Patents by Inventor Kook-rin Char

Kook-rin Char has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TWO-DIMENSIONAL ELECTRON GAS AT INTERFACE BETWEEN BASNO3 AND LAINO3
    Publication number: 20230045518
    Abstract: Provided is an electronic device using an interface between BaSnO3 and LaInO3, the electronic device including: a substrate formed of a metal oxide of non-SrTiO3 material a first buffer layer disposed on the substrate and formed of a BaSnO3 material; a BLSO layer disposed on at least a portion of the first buffer layer and formed of a (Ba1-x, Lax)SnO3 material, wherein x has a value equal to or greater than 0 and less than or equal to 1; an LIO layer at least partially disposed on at least a portion of the BLSO layer so as to form an interface between the LIO layer and the BLSO layer, and formed of an LaInO3 material; and a first electrode layer at least partially in contact with the interface between the BLSO layer and the LIO layer, and formed of at least two or more separated portions.
    Type: Application
    Filed: September 11, 2019
    Publication date: February 9, 2023
    Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Kook Rin CHAR, Young Mo KIM, You Jung KIM
  • Reaction chamber for oxy-fluoridation
    Publication number: 20070292316
    Abstract: In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.
    Type: Application
    Filed: August 21, 2007
    Publication date: December 20, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae-wan Kim, Kook-rin Char, Dae-sik Kim
  • Magnetic memory device and method of manufacturing the same
    Patent number: 7262474
    Abstract: In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: August 28, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-wan Kim, Kook-rin Char, Dae-sik Kim
  • Magnetic memory device and method of manufacturing the same
    Publication number: 20050185457
    Abstract: In a magnetic memory device, and a method of manufacturing the same, the magnetic memory device includes a switching device, and a magnetic tunneling junction (MTJ) cell connected to the switching device, the MTJ cell including a lower electrode connected to the switching device and a lower magnetic layer, a tunneling film containing fluorine, an upper magnetic layer, and a capping layer, sequentially stacked on the lower electrode.
    Type: Application
    Filed: January 31, 2005
    Publication date: August 25, 2005
    Inventors: Tae-wan Kim, Kook-rin Char, Dae-sik Kim