Abstract: An analog buffer, display device having the same and a method of drving the same are provided. The analog buffer applies an analog voltage to a load. The analog buffer includes a comparator and a transistor. The comparator is configured to compare an input voltage provided from an external device with the analog voltage applied to the load. The transistor is turned on to electrically charge the load when the analog voltage is lower than the input voltage or turned on to electrically discharge the load when the analog voltage is higher than the input voltage, and turned off when the analog voltage becomes substantially the same as the input voltage.

Abstract: An amplifier includes a biasing section, first and second differential amplifying sections and an output section. The biasing section outputs first and second bias currents based on first and second power source voltages. The first differential amplifying section outputs a first amplified voltage based on the first bias current. The second differential amplifying section outputs a second amplified voltage based on the second bias current. The output section outputs the second power source voltage based on the first amplified voltage and the first power source voltage, and outputs the first power source voltage based on the second amplified voltage and the second power source voltage. Therefore, a variation of the threshold voltage is compensated to enhance display quality.

Abstract: Disclosed are a transreflective type LCD, a method of manufacturing the same and a method of thin film transistor thereof. A TFT and a pixel electrode connected with a drain electrode of the TFT are formed on a TFT substrate. The pixel electrode includes a reflective electrode for reflecting a first light from an external and a transmissive electrode for transmitting a second light generated in the transreflective type LCD. The reflective electrode is formed to have a size no more than a size of an area in which the reflective electrode is not overlapped with the transmissive electrode. Thus, visual differences between the reflective and the transmissive modes are reduced. Also, the reflective electrode for reflecting the first light is formed with the TFT through one process, thereby reducing the number of manufacturing processes of the transreflective type LCD and the thickness thereof.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.

Abstract: Disclosed are a transreflective type LCD, a method of manufacturing the same and a method of thin film transistor thereof. A TFT and a pixel electrode connected with a drain electrode of the TFT are formed on a TFT substrate. The pixel electrode includes a reflective electrode for reflecting a first light from an external and a transmissive electrode for transmitting a second light generated in the transreflective type LCD. The reflective electrode is formed to have a size no more than a size of an area in which the reflective electrode is not overlapped with the transmissive electrode. Thus, visual differences between the reflective and the transmissive modes are reduced. Also, the reflective electrode for reflecting the first light is formed with the TFT through one process, thereby reducing the number of manufacturing processes of the transreflective type LCD and the thickness thereof.

Abstract: A method of fabricating poly crystalline silicon type thin film transistor is disclosed. In the method, before the step of re-crystallization of amorphous silicon to form polycrystalline silicon active pattern, a step for injecting predetermined amount of oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal defect in the interface between the gate insulating layer and poly crystalline silicon layer can be cured and the mobility of charge carrier can be improved in the channel of the thin film transistor.