Abstract: There is provided a facilitated transport membrane for separating alkene hydrocarbon comprising a solid polymer electrolyte layer consisting a transition metal salt, a polymer, an ionic liquid, and a porous supported membrane. The facilitated transport membrane of the present invention shows high selectivity and permeability for the alkene hydrocarbon. It further maintains the complex's activity as a carrier during a long operation, wherein the complex is formed by an interaction of the transition metal ion with the polymer ligand within the solid polymer electrolyte.

Abstract: The present invention provides a process for fabricating ultrathin monolayers or ultrathin multilayer films, the process comprising the steps of: introducing positive or negative charge or a material capable of hydrogen-bonding to a substrate and placing the substrate on a spinner(pretreating step); introducing a material (A) bindable with the material deposited on the substrate, and spinning the substrate at 500 rpm to 30000 rpm for 4 to 200 seconds(first coating step); dropping washing solvent onto the substrate after completion of the first coating and spinning the substrate at 500 rpm to 30000 rpm for 4 to 200 sec to remove weakly-bound material (A) and form a thin film (A)(first washing step); introducing another material (B) bindable with the material (A) coated on the substrate and further coating it in the same condition as of the first coating(second coating step), dropping washing solvent onto the substrate after completion of the second coating and spinning the substrate at 500 rpm to 30000 rpm for

Abstract: The present invention relates to polymethylsilsesquioxane copolymers, and methods for preparing the copolymers and low-dielectric PMSSQ coating films. Polymethylsilsesquioxane copolymer of the present invention is synthesized by a copolymerization reaction using a methyltrialkokxysilane [A: CH3Si(OR)3] and &agr;,&ohgr;-bistrialkokxysilane compound [B: (RO)3Si—X—Y—Si(OR)3, wherein X and Y are identical or different hydrocarbon groups and are linked to each other by carbon] as a copolymerization monomer, and it contains Si—OH terminal group more than 10% in content, and has molecular weight ranging from 5,000 to 30,000. The coating film prepared from the low dielectric PMSSQ according to the present invention meets the two inevitable requirements for next generation semiconductor industry, i.e., mechanical strength (hardness 1.9 Gpa, Modulus 12 Gpa) and low dielectric property (<2.3).

Abstract: The present invention provides a process for fabricating ultrathin monolayers or ultrathin multilayer films, the process comprising the steps of: introducing positive or negative charge or a material capable of hydrogen-bonding to a substrate and placing the substrate on a spinner(pretreating step); introducing a material (A) bindable with the material deposited on the substrate, and spinning the substrate at 500 rpm to 30000 rpm for 4 to 200 seconds(first coating step); dropping washing solvent onto the substrate after completion of the first coating and spinning the substrate at 500 rpm to 30000 rpm for 4 to 200 sec to remove weakly-bound material (A) and form a thin film (A)(first washing step); introducing another material (B) bindable with the material (A) coated on the substrate and further coating it in the same condition as of the first coating(second coating step), dropping washing solvent onto the substrate after completion of the second coating and spinning the substrate at 500 rpm to 30000 rpm for