Abstract: A silicon focus ring in a processing chamber of a plasma etching apparatus is provided. The silicon focus ring comprises: silicon wastes an amount of which is determined based on a content of impurity in the silicon wastes and a target value of an electrical resistance of the silicon focus ring; a silicon source material an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring; and impurity an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring. The target value of the electrical resistance of the silicon focus ring is about 2?.

Abstract: A silicon focus ring in a processing chamber of a plasma etching apparatus is provided. The silicon focus ring comprises: silicon wastes an amount of which is determined based on a content of impurity in the silicon wastes and a target value of an electrical resistance of the silicon focus ring; a silicon source material an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring; and impurity an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the electrical resistance of the silicon focus ring. The target value of the electrical resistance of the silicon focus ring is about 2?.

Abstract: A silicon component in a processing chamber for performing an etching process on a substrate is provided. The silicon component contains recycled silicon obtained by a silicon component recycling method including: collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity into a crucible; and manufacturing the final product using the silicon ingot.

Abstract: A method is provided of refurbishing a quartz glass component which has been contaminated and eroded due to continuous use in a plasma process apparatus for semiconductor manufacturing. In the method, a surface deposit on the quartz glass component is removed by an appropriate cleaning method which is determined depending on the contamination status, and presence or absence of residual deposit on the cleaned component is carefully inspected through irradiating with light of a predetermined wavelength to cause fluorescence effect. Then the eroded portion of the quartz glass component is restored to the original state by flame treatment and precision machining. As a result, the refurbishment method can increase the mechanical strength of the quartz glass component, enhance the productivity and yield ratio through efficient use of the remaining materials of the quartz glass.

Abstract: A silicon component in a processing chamber for performing an etching process on a substrate is provided. The silicon component contains recycled silicon obtained by a silicon component recycling method including: collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity into a crucible; and manufacturing the final product using the silicon ingot.

Abstract: A method of recycling a silicon component for a plasma etching apparatus includes a collecting process of collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; a measurement process of obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; an input amount determination process of determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; and a silicon ingot manufacturing process of manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity based on the input amounts determined in the input amount determination process into a crucible.

Abstract: A method of recycling a silicon component for a plasma etching apparatus includes a collecting process of collecting silicon wastes from any one of a silicon component for a plasma etching apparatus and a silicon ingot for a semiconductor wafer; a measurement process of obtaining a content of impurity based on an electric characteristic of the collected silicon wastes; an input amount determination process of determining an input amount of the silicon wastes, an input amount of a silicon source material, and an input amount of impurity based on the content of impurity obtained in the measurement process and a target value of an electric characteristic of a final product; and a silicon ingot manufacturing process of manufacturing a silicon ingot by inputting the silicon wastes, the silicon source material, and the impurity based on the input amounts determined in the input amount determination process into a crucible.

Abstract: A method is provided of refurbishing a quartz glass component which has been contaminated and eroded due to continuous use in a plasma process apparatus for semiconductor manufacturing. In the method, a surface deposit on the quartz glass component is removed by an appropriate cleaning method which is determined depending on the contamination status, and presence or absence of residual deposit on the cleaned component is carefully inspected through irradiating with light of a predetermined wavelength to cause fluorescence effect. Then the eroded portion of the quartz glass component is restored to the original state by flame treatment and precision machining. As a result, the refurbishment method can increase the mechanical strength of the quartz glass component, enhance the productivity and yield ratio through efficient use of the remaining materials of the quartz glass.

Abstract: In a plasma apparatus 1 for performing plasma processing on a substrate W to be processed, an upper electrode 21, which faces opposite a susceptor 5 which is a lower electrode, has an electrode supporting body 22 and an electrode plate 23. In the center on the side of the electrode supporting body at the boundary between the two, a hollow 62, the dimensions of which are determined such that a resonance is generated at a frequency of supplied high-frequency electric power and an electric field orthogonal to the electrode plate 23 is generated inside, is provided. Furthermore, a shield ring which surrounds the electrode plate 23 has a shape in which the lower surface is in the same level as the electrode plate 23, and it is made of a material that is not easily eroded by the plasma. By this, processing small features becomes possible with uniform distribution of plasma and in less degradation due to change over time.

Abstract: A gas removal system that removes a halogen gas remaining inside a processing chamber after executing a specific type of processing inside the processing chamber maintained in an airtight state with plasma obtained through discharge dissociation of the halogen gas supplied from a gas supply device comprises a pressure control device that controls the pressure inside the processing chamber, an air supply device that supplies the atmospheric air into the processing chamber after the pressure inside the processing chamber is lowered by the pressure control device, a control device that controls the air supply device and an evacuation device that evacuates a gas produced through a reaction of the halogen gas and the atmospheric air having occurred inside the processing chamber.

Abstract: A member of processing a quartz member for a plasma processing device capable of suppressing the production of particles at the beginning of the use thereof and the production of chips thereafter, the quartz member for the plasma processing device, and the plasma processing device having the quartz member mounted thereon, the method comprising the steps of removing a large number of cracks 155 produced, after a diamond grinding, in the quartz member 151 for the plasma processing device used for a shield ring and a focus ring by performing a surface processing with abrasive grains of, for example, #320 to 400 in grain size, and performing the surface processing by using abrasive grains of smaller grain size to remove ruptured layers 163 while maintaining irregularities capable of adhering and holding deposit thereto.

Abstract: Maintenance work on an apparatus is facilitated, the maintenance cycle is extended and an improvement in throughput is achieved. A processing chamber 2 and an auxiliary vacuum chamber 3 are connected via a transfer port 20 formed through their wall surfaces. At the inner wall of the transfer port 20, a detachable gate liner 100 constituted of a plurality of members is installed. The maintenance work at the inner wall of the transfer port is facilitated since the gate liner 100 alone simply needs to be disengaged to be washed, replaced or the like. Insulating films 200 and 300 constituted of a rare earth oxide spray-deposit film with high plasma erosion resistance are used to coat the surface of the gate liner 100 and the surface of a gate valve 4 over the area covering the transfer port 20. As a result, damage attributable to plasma does not occur readily at these surfaces, and the extent of metal contamination and dust generation is lowered.

Abstract: When a sprayed coating, which is constituted of alumina, a rare earth oxide, polyimide or polybenzimidazole and covers a surface of a base material of a plasma processing container internal member, becomes degraded through use in a plasma environment, the same material as that constituting the sprayed coating is resprayed over the degraded sprayed coating. As a result, the plasma processing container with its surface having become degraded through use in the plasma environment can be restored to an as-good-as-new state.

Abstract: A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.

Abstract: A gas removal system that removes a halogen gas remaining inside a processing chamber after executing a specific type of processing inside the processing chamber maintained in an airtight state with plasma obtained through discharge dissociation of the halogen gas supplied from a gas supply device comprises a pressure control device that controls the pressure inside the processing chamber, an air supply device that supplies the atmospheric air into the processing chamber after the pressure inside the processing chamber is lowered by the pressure control device, a control device that controls the air supply device and an evacuation device that evacuates a gas produced through a reaction of the halogen gas and the atmospheric air having occurred inside the processing chamber.

Abstract: In a plasma apparatus 1 for performing plasma processing on a substrate W to be processed, an upper electrode 21, which faces opposite a susceptor 5 which is a lower electrode, has an electrode supporting body 22 and an electrode plate 23. In the center on the side of the electrode supporting body at the boundary between the two, a hollow 62, the dimensions of which are determined such that a resonance is generated at a frequency of supplied high-frequency electric power and an electric field orthogonal to the electrode plate 23 is generated inside, is provided. Furthermore, a shield ring which surrounds the electrode plate 23 has a shape in which the lower surface is in the same level as the electrode plate 23, and it is made of a material that is not easily eroded by the plasma. By this, processing small features becomes possible with uniform distribution of plasma and in less degradation due to change over time.

Abstract: An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A plasma etching apparatus includes a worktable disposed in a hermetic process chamber. The worktable has a main surface for placing a wafer thereon, and a sub-surface for placing a focus ring thereon. A cooling mechanism for supplying cold to the main surface and sub-surface is disposed in the worktable. A heat transfer medium made of conductive silicone rubber is interposed between the sub-surface and focus ring. A press mechanism presses the focus ring toward the sub-surface. The heat transfer medium improves thermal conductivity between the sub-surface and focus ring to be higher than in a case with no thermal transfer medium.