Abstract: A multichannel streamer cable includes a plurality of vibration receiving units connected in series. The vibration receiving units each include a geophone that receives vibration of a sound wave under water, an amplifier that amplifies a signal output from the geophone, an AD converter that digitizes the signal amplified by the amplifier, and a processing section that performs processing for causing an internal memory to store, as measurement data, a digital signal obtained by digitizing the amplified signal by the AD converter.

Abstract: An optical element (20) is formed by bonding the faces of first to fourth triangular prisms (21, 22, 23, 24) that form the apex angle, wherein bonding faces (21a, 22b) of the first and second triangular prisms, bonding faces (22a, 23b) of the second and third triangular prisms, bonding faces (23a, 24b) of the third and fourth triangular prisms, and bonding faces (24a, 21b) of the fourth and first triangular prisms are respectively bonded through an optical thin film. Each optical thin film allows the incident light to pass through, or reflects the incident light, depending on the polarization state. The optical element (20) splits an optical path at a first position of the optical thin film, and combines optical paths at a second position of the optical thin film.

Abstract: A semiconductor device inspecting apparatus includes a chamber, a stage situated in the chamber for placing a semiconductor device thereon, a femtosecond laser apparatus, and an electron microscope. The femtosecond laser apparatus includes a laser generating section for generating laser beams disposed outside the chamber, and a laser optical system for introducing the laser beams generated at the laser generating section into the chamber. The laser generating section generates femtosecond width pulse and a strength so that the semiconductor device on the stage is cut by the laser beams introduced inside the chamber. The electron microscope is disposed inside the chamber for observing the semiconductor device cut by the laser beams.

Abstract: The present invention provides a semiconductor device inspecting apparatus capable of generating a sharp cut cross section. The semiconductor device inspecting apparatus 1 comprises a stage 141 disposed in a vacuum chamber 11 in which a semiconductor device (sample S) is set, a femtosecond laser apparatus 12 for generating femtosecond laser beams FSLB which cut the semiconductor device, and an electron microscope (SEM 17) which observes a cut surface W of the semiconductor device which was cut by the laser beams.

Abstract: A scanning laser microscope capable of detecting a fine structure producing low contrast and easily measuring the length, the volume, and so forth of an object. A laser beam is focused onto the object. The beam is scanned at regular intervals, or in a digital fashion, in two dimensions. Light scattered from the object is detected by a detector to observe an image of the object. The output signal from the detector is digitized into a given number of gray levels in synchronism with the digital scans. The object image can be stored in a memory and processed while correlating the scanned position with the intensity of the scattered light at this position.