Patents by Inventor Kosei Ueno
Kosei Ueno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11567249Abstract: This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.Type: GrantFiled: December 25, 2018Date of Patent: January 31, 2023Assignee: National University Corporation Hokkaido UniversityInventors: Hiroaki Misawa, Xu Shi, Kosei Ueno, Tomoya Oshikiri, Quan Sun, Keiji Sasaki
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Publication number: 20210294009Abstract: This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.Type: ApplicationFiled: December 25, 2018Publication date: September 23, 2021Applicant: National University Corporation Hokkaido UniversityInventors: Hiroaki MISAWA, Xu SHI, Kosei UENO, Tomoya OSHIKIRI, Quan SUN, Keiji SASAKI
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Patent number: 10983052Abstract: An electricity measuring type surface plasmon resonance sensor including: a plasmon polariton intensifying sensor chip in which a prism and a sensor chip including a transparent electrode, an n-type transparent semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the transparent electrode, the n-type transparent semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the transparent electrode and the plasmon resonance film electrode.Type: GrantFiled: August 9, 2018Date of Patent: April 20, 2021Assignees: IMRA JAPAN KABUSHIKIKAISHA, NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITYInventors: Hironori Suzuki, Giles Allison, Masanori Sasaki, Koki Hayashi, Hiroaki Misawa, Kosei Ueno
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Publication number: 20200182789Abstract: An electricity measuring type surface plasmon resonance sensor including: a plasmon polariton intensifying sensor chip in which a prism and a sensor chip including a transparent electrode, an n-type transparent semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the transparent electrode, the n-type transparent semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the transparent electrode and the plasmon resonance film electrode.Type: ApplicationFiled: August 9, 2018Publication date: June 11, 2020Inventors: Hironori SUZUKI, Giles ALLISON, Masanori SASAKI, Koki HAYASHI, Hiroaki MISAWA, Kosei UENO
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Patent number: 9240286Abstract: The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method.Type: GrantFiled: September 2, 2010Date of Patent: January 19, 2016Assignee: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITYInventors: Hiroaki Misawa, Yoshiaki Nishijima, Kosei Ueno, Kei Murakoshi
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Patent number: 8895235Abstract: Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.Type: GrantFiled: March 1, 2011Date of Patent: November 25, 2014Assignee: National University Corporation Hokkaido UniversityInventors: Kosei Ueno, Hiroaki Misawa
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Publication number: 20130017499Abstract: Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.Type: ApplicationFiled: March 1, 2011Publication date: January 17, 2013Applicant: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITYInventors: Kosei Ueno, Hiroaki Misawa
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Publication number: 20120325301Abstract: The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method.Type: ApplicationFiled: September 2, 2010Publication date: December 27, 2012Inventors: Hiroaki Misawa, Yoshiaki Nishijima, Kosei Ueno, Kei Murakoshi
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Publication number: 20120204783Abstract: A container for crystallization of a biopolymer of the invention is provided that includes a structure wherein two or more noble metals and/or noble metal-coated bodies are arranged at an interval of 1 to 1,000 nm. There are also provided a crystallization apparatus of a biopolymer, comprising the container for crystallization of a biopolymer, a method for producing a biopolymer crystal, comprising the steps of preparing the container for crystallization of a biopolymer, and making the structure contact with a biopolymer solution, and a substrate for crystallization of a biopolymer, having a structure wherein two or more noble metals and/or noble metal-coated bodies are arranged at an interval of 1 to 1,000 nm.Type: ApplicationFiled: September 1, 2010Publication date: August 16, 2012Applicants: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY, NATIONAL UNIVERSITY CORPORATION GUNMA UNIVERSITYInventors: Tetsuo Okutsu, Kosei Ueno, Hiroaki Misawa
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Patent number: 8236421Abstract: In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic.Type: GrantFiled: July 8, 2011Date of Patent: August 7, 2012Assignees: Rohm Co., Ltd., National University Corporation Hokkaido UniversityInventors: Kosei Ueno, Hiroaki Misawa, Dai Ohnishi, Takui Sakaguchi, Yoichi Mugino
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Patent number: 8088484Abstract: In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic.Type: GrantFiled: September 2, 2008Date of Patent: January 3, 2012Assignees: Rohm Co. Ltd., National University Corporation Hokkaido UniversityInventors: Kosei Ueno, Hiroaki Misawa, Dai Ohnishi, Takui Sakaguchi, Yoichi Mugino
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Publication number: 20110266414Abstract: In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic.Type: ApplicationFiled: July 8, 2011Publication date: November 3, 2011Applicants: National University Corporation Hokkaido University, ROHM CO., LTD.Inventors: Kosei UENO, Hiroaki Misawa, Dai Ohnishi, Takui Sakaguchi, Yoichi Mugino
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Patent number: 8047713Abstract: Provided is a plasmon resonance detector that can detect temperature change in optical devices, in which the metal structure having plasmon resonance absorption is used for the optical devices. A diode formed of a conductive substrate, an n-type semiconductor layer, an i-type semiconductor layer, a p-type semiconductor layer, an n electrode (negative electrode), a p electrode (positive electrode), an insulating film, or the like is used as a semiconductor device whose resistance value changes in accordance with temperature change. A nanochain formed by connecting a plurality of metal nanoparticles is disposed on this diode. When the nanochain is irradiated with light, the nanochain generates heat. The heat generated in the nanochain is conducted to the diode. The resistance value of the diode changes in accordance with temperature change, and thus this change is read, a temperature or an amount of heat generation of the nanochain is measured, and existence and strength of the plasmon resonance are detected.Type: GrantFiled: December 22, 2008Date of Patent: November 1, 2011Assignee: Rohm Co., Ltd.Inventors: Kosei Ueno, Hiroaki Misawa, Dai Ohnishi, Takui Sakaguchi, Yoichi Mugino
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Patent number: 7824761Abstract: A metal structure capable of significantly increasing wavelength selectivity and polarization electivity for an incident light, and a production method thereof. First, a solid transparent substrate (glass substrate) (10) is cleaned and dried (S100). The surface of the substrate (10) is spin-coated with a positive electron lithography-use resist solution and then baked, and the resist solution is removed to form a resist thin film (20) on the substrate (10) (S200). A specified pattern is drawn on the resist thin film (20) with an electron beam, and the film is developed, rinsed and dried (S300). Then, metals such as chromium and then gold are formed sequentially on the substrate (10) by sputtering (S400). And, excessive resist materials are removed from the surface of the substrate (10) (S500), whereby metal nano-rod array (40) is completed.Type: GrantFiled: February 16, 2006Date of Patent: November 2, 2010Assignee: National University Corporation Hokkaido UniversityInventors: Hiroaki Misawa, Kosei Ueno, Yasuyuki Tsuboi, Keiji Sasaki
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Patent number: 7709810Abstract: There are provided a sensing device, a sensing apparatus, and a sensing method capable of realizing effective multi-photon absorption and local plasmon enhancement function. The sensing device can realize a high multi-photon excitation efficiency and selectivity by accurately controlling the material, shape, size, interval, and direction of metal particles arranged on a substrate. By employing the sensing device in various sensing apparatuses such as a fluorescent sensing apparatus, it is possible to realize sensing of detection object material with a high sensibility.Type: GrantFiled: March 17, 2006Date of Patent: May 4, 2010Assignee: National University Corporation Hokkaido UniversityInventors: Hiroaki Misawa, Kosei Ueno, Yasuyuki Tsuboi, Keiji Sasaki
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Publication number: 20100067016Abstract: Provided is a plasmon resonance detector that can detect temperature change in optical devices, in which the metal structure having plasmon resonance absorption is used for the optical devices. A diode formed of a conductive substrate, an n-type semiconductor layer, an i-type semiconductor layer, a p-type semiconductor layer, an n electrode (negative electrode), a p electrode (positive electrode), an insulating film, or the like is used as a semiconductor device whose resistance value changes in accordance with temperature change. A nanochain formed by connecting a plurality of metal nanoparticles is disposed on this diode. When the nanochain is irradiated with light, the nanochain generates heat. The heat generated in the nanochain is conducted to the diode. The resistance value of the diode changes in accordance with temperature change, and thus this change is read, a temperature or an amount of heat generation of the nanochain is measured, and existence and strength of the plasmon resonance are detected.Type: ApplicationFiled: December 22, 2008Publication date: March 18, 2010Applicants: ROHM CO., LTD., National University Corporation Hokkaido UniversityInventors: Kosei UENO, Hiroaki MISAWA, Dai OHNISHI, Takui SAKAGUCHI, Yoichi MUGINO
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Publication number: 20090091762Abstract: In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic.Type: ApplicationFiled: September 2, 2008Publication date: April 9, 2009Applicants: ROHM CO., LTD., National University Corporation Hokkaido UniversityInventors: Kosei Ueno, Hiroaki Misawa, Dai Ohnishi, Takui Sakaguchi, Yoichi Mugino
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Publication number: 20090032735Abstract: There are provided a sensing device, a sensing apparatus, and a sensing method capable of realizing effective multi-photon absorption and local plasmon enhancement function. The sensing device can realize a high multi-photon excitation efficiency and selectivity by accurately controlling the material, shape, size, interval, and direction of metal particles arranged on a substrate. By employing the sensing device in various sensing apparatuses such as a fluorescent sensing apparatus, it is possible to realize sensing of detection object material with a high sensibility.Type: ApplicationFiled: March 17, 2006Publication date: February 5, 2009Inventors: Hiroaki Misawa, Kosei Ueno, Yasuyuki Tsuboi, Keiji Sasaki
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Publication number: 20080160287Abstract: A metal structure capable of significantly increasing wavelength selectivity and polarization electivity for an incident light, and a production method thereof. First, a solid transparent substrate (glass substrate) (10) is cleaned and dried (S100). The surface of the substrate (10) is spin-coated with a positive electron lithography-use resist solution and then baked, and the resist solution is removed to form a resist thin film (20) on the substrate (10) (S200). A specified pattern is drawn on the resist thin film (20) with an electron beam, and the film is developed, rinsed and dried (S300). Then, metals such as chromium and then gold are formed sequentially on the substrate (10) by sputtering (S400). And, excessive resist materials are removed from the surface of the substrate (10) (S500), whereby metal nano-rod array (40) is completed.Type: ApplicationFiled: February 16, 2006Publication date: July 3, 2008Inventors: Hiroaki Misawa, Kosei Ueno, Yasuyuki Tsuboi, Keiji Sasaki