package substrate and a top die disposed on the top package substrate. The top package substrate is in contact with the inter-package solder bump.

Abstract: Bandwidth is allocated among network interfaces of, for example, a switch, router, or server among based on network packet traffic. In one example the network device has a plurality of network interfaces, a performance monitoring unit to monitor buffer events for the network interfaces and to generate an interrupt if a network interface buffer is near an overflow state, and a processor to receive the interrupt and increase a priority of the associated network interface in response thereto.