Abstract: A photopolymerizable resin composition for sandblast resist includes as a photopolymerizable oligomer, a polyalkylene glycol mono(meth)acrylate compound having a terminal alkyl group, a compound selected from polyalkylene glycol di(meth)acrylate compounds, and further a compound selected from urethane compounds having a terminal (meth)acrylate group as derived from a polyether or polyester compound having a terminal hydroxyl group, a diisocyanate compound and a (meth)acrylate compound having a hydroxyl group. The resist containing the photopolymerizable resin composition exhibits much improved reactivity relative to the resist using a urethane compound having a terminal (meth)acrylate group alone or in combination with an unsaturated (meth)acrylate compound, which has been conventionally used for dry films.

Abstract: Disclosed is a manufacturing method of a circuit of a printed circuit board using a dry film resist in forming a circuit pattern on a copper overlaid laminate as a normal printed circuit board, in which a modification of the manufacturing process can enhance the resolution and fine weldability of the resist to realize a fine structure of the circuit pattern. The method includes: laminating the dry film resist on the top surface of the printed circuit board; exposing the dry film resist to ultraviolet (UV) radiations using a photomask in which a desired circuit pattern is formed; annealing the resulting material of the previous step with infrared (IR) radiations; and removing unexposed areas of the resist by development.

Abstract: Disclosed is a manufacturing method of a circuit of a printed circuit board using a dry film resist in forming a circuit pattern on a copper overlaid laminate as a normal printed circuit board, in which a modification of the manufacturing process can enhance the resolution and fine weldability of the resist to realize a fine structure of the circuit pattern. The method includes: laminating the dry film resist on the top surface of the printed circuit board; exposing the dry film resist to ultraviolet (UV) radiations using a photomask in which a desired circuit pattern is formed; annealing the resulting material of the previous step with infrared (IR) radiations; and removing unexposed areas of the resist by development.