Abstract: The water-soluble resin composition for forming fine patterns comprises a water-soluble polymer represented by Chemical Formula 1 and a first water-soluble solvent. The composition is coated and heated on a photoresist layer having contact holes to reduce a size of the contact holes.

Abstract: Disclosed is a method for preparing a carbon nanomaterial/polymer composite. More particularly, it relates to an improved method for preparing a carbon nanomaterial/polymer composite capable of solving a dust problem of a carbon nanomaterial powder and a layer separation problem due to large density difference between the carbon nanomaterial powder and a polymer pellet and providing superior physical properties of the composite, whereby an additive used to prepare the carbon nanomaterial/polymer composite is mixed with the carbon nanomaterial powder and prepared into a pellet, which is then mixed with the polymer pellet.

Abstract: The present invention relates to a complex oxide catalyst of Bi/Mo/Fe and an oxidative dehydrogenation of 1-butene in the presence of a catalyst herein. A catalyst of the present invention is superior to the conventional Bi/Mo catalyst in thermal and mechanical stabilities, conversion and selectivity toward 1,3-butadiene, while showing a long-term catalytic activity.

Abstract: Disclosed are a hydrophilic photoacid generator prepared by copolymerization of a first (meth)acrylic acid ester having a structure represented by the following Formula 1 or 2, with a polymerizable monomer selected from the group consisting of a second (meth)acrylic acid ester, an olefin-based compound and a mixture thereof, each of which contains a functional group selected from the group consisting of a hydroxyl group, a carboxyl group, a lactone group, a nitrile group and a halogen group: wherein respective substituents are defined in the specification, and a resist composition comprising the same. The hydrophilic photoacid generator is uniformly dispersed in a resist film, thus improving a line edge roughness of resist patterns.

Abstract: A resist additive represented by Formula 1 below and a resist composition including the additive are disclosed. The resist additive improves hydrophobicity of the surface of the resist film to prevent materials from being leached in water during exposure of immersion lithography and is converted to have hydrophilicity by deprotection reaction during development. As a result, a micropattern of a resist film with excellent sensitivity and high resolution is formed. In Formula 1, the substituents are defined as described in the specification.

Abstract: Disclosed is an organic antireflective film composition which includes a monomer containing two or more thiol groups and a monomer containing two or more vinyl groups, as crosslinking agents. When the organic antireflective film composition is used, an antireflective film formed from the composition can be rapidly etched in an ultrafine pattern forming process, and the curing rate can be increased, while the etching rate is increased, without using an acid generator and a curing agent or by using the agents only in small amounts.

Abstract: Provided are an additive for resist represented by the following formula (1), and a resist composition containing the additive. The additive according to the present invention can suppress leaching caused by water during an immersion lithographic process by increasing hydrophobicity of the surface of the resist film in the exposure at the time of applying the additive to a resist composition, and can form a fine resist pattern having excellent sensitivity and resolution at the time of applying the additive to a resist composition. wherein the substituents respectively have the same meanings as defined above.

Abstract: Disclosed are an acrylic monomer having a structure represented by formula (1), a polymer containing a repeating unit derived from the acrylic monomer, and a resist composition prepared by using the polymer, which exhibits excellent adhesiveness, storage stability, and enhanced line width roughness, exhibits excellent resolution in both C/H patterns and L/S patterns, has an excellent process window so that an excellent pattern profile can be obtained regardless of the type of the substrate, and exhibits improved contrast.