Patents by Inventor Kosuke KOIWA

Kosuke KOIWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10453699
    Abstract: An etching method includes a loading step of loading into a chamber a target substrate in which a mask film is laminated on an organic film; a first etching step of etching the organic film below the mask film by plasma of a processing gas in which a flow rate ratio of a second gas containing sulfur to a first gas containing oxygen is set to a first flow rate ratio; and a second etching step of further etching the organic film by plasma of a processing gas in which a flow rate ratio of the second gas to the first gas is set to a second flow rate ratio different from the first flow rate ratio. The first etching step and the second etching step are alternately performed multiple times.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: October 22, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Kosuke Koiwa
  • Publication number: 20180342401
    Abstract: An etching method includes a loading step of loading into a chamber a target substrate in which a mask film is laminated on an organic film; a first etching step of etching the organic film below the mask film by plasma of a processing gas in which a flow rate ratio of a second gas containing sulfur to a first gas containing oxygen is set to a first flow rate ratio; and a second etching step of further etching the organic film by plasma of a processing gas in which a flow rate ratio of the second gas to the first gas is set to a second flow rate ratio different from the first flow rate ratio. The first etching step and the second etching step are alternately performed multiple times.
    Type: Application
    Filed: May 24, 2018
    Publication date: November 29, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Kosuke KOIWA