Abstract: The present disclosure relates to a superconductor including magnesium diboride and a production method therefor. A superconductor having a high critical current density at a certain temperature and under a certain magnetic field may be obtained by doping magnesium diboride with liquid chloroform during the production of the superconductor.

Abstract: According to an exemplary embodiment of the present invention, provided is a method for manufacturing a superconductor including magnesium diboride, the method including: a first mixture preparation step of preparing a first mixture including a boron powder and a liquid chlorinated hydrocarbon compound; a second mixture preparation step of preparing a second mixture including the first mixture and a magnesium powder; a molded body manufacturing step of manufacturing a molded body by pressurizing the second mixture; and a sintering step of sintering the molded body to manufacture a superconductor including magnesium diboride.

Abstract: According to an exemplary embodiment of the present invention, provided is a method for manufacturing a superconductor including magnesium diboride, the method including: a first mixture preparation step of preparing a first mixture including a boron powder and a liquid chlorinated hydrocarbon compound; a second mixture preparation step of preparing a second mixture including the first mixture and a magnesium powder; a molded body manufacturing step of manufacturing a molded body by pressurizing the second mixture; and a sintering step of sintering the molded body to manufacture a superconductor including magnesium diboride.

Abstract: The present disclosure relates to a superconductor including magnesium diboride and a production method therefor. A superconductor having a high critical current density at a certain temperature and under a certain magnetic field may be obtained by doping magnesium diboride with liquid chloroform during the production of the superconductor.

Abstract: Disclosed herein is a method of preparing a MgB2 superconducting wire and the MgB2 superconducting wire prepared thereby. The method comprising rolling a raw powder by using a powder rolling method. According to the method of the present invention has an effect of increasing an effective area where superconducting current can flow by improvement of the connectivity of a MgB2 superconducting powder and achievement of high density through a powder rolling process, and maintaining an uniform current value even in a large length because of the improvement of the connectivity.

Abstract: Disclosed herein is a method of preparing a MgB2 superconducting wire and the MgB2 superconducting wire prepared thereby. The method comprising rolling a raw powder by using a powder rolling method. According to the method of the present invention has an effect of increasing an effective area where superconducting current can flow by improvement of the connectivity of a MgB2 superconducting powder and achievement of high density through a powder rolling process, and maintaining an uniform current value even in a large length because of the improvement of the connectivity.

Abstract: Disclosed herein is a precursor solution for forming a biaxially oriented buffer layer through low-temperature heat treatment, by which a highly oriented buffer layer can be formed even when the precursor solution is heat-treated at a low temperature of 1000° C. or lower at the time of forming a buffer layer through a wet chemical method. The precursor solution is prepared by adding a carboxylate or an alkoxide of bismuth, boron, lead, gallium, or the like, which is a metal salt for forming an oxide having a low melting point of 1200° C. or lower after pyrolysis in an oxygen atmosphere, to a precursor solution for forming a buffer layer through a wet chemical method.

Abstract: Disclosed herein is a precursor solution for forming a biaxially oriented buffer layer through low-temperature heat treatment, by which a highly oriented buffer layer can be formed even when the precursor solution is heat-treated at a low temperature of 1000° C. or lower at the time of forming a buffer layer through a wet chemical method. The precursor solution is prepared by adding a carboxylate or an alkoxide of bismuth, boron, lead, gallium, or the like, which is a metal salt for forming an oxide having a low melting point of 1200° C. or lower after pyrolysis in an oxygen atmosphere, to a precursor solution for forming a buffer layer through a wet chemical method.

Abstract: The present invention is provided to manufacture a low magnetic loss metal tape with biaxial texture and a manufacturing method thereof. The low magnetic loss metal tape has a non-magnetic metal layer deposited on a nickel layer in the form of stack. The low magnetic loss metal tape with biaxial texture is manufactured by the following steps. A biaxially textured nickel layer is formed on a surface of cathode rotating in an electroplating bath including a cathode with single crystalline structure or similarly high orientation, and an anode made of high purity nickel. The nickel layer formed on the cathode is then washed in a water bath. Subsequently, a non-magnetic metal layer is formed on the washed nickel layer rotating in a plating bath with a non-magnetic metal solution. The metal tape is finally manufactured by delaminating and winding the nickel/non-magnetic metal layers.

Abstract: Disclosed herein is a technique for manufacturing a superconducting tape grown epitaxially by a replication process. According to the technique, a long superconducting tape can be manufactured using a loop-shaped base. Further disclosed is a method for manufacturing a metal oxide device which comprises the steps of forming a solvent-soluble separation layer on a base having a single crystal or textured surface, forming a superconducting layer on the separation layer, forming a support layer on the superconducting layer, and removing the separation layer by dissolution in a solvent. According to the method, it is possible to manufacture a superconducting tape consisting of the superconducting layer and the support layer separated from the bath, and having the same crystallinity as that of the base (replication).

Abstract: The present invention is provided to manufacture a low magnetic loss metal tape with biaxial texture and a manufacturing method thereof. The low magnetic loss metal tape has a non-magnetic metal layer deposited on a nickel layer in the form of stack. The low magnetic loss metal tape with biaxial texture is manufactured by the following steps. A biaxially textured nickel layer is formed on a surface of cathode rotating in an electroplating bath including a cathode with single crystalline structure or similary high orientation, and an anode made of high purity nickel. The nickel layer formed on the cathode is then washed in a water bath. Subsequently, a non-magnetic metal layer is formed on the washed nickel layer rotating in a plating bath with a non-magnetic metal solution. The metal tape is finally manufactured by delaminating and winding the nickel/non-magnetic metal layers.

Abstract: Disclosed herein is a technique for manufacturing a superconducting tape grown epitaxially by a replication process. According to the technique, a long superconducting tape can be manufactured using a loop-shaped base. Further disclosed is a method for manufacturing a metal oxide device which comprises the steps of forming a solvent-soluble separation layer on a base having a single crystal or textured surface, forming a superconducting layer on the separation layer, forming a support layer on the superconducting layer, and removing the separation layer by dissolution in a solvent. According to the method, it is possible to manufacture a superconducting tape consisting of the superconducting layer and the support layer separated from the bath, and having the same crystallinity as that of the base (replication).

Abstract: Disclosed herein is a reactive sputtering deposition apparatus in which a partition plate is provided between a sputtering target and a substrate. The reactive sputtering deposition apparatus comprises a deposition chamber for creating an inner process atmosphere of the apparatus, a target including a metal material to be deposited, a substrate on which a reaction product of the metal material separated from the target with a reactive gas is deposited, and a partition plate dividing the deposition chamber into a reaction chamber at the side of the substrate and a sputtering chamber at the side of the target and provided between the target and the substrate, wherein an opening is formed through a central portion of the partition plate to allow the metal material separated from the target to reach the substrate.