Patents by Inventor Korekazu Ueyama

Korekazu Ueyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7385276
    Abstract: The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure having a pore ratio of 50% or higher.
    Type: Grant
    Filed: April 7, 2006
    Date of Patent: June 10, 2008
    Assignee: Rohm Co., Ltd.
    Inventors: Yoshiaki Oku, Norikazu Nishiyama, Korekazu Ueyama
  • Publication number: 20070164437
    Abstract: There is included an inorganic insulating film having a porous structure including a cylindrical vacancy oriented in parallel with the surface of a substrate subjected to a hydrophilic treatment or a hydrophobic treatment.
    Type: Application
    Filed: February 6, 2007
    Publication date: July 19, 2007
    Applicant: Rohm Co., Ltd.
    Inventors: Norikazu Nishiyama, Korekazu Ueyama, Yoshiaki Oku
  • Patent number: 7220684
    Abstract: There is included an inorganic insulating film having a porous structure including a cylindrical vacancy oriented in parallel with the surface of a substrate subjected to a hydrophilic treatment or a hydrophobic treatment.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: May 22, 2007
    Assignee: ROHM Co., Ltd.
    Inventors: Norikazu Nishiyama, Korekazu Ueyama, Yoshiaki Oku
  • Patent number: 7166545
    Abstract: The invention aims at providing a dielectric film having a low dielectric constant and enhanced mechanical strength. A surfactant and an silica derivative are dissolved into a solvent at a desired mole ratio. The precursor solution is applied over the substrate, and the substrate is exposed to a silica derivative atmosphere before being sintered, thereby supplying a silica derivative. Thus, contraction of the film stemming from hydrolysis is inhibited, and a sturdy mesoporous silica thin film which takes the self-assembly of the surfactant as a mold is obtained while cavities are maintained intact without being fractured. Thus, there is formed an inorganic dielectric film which is formed on the surface of the substrate and has a cyclic porous structure including layered or columnar pores oriented so as to become parallel with the surface of the substrate.
    Type: Grant
    Filed: September 17, 2002
    Date of Patent: January 23, 2007
    Assignee: Rohm Co., Ltd.
    Inventors: Norikazu Nishiyama, Korekazu Ueyama, Yoshiaki Oku
  • Patent number: 7105459
    Abstract: It is an object to provide, with a high productivity, a dielectric thin film having a high degree of pore and a very great mechanical strength, and there are included a surfactant film forming step of forming a film including a surfactant on a surface of a substrate on which a thin film is to be formed, a vapor deposition step of causing the substrate to come in contact with a gas phase containing a silica derivative to form a thin film including the silica derivative, and a step of calcining the substrate having the thin film formed thereon and decomposing and removing the surfactant, the thin film being thus formed.
    Type: Grant
    Filed: March 3, 2003
    Date of Patent: September 12, 2006
    Assignee: Rohm Co., Ltd.
    Inventors: Norikazu Nishiyama, Yoshiaki Oku, Shunsuke Tanaka, Korekazu Ueyama
  • Publication number: 20060186559
    Abstract: The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure having a pore ratio of 50% or higher.
    Type: Application
    Filed: April 7, 2006
    Publication date: August 24, 2006
    Applicant: ROHM CO., LTD.
    Inventors: Yoshiaki Oku, Norikazu Nishiyama, Korekazu Ueyama
  • Patent number: 7075170
    Abstract: The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure having a pore ratio of 50% or higher.
    Type: Grant
    Filed: June 27, 2002
    Date of Patent: July 11, 2006
    Assignee: Rohm Co., Ltd.
    Inventors: Yoshiaki Oku, Norikazu Nishiyama, Korekazu Ueyama
  • Publication number: 20050232841
    Abstract: A mesoporous silica is provided, having uniform mesopores and a periodic structure, which contains Zr in the form of a Si—O—Zr bond. The Zr content in the Si—O—Zr bond, represented by [Zr/(Si+Zr)], is 0.05 to 20 mole %. The mesoporous silica is superior in alkaline resistance and is suitably used as a separation membrane (e.g. a ceramic membrane) and a catalytic support for a solid-liquid system, in which an alkaline liquid may be used.
    Type: Application
    Filed: June 15, 2005
    Publication date: October 20, 2005
    Applicants: NGK Insulators, Ltd., Korekazu Ueyama
    Inventors: Norikazu Nishiyama, Yasuyuki Egashira, Korekazu Ueyama
  • Patent number: 6949293
    Abstract: A mesoporous silica has uniform mesopores and a periodic structure, which contains a Zr element in the form of a Si—O—Zr bond and wherein the Zr content in the Si—O—Zr bond, represented by [Zr/(Si+Zr)] is 0.05 to 20 mole %. The mesoporous silica is superior in alkali resistance and is suitably used particularly as a separation membrane (e.g. a ceramic membrane) and a catalytic support for solid-liquid system, in which an alkaline liquid may be used.
    Type: Grant
    Filed: February 5, 2002
    Date of Patent: September 27, 2005
    Assignees: NGK Insulators, Ltd.
    Inventors: Norikazu Nishiyama, Yasuyuki Egashira, Korekazu Ueyama
  • Publication number: 20050106802
    Abstract: It is an object to provide, with a high productivity, a dielectric thin film having a high degree of pore and a very great mechanical strength, and there are included a surfactant film forming step of forming a film including a surfactant on a surface of a substrate on which a thin film is to be formed, a vapor deposition step of causing the substrate to come in contact with a gas phase containing a silica derivative to form a thin film including the silica derivative, and a step of calcining the substrate having the thin film formed thereon and decomposing and removing the surfactant, the thin film being thus formed.
    Type: Application
    Filed: March 3, 2003
    Publication date: May 19, 2005
    Inventors: Norikazu Nishiyama, Yoshiaki Oku, Shunsuke Tanaka, Korekazu Ueyama
  • Publication number: 20050003678
    Abstract: The invention aims at providing a dielectric film having a low dielectric constant and enhanced mechanical strength. A surfactant and an silica derivative are dissolved into a solvent at a desired mole ratio. The precursor solution is applied over the substrate, and the substrate is exposed to a silica derivative atmosphere before being sintered, thereby supplying a silica derivative. Thus, contraction of the film stemming from hydrolysis is inhibited, and a sturdy mesoporous silica thin film which takes the self-assembly of the surfactant as a mold is obtained while cavities are maintained intact without being fractured. Thus, there is formed an inorganic dielectric film which is formed on the surface of the substrate and has a cyclic porous structure including layered or columnar pores oriented so as to become parallel with the surface of the substrate.
    Type: Application
    Filed: September 17, 2002
    Publication date: January 6, 2005
    Inventors: Norikazu Nishiyama, Korekazu Ueyama, Yoshiaki Oku
  • Publication number: 20040235288
    Abstract: The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure having a pore ratio of 50% or higher.
    Type: Application
    Filed: December 29, 2003
    Publication date: November 25, 2004
    Inventors: Yoshiaki Oku, Norikazu Nishiyama, Korekazu Ueyama
  • Publication number: 20020155053
    Abstract: A mesoporous silica has uniform mesopores and a periodic structure, which contains a Zr element in the form of a Si—O—Zr bond and wherein the Zr content in the Si—O—Zr bond, represented by [Zr/(Si+Zr)] is 0.05 to 20 mole %. The mesoporous silica is superior in alkali resistance and is suitably used particularly as a separation membrane (e.g. a ceramic membrane) and a catalytic support for solid-liquid system, in which an alkaline liquid may be used.
    Type: Application
    Filed: February 5, 2002
    Publication date: October 24, 2002
    Applicant: NGK Insulators, Ltd.
    Inventors: Norikazu Nishiyama, Yasuyuki Egashira, Korekazu Ueyama