Patents by Inventor Kosuke KAWABATA

Kosuke KAWABATA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Supported catalyst and method of producing fibrous carbon nanostructures
    Patent number: 11364486
    Abstract: A supported catalyst comprises: a support that is particulate; and a composite layer laminate formed outside the support and including two or more composite layers, wherein each of the composite layers includes a catalyst portion containing a catalyst and a metal compound portion containing a metal compound, the support contains 10 mass % or more of each of Al and Si, and a volume-average particle diameter of the support is 50 ?m or more and 400 ?m or less.
    Type: Grant
    Filed: February 17, 2017
    Date of Patent: June 21, 2022
    Assignees: WASEDA UNIVERSITY, ZEON CORPORATION
    Inventors: Suguru Noda, Kosuke Kawabata, Takayoshi Hongo
  • SUPPORTED CATALYST AND METHOD OF PRODUCING FIBROUS CARBON NANOSTRUCTURES
    Publication number: 20190046959
    Abstract: A supported catalyst comprises: a support that is particulate; and a composite layer laminate formed outside the support and including two or more composite layers, wherein each of the composite layers includes a catalyst portion containing a catalyst and a metal compound portion containing a metal compound, the support contains 10 mass % or more of each of Al and Si, and a volume-average particle diameter of the support is 50 ?m or more and 400 ?m or less.
    Type: Application
    Filed: February 17, 2017
    Publication date: February 14, 2019
    Applicants: WASEDA UNIVERSITY, ZEON CORPORATION
    Inventors: Suguru NODA, Kosuke KAWABATA, Takayoshi HONGO
  • Nitride semiconductor light-emitting element
    Patent number: 9324908
    Abstract: Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.
    Type: Grant
    Filed: March 28, 2014
    Date of Patent: April 26, 2016
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Masanori Watanabe, Satoshi Komada, Tomoya Inoue, Kosuke Kawabata
  • NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    Publication number: 20150349197
    Abstract: Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.
    Type: Application
    Filed: March 28, 2014
    Publication date: December 3, 2015
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Masanori WATANABE, Satoshi KOMADA, Tomoya INOUE, Kosuke KAWABATA