Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

Abstract: There are provided an apparatus and a method for providing a substrate, which can suppress any additional reaction between a developing solution and a photoresist (PR) film and prevent any PR remnants from being generated from such additional reaction. The method includes: supplying an organic developing solution onto a substrate while rotating the substrate at a first revolutions per minute (rpm); substituting the organic developing solution with a nonpolar rinse solution by supplying the nonpolar rinse solution onto the substrate while rotating the substrate at a second rpm, which is lower than the first rpm; continuing to supply the nonpolar rinse solution while rotating the substrate at a third rpm, which is higher than the second rpm; and continuing to supply the nonpolar rinse solution while rotating the substrate at a fourth rpm, which is between the second rpm and the third rpm.

Abstract: An apparatus and method for treating a substrate are provided. The apparatus includes at least one first process chamber configured to supply a developer onto the substrate; at least one second process chamber configured to treat the substrate using a supercritical fluid; a transfer chamber configured to transfer the substrate from the at least one first process chamber to the at least one second process chamber, while the developer supplied in the at least one first process chamber remains on the substrate; and a temperature and humidity control system configured to manage temperature and humidity of the transfer chamber by supplying a first gas of constant temperature and humidity into the transfer chamber.

Abstract: A substrate processing apparatus and a substrate processing method are provided, in which a flow rate of CO2 injected into a supercritical drying vessel is controlled through multi-level pressure control. The substrate processing method includes disposing a substrate coated with a chemical liquid in a process chamber, that includes a space in which the substrate is processed; drying the substrate by using a supercritical fluid; and taking the substrate out of the process chamber when the substrate is dried.

Abstract: The present disclosure relates to a flow resistance generating unit that generates a flow resistance in a pipe to solve a flow imbalance problem due to a bent pipe and stabilizes an internal airflow, and a substrate treating apparatus including the same. The substrate treating apparatus comprises a fluid supply unit for supplying fluid for treating a substrate and including an upper fluid supply module for supplying the fluid to an upper portion of the substrate, a lower fluid supply module for supplying the fluid to a lower portion of the substrate, and a supply pipe connected to at least one of the upper fluid supply module and the lower fluid supply module, and a flow resistance generating unit installed in the supply pipe and for generating a flow resistance with respect to the fluid passing through the supply pipe.

Abstract: The present invention relates to a method of preparing a hollow carbon structure. The method includes a step of calcining a solid component separated after a cracking reaction of a heavy hydrocarbon fraction; and a step of performing an acid treatment or base treatment on the solid component calcined in the above-described step. The present invention provides a method of preparing a hollow carbon structure which may be used to separate carbon dioxide, to remove a sulfur compound, and as a carrier of various substances by performing various pre-processes on carbon generated on a surface of a spent catalyst which is used in a cracking reaction of a heavy hydrocarbon fraction.

Abstract: The present invention relates to a method of preparing a hollow carbon structure. The method includes a step of calcining a solid component separated after a cracking reaction of a heavy hydrocarbon fraction; and a step of performing an acid treatment or base treatment on the solid component calcined in the above-described step. The present invention provides a method of preparing a hollow carbon structure which may be used to separate carbon dioxide, to remove a sulfur compound, and as a carrier of various substances by performing various pre-processes on carbon generated on a surface of a spent catalyst which is used in a cracking reaction of a heavy hydrocarbon fraction.