Patents by Inventor Kosa Hirota
Kosa Hirota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220375726Abstract: A plasma processing method which can realize a reduction of process variation in the first one of lot processing includes a first step of supplying gas to a processing chamber and a second step of etching the sample by using plasma after the first step. The gas is a gas containing a carbon element and a hydrogen element, a gas containing a chlorine element, or a mixed gas containing all of the gases used in the second step.Type: ApplicationFiled: February 10, 2020Publication date: November 24, 2022Inventors: Kosa Hirota, Masahiro Sumiya, Hirofumi Eitoku, Takanori Nakatsuka
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Publication number: 20220359166Abstract: A plasma processing apparatus including a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply; and a control device configured to control the power supply, in which the control device is configured to execute heat-retaining discharge under a first condition in which the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.Type: ApplicationFiled: February 3, 2020Publication date: November 10, 2022Inventors: Nanako Tamari, Kosa Hirota, Masahiro Sumiya, Masahiro Nagatani
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Patent number: 11424110Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.Type: GrantFiled: August 15, 2017Date of Patent: August 23, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Masahito Togami, Tatehito Usui, Kosa Hirota, Satomi Inoue, Shigeru Nakamoto
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Publication number: 20220262606Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.Type: ApplicationFiled: May 4, 2022Publication date: August 18, 2022Inventors: Kosa Hirota, Masahiro Sumiya, Koichi Nakaune, Nanako Tamari, Satomi Inoue, Shigeru Nakamoto
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Patent number: 11355324Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.Type: GrantFiled: March 19, 2018Date of Patent: June 7, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Kosa Hirota, Masahiro Sumiya, Koichi Nakaune, Nanako Tamari, Satomi Inoue, Shigeru Nakamoto
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Publication number: 20200294777Abstract: An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.Type: ApplicationFiled: March 19, 2018Publication date: September 17, 2020Inventors: Kosa HIROTA, Masahiro SUMIYA, Koichi NAKAUNE, Nanako TAMARI, Satomi INOUE, Shigeru NAKAMOTO
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Publication number: 20200273683Abstract: A plasma processing method includes an etching step of etching a wafer in a chamber, a plasma cleaning step of removing a particle on an inner wall of the chamber by introducing a gas containing a halogen element into the chamber by a plasma processing method for removing remaining halogen or the like in the chamber in a short time and improving throughput, and a remaining halogen removing step of removing the halogen element remaining in the chamber in the plasma cleaning step by alternately repeating an on state and an off state of the plasma containing oxygen in the chamber.Type: ApplicationFiled: February 27, 2019Publication date: August 27, 2020Inventors: Yuta TAKAGI, Kosa HIROTA, Yoshiharu INOUE, Masakazu MIYAJI
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Publication number: 20170372878Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.Type: ApplicationFiled: August 15, 2017Publication date: December 28, 2017Inventors: Masahito TOGAMI, Tatehito USUI, Kosa HIROTA, Satomi INOUE, Shigeru NAKAMOTO
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Publication number: 20170358504Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.Type: ApplicationFiled: August 9, 2017Publication date: December 14, 2017Inventors: Tatehito USUI, Kosa HIROTA, Satomi INOUE, Shigeru NAKAMOTO, Kousuke FUKUCHI
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Patent number: 9767997Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.Type: GrantFiled: July 16, 2014Date of Patent: September 19, 2017Assignee: Hitachi High-Technologies CorporationInventors: Masahito Togami, Tatehito Usui, Kosa Hirota, Satomi Inoue, Shigeru Nakamoto
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Patent number: 9741629Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.Type: GrantFiled: September 11, 2015Date of Patent: August 22, 2017Assignee: Hitachi High-Technologies CorporationInventors: Tatehito Usui, Kosa Hirota, Satomi Inoue, Shigeru Nakamoto, Kousuke Fukuchi
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Publication number: 20160284610Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and areal pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.Type: ApplicationFiled: September 11, 2015Publication date: September 29, 2016Inventors: Tatehito USUI, Kosa HIROTA, Satomi INOUE, Shigeru NAKAMOTO, Kousuke FUKUCHI
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Publication number: 20150021294Abstract: A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.Type: ApplicationFiled: July 16, 2014Publication date: January 22, 2015Inventors: Masahito Togami, Tatehito Usui, Kosa Hirota, Satomi Inoue, Shigeru Nakamoto