Patents by Inventor Kosei Ueda

Kosei Ueda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9793136
    Abstract: A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method includes a first process of supplying a processing gas containing oxygen and fluorocarbon into a plasma processing apparatus; and a second process of etching a silicon nitride layer 106a of a processing target object with a first mask 106 by exciting the processing gas into plasma. Further, the second process is performed in a state where an organic film ad generated from the processing gas is formed on an inner wall of an opening of the first mask 106 by gradually reducing a temperature of the processing target object from a first temperature T1 (80° C.) to a second temperature T2 (40° C.).
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: October 17, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kosei Ueda, Yoshinobu Hayakawa
  • Publication number: 20160172205
    Abstract: A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method includes a first process of supplying a processing gas containing oxygen and fluorocarbon into a plasma processing apparatus; and a second process of etching a silicon nitride layer 106a of a processing target object with a first mask 106 by exciting the processing gas into plasma. Further, the second process is performed in a state where an organic film ad generated from the processing gas is formed on an inner wall of an opening of the first mask 106 by gradually reducing a temperature of the processing target object from a first temperature T1 (80° C.) to a second temperature T2 (40° C.).
    Type: Application
    Filed: December 4, 2015
    Publication date: June 16, 2016
    Inventors: Kosei Ueda, Yoshinobu Hayakawa
  • Patent number: 8609547
    Abstract: In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containing CxFy (x is 3 or less and y is 8 or less), C4F8, a rare gas and O2 is supplied and a plasma of the processing gas is generated by applying a high frequency power to an upper or a lower electrode. Further, a high frequency power for bias is applied to the lower electrode, and a DC voltage is applied to the upper electrode.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: December 17, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Kosei Ueda, Hikoichiro Sasaki
  • Publication number: 20120149206
    Abstract: In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containing CxFy (x is 3 or less and y is 8 or less), C4F8, a rare gas and O2 is supplied and a plasma of the processing gas is generated by applying a high frequency power to an upper or a lower electrode. Further, a high frequency power for bias is applied to the lower electrode, and a DC voltage is applied to the upper electrode.
    Type: Application
    Filed: February 17, 2012
    Publication date: June 14, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kosei UEDA, Hikoichiro SASAKI
  • Patent number: 8129282
    Abstract: In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containing CxFy (x is 3 or less and y is 8 or less), C4F8, a rare gas and O2 is supplied and a plasma of the processing gas is generated by applying a high frequency power to an upper or a lower electrode. Further, a high frequency power for bias is applied to the lower electrode, and a DC voltage is applied to the upper electrode.
    Type: Grant
    Filed: July 6, 2007
    Date of Patent: March 6, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Kosei Ueda, Hikoichiro Sasaki
  • Patent number: 7510112
    Abstract: As useful information on a consumable component used in an image forming apparatus, a user of the image forming apparatus is notified at an appropriate timing that this moment is in a production discontinuation period of a consumable agent. Service information including a support period for a consumable component consumed along with image formation of a printer is stored in a nonvolatile memory. A CPU determines whether or not a toner low notification timing that is status information on the consumable component from the printer is in a consumable goods discontinuation timing that is set as a particular period of the support period. A content of consumable component information that an output device should be notified of is configured to be changed on the basis of the determination result.
    Type: Grant
    Filed: June 13, 2006
    Date of Patent: March 31, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kosei Ueda, Satoko Oshima, Rikio Shiba
  • Publication number: 20080020583
    Abstract: In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containing CxFy (x is 3 or less and y is 8 or less), C4F8, a rare gas and O2 is supplied and a plasma of the processing gas is generated by applying a high frequency power to an upper or a lower electrode. Further, a high frequency power for bias is applied to the lower electrode, and a DC voltage is applied to the upper electrode.
    Type: Application
    Filed: July 6, 2007
    Publication date: January 24, 2008
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kosei Ueda, Hikoichiro Sasaki
  • Publication number: 20060283933
    Abstract: As useful information on a consumable component used in an image forming apparatus, a user of the image forming apparatus is notified at an appropriate timing that this moment is in a production discontinuation period of a consumable agent. Service information including a support period for a consumable component consumed along with image formation of a printer is stored in a nonvolatile memory. A CPU determines whether or not a toner low notification timing that is status information on the consumable component from the printer is in a consumable goods discontinuation timing that is set as a particular period of the support period. A content of consumable component information that an output device should be notified of is configured to be changed on the basis of the determination result.
    Type: Application
    Filed: June 13, 2006
    Publication date: December 21, 2006
    Applicant: Canon Kabushiki Kaisha
    Inventors: Kosei Ueda, Satoko Oshima, Rikio Shiba