Abstract: A self-luminous device 1 is one embodiment which has an increased light extraction efficiency by optimizing the distribution of refractive index in semiconductor layers. The self-luminous device 1 includes a first layer (semiconductor layer 2), a light emitting layer 3 overlaying the first layer (semiconductor layer 2), and a second layer (semiconductor layer 4) overlaying the light emitting layer 3. The first layer (semiconductor layer 2) and the second layer (semiconductor layer 4) have different refractive indices so that the refractive indices of the two layers (semiconductor layers 2 and 4) are asymmetric with respect to the light emitting layer interposed therebetween. In the refractive index distribution of asymmetric layers (semiconductor layers), the refractive index of the second layer (semiconductor layer 4) is higher than that of the first layer (semiconductor layer 2).