Abstract: A probe guide plate includes a first silicon substrate having first through-holes formed therein, an insulation layer formed on the first silicon substrate and having an opening on a region in which the first through-holes are arranged, a second silicon substrate arranged on the insulation layer and having second through-holes formed at positions corresponding to the first through-holes, and a silicon oxide layer formed on exposed surfaces of the first silicon substrate and the second silicon substrate.

Abstract: A probe guide plate includes a first silicon substrate, a first recess portion formed in an upper surface of the first silicon substrate, first through-holes formed in the first silicon substrate at a bottom of the first recess portion, a second silicon substrate directly bonded on the first silicon substrate, a second recess portion formed to face the first recess portion in a lower surface of the second silicon substrate, and second through-holes formed in the second silicon substrate at a bottom of the second recess portion and arranged to correspond to the first through-holes, A notch portion is formed at an upper end portion of an inner wall of each of the first through-holes of the first silicon substrate.

Abstract: A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer.

Abstract: OBJECT To improve the strength of a probe guide and improve the abrasion resistance of the probe guide. MEANS FOR SETTLEMENT A guide plate 20 is formed of a silicon plate 22 having guide holes 23 respectively adapted to support contact probes 13, the inner walls of the guide holes 23 include a guide film 25 formed on the inner wall surfaces of corresponding penetration-processed holes 24 of the silicon plate 22, the cross-sectional areas of the penetration-processed holes 24 gradually increase toward a first surface of the silicon plate 22, and the film thickness of the guide film 25 gradually increases toward the first surface of the silicon plate 22. By employing such a configuration, as compared with the tilts of the inner wall surfaces of the penetration-processed holes 24, the tilts of the inner wall surfaces of the guide holes 23 can be suppressed, and the strength of the silicon plate 20 can be improved. Accordingly, the abrasion resistance of a probe guide 100 can be improved.

Abstract: A probe guide plate used for a semiconductor inspection apparatus that inputs and outputs an electrical signal for inspecting an object via a probe needle, the probe guide plate includes a silicon substrate provided with a through hole that penetrates the silicon substrate from one surface to another surface through which the probe needle is inserted, the through hole including a first tapered portion provided at an end portion at the one surface side such that the hole size of which increases as it approaches the one surface, and a second tapered portion provided at an end portion at the other surface side such that the hole size of which increases as it approaches the other surface; and a silicon oxide film formed on an inner wall surface of the through hole including the first tapered portion and the second tapered portion.

Abstract: OBJECT To improve the strength of a probe guide and improve the abrasion resistance of the probe guide. MEANS FOR SETTLEMENT A guide plate 20 is formed of a silicon plate 22 having guide holes 23 respectively adapted to support contact probes 13, the inner walls of the guide holes 23 include a guide film 25 formed on the inner wall surfaces of corresponding penetration-processed holes 24 of the silicon plate 22, the cross-sectional areas of the penetration-processed holes 24 gradually increase toward a first surface of the silicon plate 22, and the film thickness of the guide film 25 gradually increases toward the first surface of the silicon plate 22. By employing such a configuration, as compared with the tilts of the inner wall surfaces of the penetration-processed holes 24, the tilts of the inner wall surfaces of the guide holes 23 can be suppressed, and the strength of the silicon plate 20 can be improved. Accordingly, the abrasion resistance of a probe guide 100 can be improved.

Abstract: A probe guide plate includes a first silicon substrate having first through-holes formed therein, an insulation layer formed on the first silicon substrate and having an opening on a region in which the first through-holes are arranged, a second silicon substrate arranged on the insulation layer and having second through-holes formed at positions corresponding to the first through-holes, and a silicon oxide layer formed on exposed surfaces of the first silicon substrate and the second silicon substrate.

Abstract: A probe guide plate includes a first silicon substrate, a first recess portion formed in an upper surface of the first silicon substrate, first through-holes formed in the first silicon substrate at a bottom of the first recess portion, a second silicon substrate directly bonded on the first silicon substrate, a second recess portion formed to face the first recess portion in a lower surface of the second silicon substrate, and second through-holes formed in the second silicon substrate at a bottom of the second recess portion and arranged to correspond to the first through-holes, A notch portion is formed at an upper end portion of an inner wall of each of the first through-holes of the first silicon substrate.

Abstract: A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer.

Abstract: There is provided a probe guide plate. The probe guide plate includes: a substrate having a through hole for guiding a probe, which is formed through the substrate, wherein the substrate includes a first main surface and a second main surface opposite to the first main surface; and a first insulating film formed on an inner wall of the through hole and on the first and second main surfaces of the substrate such that portions of the first and second main surfaces of the substrate are exposed.

Abstract: The invention provides a guide plate for a probe card including a silicon substrate including a surface and a through-hole, an edge part of the through-hole, and a curved-face part. The through-hole is configured to guide a probe and includes an inner wall face. The edge part of the through-hole is constituted by the surface of the silicon substrate and the inner wall face of the through-hole. The curved-face part is formed on the edge part and formed of a silicon dioxide film.

Abstract: A cap for installing a semiconductor device that can send or receive a light having a predetermined wavelength, the cap including a recess for installing the semiconductor device, the recess being defined by a through-hole penetrating an upper surface of a silicon substrate and a lower surface of the silicon substrate, the through-hole having an upper end part of the through-hole on a side of the upper surface of the silicon substrate and a lower end part of the through-hole on a side of the lower surface of the silicon substrate, and a coating film formed to cover the upper surface of the silicon substrate and the upper end part of the through-hole, wherein the coating film that covers the upper end part of the through-hole is a window part that transmits the light having a predetermined wavelength.

Abstract: A cap for installing a semiconductor device that can send or receive a light having a predetermined wavelength, the cap including a recess for installing the semiconductor device, the recess being defined by a through-hole penetrating an upper surface of a silicon substrate and a lower surface of the silicon substrate, the through-hole having an upper end part of the through-hole on a side of the upper surface of the silicon substrate and a lower end part of the through-hole on a side of the lower surface of the silicon substrate, and a coating film formed to cover the upper surface of the silicon substrate and the upper end part of the through-hole, wherein the coating film that covers the upper end part of the through-hole is a window part that transmits the light having a predetermined wavelength.

Abstract: A probe guide plate used for a semiconductor inspection apparatus that inputs and outputs an electrical signal for inspecting an object via a probe needle, the probe guide plate includes a silicon substrate provided with a through hole that penetrates the silicon substrate from one surface to another surface through which the probe needle is inserted, the through hole including a first tapered portion provided at an end portion at the one surface side such that the hole size of which increases as it approaches the one surface, and a second tapered portion provided at an end portion at the other surface side such that the hole size of which increases as it approaches the other surface; and a silicon oxide film formed on an inner wall surface of the through hole including the first tapered portion and the second tapered portion.

Abstract: The invention provides a guide plate for a probe card including a silicon substrate including a surface and a through-hole, an edge part of the through-hole, and a curved-face part. The through-hole is configured to guide a probe and includes an inner wall face. The edge part of the through-hole is constituted by the surface of the silicon substrate and the inner wall face of the through-hole. The curved-face part is formed on the edge part and formed of a silicon dioxide film.

Abstract: There is provided a probe guide plate. The probe guide plate includes: a substrate having a through hole for guiding a probe, which is formed through the substrate, wherein the substrate includes a first main surface and a second main surface opposite to the first main surface; and a first insulating film formed on an inner wall of the through hole and on the first and second main surfaces of the substrate such that portions of the first and second main surfaces of the substrate are exposed.