Patents by Inventor Kook-Joo Kim

Kook-Joo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10825674
    Abstract: An apparatus for mass spectrometry includes a plate on which a semiconductor wafer including an organic matter is disposed. A hybrid provider provides a ZnO-graphene hybrid to a predetermined region on the semiconductor wafer. A mass analyzer detects the organic matter in the predetermined region using laser desorption/ionization mass spectrometry (LDI-MS).
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: November 3, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Kook Joo Kim, KiJu Um, Cheol Sang Yoon, KangTaek Lee
  • Publication number: 20200176186
    Abstract: A capacitor component includes a body including a dielectric layer, and a first internal electrode and a second internal electrode disposed to oppose each other in a first direction with the dielectric layer interposed therebetween; a first external electrode and a second external electrode disposed on the body, and respectively connected to the first internal electrode; and a third external electrode and a fourth external electrode disposed on the body, and respectively connected to the second internal electrode, wherein the first and second external electrodes include a connection metal layer, a ceramic layer, a metal layer, and a plated layer, respectively, sequentially disposed on the body, wherein the plated layer is extended and disposed to contact end surfaces of the connection metal layer, the ceramic layer, and the metal layer in the first direction, respectively.
    Type: Application
    Filed: September 10, 2019
    Publication date: June 4, 2020
    Inventors: Kook Joo MOON, Mi Young KIM, Doo Yeon HWANG, Jin Kyung JOO, Ho Jun LEE, Gam Woo KIM, Chang Su KIM
  • Publication number: 20190279856
    Abstract: An apparatus for mass spectrometry includes a plate on which a semiconductor wafer including an organic matter is disposed. A hybrid provider provides a ZnO-graphene hybrid to a predetermined region on the semiconductor wafer. A mass analyzer detects the organic matter in the predetermined region using laser desorption/ionization mass spectrometry (LDI-MS).
    Type: Application
    Filed: February 28, 2019
    Publication date: September 12, 2019
    Inventors: KOOK JOO KIM, KiJu Um, Cheol Sang Yoon, KangTaek Lee
  • Patent number: 8455359
    Abstract: In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.
    Type: Grant
    Filed: November 4, 2011
    Date of Patent: June 4, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kook-Joo Kim, Jin-Ho Kim, Seung-Ki Chae, Pil-Kwon Jun, Sun-Hee Park, Gyoung-Eun Byun
  • Publication number: 20120196439
    Abstract: In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.
    Type: Application
    Filed: November 4, 2011
    Publication date: August 2, 2012
    Inventors: Kook-Joo KIM, Jin-Ho Kim, Seung-Ki Chae, Pil-Kwon Jun, Sun-Hee Park, Gyoung-Eun Byun
  • Publication number: 20110073801
    Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
    Type: Application
    Filed: November 30, 2010
    Publication date: March 31, 2011
    Inventors: Dong-Won Hwang, Kook-Joo Kim, Jung-In LA, Pil-Kwon Jun, Seung-Ki Chae, Yang-Koo Lee
  • Patent number: 7879736
    Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: February 1, 2011
    Assignees: Samsung Electronics Co., Ltd., Cheil Industries, Inc.
    Inventors: Dong-Won Hwang, Kook-Joo Kim, Jung-In La, Pil-Kwon Jun, Seung-Ki Chae, Yang-Koo Lee
  • Publication number: 20090130842
    Abstract: A contact hole forming method and a method of manufacturing semiconductor device using the same may include forming a layer on a substrate; anisotropically etching the layer to form a dummy contact hole exposing the substrate; isotropically etching a sidewall of the dummy contact hole to form a contact hole by alternatively and repeatedly supplying an etching solution including a fluoride salt in a low-polarity organic solvent and deionized water to the dummy contact hole. The methods increase reliability of semiconductor memory devices.
    Type: Application
    Filed: October 17, 2008
    Publication date: May 21, 2009
    Inventors: Dong-Won Hwang, Kook-Joo Kim, Yang-koo Lee, Hun-Jung Yi
  • Publication number: 20080121622
    Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
    Type: Application
    Filed: June 29, 2007
    Publication date: May 29, 2008
    Applicants: SAMSUNG ELECTRONICS CO., LTD., CHEIL INDUSTRIES, INC.
    Inventors: Dong-Won HWANG, Kook-Joo KIM, Jung-In LA, Pil-Kwon JUN, Seung-Ki CHAE, Yang-Koo LEE
  • Publication number: 20070000523
    Abstract: A cleaning composition is disclosed. The cleaning composition comprises about 80 to 99.8999 percent by weight of an ammonium fluoride aqueous solution, about 0.1 to 5 percent by weight of a buffering agent, and about 0.0001 to 15 percent by weight of a corrosion-inhibiting agent. A method of preparing the cleaning composition, a method of cleaning a substrate using the cleaning composition, and a method of manufacturing a semiconductor device using the cleaning composition are also disclosed.
    Type: Application
    Filed: June 19, 2006
    Publication date: January 4, 2007
    Inventors: Se-Yeon Kim, Pil-Kwon Jun, Jung-Dae Park, Myoung-Ok Han, Jea-Wook Kim, Seung-Ki Chae, Kook-Joo Kim, Jae-Seok Lee, Yong-Kyun Ko, Kwang-Shin Lim, Yang-Koo Lee