Abstract: Disclosed is a method for producing a spherical silicon single-crystal, which comprises the steps of heating and melting a silicon material held in a vessel, keeping the molten silicon material at a temperature around its melting point for a given time-period to partly solidify the molten silicon material, and dropping the molten silicon material including a solidified portion, from the vessel into a gas phase. The spherical silicon single-crystal production method of the present invention makes it passable to obtain a spherical silicon single-crystal having a higher degree of crystallinity with enhanced efficiency in a simplified manner.