Patents by Inventor Kosuke BAMBA

Kosuke BAMBA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 8921889
    Abstract: A semiconductor device includes a semiconductor substrate on which a diode region and an IGBT region are formed. The diode region of the semiconductor substrate includes a first conductive type specific semiconductor region that is formed in a portion of an area facing a front surface of the semiconductor substrate, a second conductive type anode region that is formed in another portion of the area facing the front surface of the semiconductor substrate and is formed along a lower side of the specific semiconductor region, and a first conductive type diode drift region that is formed on a lower side of the anode region. The specific semiconductor region is separated from the diode drift region by the anode region, and is electrically connected to the trench gate electrode.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: December 30, 2014
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventor: Kosuke Bamba
  • SEMICONDUCTOR DEVICE
    Publication number: 20140159109
    Abstract: A semiconductor device includes a semiconductor substrate on which a diode region and an IGBT region are formed. The diode region of the semiconductor substrate includes a first conductive type specific semiconductor region that is formed in a portion of an area facing a front surface of the semiconductor substrate, a second conductive type anode region that is formed in another portion of the area facing the front surface of the semiconductor substrate and is formed along a lower side of the specific semiconductor region, and a first conductive type diode drift region that is formed on a lower side of the anode region. The specific semiconductor region is separated from the diode drift region by the anode region, and is electrically connected to the trench gate electrode.
    Type: Application
    Filed: November 27, 2013
    Publication date: June 12, 2014
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventor: Kosuke BAMBA