Patents by Inventor Koshi Ando
Koshi Ando has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8181678Abstract: The fueling device has a fueling pipe adapted to supply fuel pumped from the inlet opening the fuel tank. A grating member is situated inside the fueling pipe. The grating member includes an annular body positioned substantially concentrically with the fuel passage; and a support body adapted to support the annular body on the inside wall of the flow passage. Gaps present between the inside wall of the passage-defining member and the annular body and the support body constitute part of the fuel passage.Type: GrantFiled: June 25, 2009Date of Patent: May 22, 2012Assignee: Toyoda Gosei Co., Ltd.Inventors: Koshi Ando, Koji Sugiura
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Patent number: 8042564Abstract: A fuel cutoff valve is furnished with a casing defining a valve chamber, and a float mechanism housed to be able to rise and fall in the valve chamber. The casing is furnished with a closure plate situated in the space above the valve chamber and in a facing arrangement with a connecting passage. The closure plate is furnished with a vent hole that has been formed so as to divert the passage from the connecting passage to a second pipe line, and with a barrier wall that is situated in opposition to a first pipe line and that has been formed so as to divert the passage from the first pipe line to the second pipe line.Type: GrantFiled: May 21, 2009Date of Patent: October 25, 2011Assignee: Toyoda Gosei Co., Ltd.Inventors: Koshi Ando, Miho Sato
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Patent number: 7960918Abstract: An electronic device, and a corresponding light emission control method for the electronic device, emit light by utilizing recombination of electrons and holes the device and method input a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.0 and thereby causing light to be emitted intermittently. When an electron density is denoted by n, a hole density by p, a thermal velocity of electrons by Vth:n, a thermal velocity of holes by Vth:p, an electron capture cross section of a defect level by ?n, a hole capture cross section of a defect level by ?p, and a pulse width of the driving signal by W, the input driving signal has a pulse width W that satisfies W<1/{n·vth:n·?n·p·vth:p·?p/(n·vth:n·?n+p·vth:p·?p)}.Type: GrantFiled: February 4, 2008Date of Patent: June 14, 2011Assignee: Tottori UniversityInventors: Masahiro Adachi, Yutaka Hashimoto, Katsuhisa Kanzaki, Tomoki Abe, Hirofumi Kasada, Koshi Ando
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Publication number: 20100156311Abstract: In an electronic device having a light emitting section that emits light by utilizing recombination of electrons and holes and in a light emission control method for this electronic device, an electronic device and a light emission control method for this electronic device are provided in which lifetime improvement is achieved in the light emitting section. An electronic device and a light emission control method for the electronic device, the electronic device including: a light emitting section that emits light by utilizing recombination of electrons and holes; and a driving section that inputs to the light emitting section a pulse-shaped driving signal having a duty ratio higher than or equal to 0.7 and lower than 1.Type: ApplicationFiled: February 4, 2008Publication date: June 24, 2010Applicant: TOTTORI UNIVERSITYInventors: Masahiro Adachi, Yutaka Hashimoto, Katsuhisa Kanzaki, Tomoki Abe, Hirofumi Kasada, Koshi Ando
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Publication number: 20090320956Abstract: The fueling device has a fueling pipe adapted to supply fuel pumped from the inlet opening the fuel tank. A grating member is situated inside the fueling pipe. The grating member includes an annular body positioned substantially concentrically with the fuel passage; and a support body adapted to support the annular body on the inside wall of the flow passage. Gaps present between the inside wall of the passage-defining member and the annular body and the support body constitute part of the fuel passage.Type: ApplicationFiled: June 25, 2009Publication date: December 31, 2009Applicant: TOYODA GOSEI CO., LTD.Inventors: Koshi Ando, Koji Sugiura
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Publication number: 20090293962Abstract: A fuel cutoff valve is furnished with a casing defining a valve chamber, and a float mechanism housed to be able to rise and fall in the valve chamber. The casing is furnished with a closure plate situated in the space above the valve chamber and in a facing arrangement with a connecting passage. The closure plate is furnished with a vent hole that has been formed so as to divert the passage from the connecting passage to a second pipe line, and with a barrier wall that is situated in opposition to a first pipe line and that has been formed so as to divert the passage from the first pipe line to the second pipe line.Type: ApplicationFiled: May 21, 2009Publication date: December 3, 2009Applicant: TOYODA GOSEI CO., LTD.Inventors: Koshi Ando, Miho Sato
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Patent number: 6956251Abstract: A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.Type: GrantFiled: January 20, 2005Date of Patent: October 18, 2005Assignee: Sumitomo Electric Industries, Ltd.Inventors: Koshi Ando, Tomoki Abe, Takao Nakamura
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Publication number: 20050121692Abstract: A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. A blue-ultraviolet on-p-GaAs substrate avalanche Zn1-xMgxSySe1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime.Type: ApplicationFiled: January 20, 2005Publication date: June 9, 2005Inventors: Koshi Ando, Tomoki Abe, Takao Nakamura
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Patent number: 6861681Abstract: A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.Type: GrantFiled: July 16, 2003Date of Patent: March 1, 2005Assignee: Sumitomo Electric Industries, Ltd.Inventors: Koshi Ando, Tomoki Abe, Takao Nakamura
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Patent number: 6724018Abstract: A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.Type: GrantFiled: August 27, 2002Date of Patent: April 20, 2004Assignee: Sumitomo Electric Industries, Ltd.Inventors: Koshi Ando, Takao Nakamura
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Publication number: 20040038472Abstract: A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.Type: ApplicationFiled: July 16, 2003Publication date: February 26, 2004Inventors: Koshi Ando, Tomoki Abe, Takao Nakamura
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Publication number: 20030067011Abstract: A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, a p-Zn1-xMgxSySe1-y layer, a p-(ZnTe/ZnSe)m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode.Type: ApplicationFiled: August 27, 2002Publication date: April 10, 2003Inventors: Koshi Ando, Takao Nakamura