Abstract: Electrical device including a substrate having a surface and a radiofrequency field effect transistor (RF-FET) on the substrate surface. RF-FET includes a CNT layer on the substrate surface, the CNT layer including electrically conductive aligned carbon nanotubes, and pin-down anchor layers on the CNT layer. A first portion of the CNT layer, located in-between the pin-down anchor layers, is not covered by the pin-down anchor layers and is a channel region of the radiofrequency field effect transistor and second portions of the CNT layer are covered by the pin-down anchor layers. For cross-sections in a direction perpendicular to a common alignment direction of the aligned CNTs in the first portion of the CNT layer: the aligned CNTs have an average linear density in a range from 20 to 120 nanotubes per micron along the cross-section, and at least 40 percent of the aligned CNTs are discrete from any CNTs of the CNT layer.

Abstract: A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, the carbon nanotube solution including carbon nanotubes dispersed in chloroform, and a reservoir configured to contain a water subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

Abstract: Manufacturing an electrical device including providing a substrate having a surface and forming a radiofrequency field effect transistor on the surface, including forming a CNT layer on the surface and depositing a pin-down layer on the CNT layer. The pin-down layer is patterned to form separate pin-down anchor layers. A first portion of the CNT layer, located in-between the pin-down anchor layers and second portions of the CNT layer are covered by the pin-down anchor layers. For cross-sections in a direction perpendicular to a common alignment direction of the electrically conductive aligned carbon nanotubes in the first portion of the CNT layer the electrically conductive aligned carbon nanotubes have an average linear density in a range from 20 to 120 nanotubes per micron along the cross-sections, and at least 40 percent of the electrically conductive aligned carbon nanotubes are discrete from any carbon nanotubes of the CNT layer.

Abstract: A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, the carbon nanotube solution including carbon nanotubes dispersed in chloroform, and a reservoir configured to contain a water subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

Abstract: A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, and a reservoir configured to contain a subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

Abstract: Manufacturing an electrical device including providing a substrate having a surface and providing a sacrificial layer on the surface of the substrate. Depositing a solution of carbon nanotubes suspended in a solvent on a surface of the sacrificial layer and removing the solvent of the solution to thereby leave the carbon nanotubes on the sacrificial layer. Removing the sacrificial layer whereby the carbon nanotubes form a carbon nanotube layer and the carbon nanotubes in the carbon nanotube layer are aligned with each other. An electrical device, including a substrate having a surface and a layer of carbon nanotubes on the surface of the substrate. The carbon nanotubes in the layer are aligned with each other, such that an alignment angle between adjacent ones of the carbon nanotubes is within about ±20 degrees.

Abstract: A system for producing a layer of aligned carbon nanotubes, the system comprising: a sprayer, a solution delivery tube configured to deliver a carbon nanotube solution to the sprayer, and a reservoir configured to contain a subphase. The sprayer is configured to generate a continuous spray of the carbon nanotube solution. The continuous floating layer is supported by the subphase. The spray of carbon nanotube solution includes droplets of the carbon nanotube solution, the droplets having a median diameter in a range from about 1 to about 100 microns. The sprayer maintains the continuous floating layer of carbon nanotube solution on the subphase as a substrate is inserted into or removed from the subphase, the carbon nanotube solution being in contact with the substrate.

Abstract: The subject technology relates to a method including steps for disposing a first electrically conductive material on a substrate to form a first layer of electrodes on the substrate, wherein the first layer includes a source electrode and a drain electrode, and printing a film including carbon nanotubes between the source electrode and the drain electrode, thereby defining at least a first interface between the carbon nanotube film and the source electrode and a second interface between the carbon nanotube film and drain electrode. In certain aspects, the method can further include steps for disposing a second electrically conductive material over the first interface between the carbon nanotube film and the source electrode and the second interface between the carbon nanotube film and the drain electrode. In certain aspects, a transistor device is also provided.

Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

Abstract: A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.

Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

Abstract: The subject technology relates to a method including steps for disposing a first electrically conductive material on a substrate to form a first layer of electrodes on the substrate, wherein the first layer includes a source electrode and a drain electrode, and printing a film including carbon nanotubes between the source electrode and the drain electrode, thereby defining at least a first interface between the carbon nanotube film and the source electrode and a second interface between the carbon nanotube film and drain electrode. In certain aspects, the method can further include steps for disposing a second electrically conductive material over the first interface between the carbon nanotube film and the source electrode and the second interface between the carbon nanotube film and the drain electrode. In certain aspects, a transistor device is also provided.

Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

Abstract: Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

Abstract: The disclosure provides sensor for gas sensing including CO2 gas sensors comprising a porous framework sensing area for binding an analyte gas.

Abstract: The disclosure provides sensor for gas sensing including CO2 gas sensors comprising a porous framework sensing area for binding an analyte gas.

Abstract: The disclosure provides sensor for gas sensing including CO2 gas sensors comprising a porous framework sensing area for binding an analyte gas.

Abstract: The disclosure provides sensor for gas sensing including CO2 gas sensors comprising a porous framework sensing area for binding an analyte gas.