Patents by Inventor Kook-rin Char

Kook-rin Char has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070292316
    Abstract: In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.
    Type: Application
    Filed: August 21, 2007
    Publication date: December 20, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-wan Kim, Kook-rin Char, Dae-sik Kim
  • Patent number: 7262474
    Abstract: In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: August 28, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-wan Kim, Kook-rin Char, Dae-sik Kim
  • Publication number: 20050185457
    Abstract: In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.
    Type: Application
    Filed: January 31, 2005
    Publication date: August 25, 2005
    Inventors: Tae-wan Kim, Kook-rin Char, Dae-sik Kim