Abstract: A control device reads power consumption, information on the delivery number and weight of a first product set, and information on the delivery number and weight of a second product set from a storage device. The control device proportionally divides the power consumption. The control device reads a first conversion formula from the storage device, and calculates CO2 emissions from transportation of the first product set from an A station to a B station and CO2 emissions from transportation of the second product set from the A station to the B station by substituting the power consumptions, into the first conversion formula.

Abstract: A management device includes a communication device and a control device. The communication device is configured to communicate with a moving object configured to transport a product from an upstream company to a downstream company. The control device is configured to calculate CO2 emissions emitted by transportation of the product based on an amount of energy consumed by the moving object from a transportation start time point to a transportation completion time point of the product.

Abstract: A management method for managing a CO2 emission amount to be emitted by producing a product, includes: reading out a first CO2 emission amount that is a CO2 emission amount per unit weight of a first raw material and a second CO2 emission amount that is a CO2 emission amount per unit weight of a second raw material; and calculating the CO2 emission amount of the product based on a CO2 emission amount to be calculated from the first CO2 emission amount and from a weight of the first raw material used to produce the product, and a CO2 emission amount to be calculated from the second CO2 emission amount and from a weight of the second raw material used to produce the product.

Abstract: A management method for management of a CO2 emission amount emitted by production of a product in a production line where a first product and a second product are produced includes acquiring a power consumption amount consumed in the production line for a predetermined period, and calculating a CO2 emission amount for each product by allocating the power consumption amount based on a ratio of a total work time required to produce the first product in the production line during the predetermined period and a total work time required to produce the second product in the production line during the predetermined period.

Abstract: A capacitively coupled plasma processing apparatus includes a chamber; a gas supply that supplies an inert gas into the chamber; a substrate support including a lower electrode; an upper electrode provided above the substrate support and including silicon; a first radio-frequency power supply electrically connected to the upper electrode; a second radio-frequency power supply electrically connected to the lower electrode; a bias power supply that applies a negative bias voltage to the upper electrode; and a controller that controls an overall operation of the capacitively coupled plasma processing apparatus such that the silicon-containing material is deposited on sidewalls of a mask of the substrate to narrow an opening formed on the mask by an amount greater in a second direction than in a first direction.

Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method comprises performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further comprises forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further comprises performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Abstract: A capacitively coupled plasma processing apparatus includes a chamber; a gas supply that supplies an inert gas into the chamber; a substrate support including a lower electrode; an upper electrode provided above the substrate support and including silicon; a first radio-frequency power supply electrically connected to the upper electrode; a second radio-frequency power supply electrically connected to the lower electrode; a bias power supply that applies a negative bias voltage to the upper electrode; and a controller that controls an overall operation of the capacitively coupled plasma processing apparatus such that the silicon-containing material is deposited on sidewalls of a mask of the substrate to narrow an opening formed on the mask by an amount greater in a second direction than in a first direction.

Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method includes performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further includes forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further includes performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Abstract: An automatic analysis apparatus includes a rack identification information reading unit for reading rack identification information assigned to a specimen rack, a CTS drive unit for executing a piercing operation of piercing the stopper of the specimen vessel having the stopper at a specimen suction position by a piercer and sucking a specimen in the specimen vessel having the stopper by a specimen suction nozzle passing through a hole of the stopper formed by the piercer, a piercing condition setting unit for setting a piercing operation condition by the piercer for the specimen vessel having the stopper loaded in the specimen rack based on the rack identification information read by the rack identification information reading unit, and a control unit for controlling an operation of the CTS drive unit based on a set piercing operation condition.

Abstract: Independent automatic analysis apparatuses include controllers for controlling an operation of each unit of the apparatus, reagent-related information input/output units for inputting and outputting reagent-related information I related to a reagent installed in a reagent supply portion including a reagent in use, reagent vessel detection units for detecting that a reagent vessel is taken in and/or taken out of the automatic analysis apparatus, and reagent-related information reading units for reading reagent-related information from the reagent and/or reagent vessel in use detected to be taken in by the reagent vessel detection unit. The controllers compare the reagent-related information read by the reagent-related information reading unit with the reagent-related information input to the reagent-related information input/output units, and control an operation of the reagent supply portion based on a comparison result thereof.

Abstract: A plasma processing method includes: placing a substrate on a substrate support provided in a chamber of a capacitively coupled plasma processing apparatus where the substrate includes a silicon-containing film and a mask provided on the silicon-containing film and having an opening having a longitudinal direction; and supplying an inert gas into the chamber; and selectively performing one of supplying a first radio-frequency power to an upper electrode of the plasma processing apparatus to generate plasma from the inert gas and supplying a second radio-frequency power to a lower electrode of the plasma processing apparatus included in the substrate support, and applying a negative bias voltage to the upper electrode to cause positive ions from the plasma to collide with the upper electrode and release a silicon-containing material from the upper electrode, thereby depositing the silicon-containing material on the substrate.

Abstract: A processing apparatus which processes a substrate is disclosed. The processing apparatus comprises: a plurality of processing chambers which process the substrate in an atmosphere of a desired processing gases; a plurality of tank units provided for each of the plurality of processing chambers, the plurality of tank units including a plurality of tanks configured for temporarily storing the processing gases; and one or more gas boxes supplying the processing gases to the processing chambers via the tank units. The substrate processing apparatus allows the number of gas boxes to be reduced.

Abstract: A plasma etching method performed by a plasma processing apparatus is provided. The plasma processing apparatus includes an edge ring which includes an inner edge ring provided in a vicinity of a substrate to be placed on a stage, a middle edge ring arranged outside the inner edge ring, the middle edge ring being configured to be moved vertically by an actuation mechanism, and an outer edge ring arranged outside the middle edge ring. The method includes: performing first etching based on a first process condition; performing second etching based on a second process condition different from the first process condition; and moving the middle edge ring by the actuation mechanism, the moving being performed after the first etching is performed and before the second etching is performed.

Abstract: A plasma processing method includes: placing a substrate on a substrate support provided in a chamber of a capacitively coupled plasma processing apparatus where the substrate includes a silicon-containing film and a mask provided on the silicon-containing film and having an opening having a longitudinal direction; and supplying an inert gas into the chamber; and selectively performing one of supplying a first radio-frequency power to an upper electrode of the plasma processing apparatus to generate plasma from the inert gas and supplying a second radio-frequency power to a lower electrode of the plasma processing apparatus included in the substrate support, and applying a negative bias voltage to the upper electrode to cause positive ions from the plasma to collide with the upper electrode and release a silicon-containing material from the upper electrode, thereby depositing the silicon-containing material on the substrate.

Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method includes performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further includes forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further includes performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Abstract: A plasma etching method performed by a plasma processing apparatus is provided. The plasma processing apparatus includes an edge ring which includes an inner edge ring provided in a vicinity of a substrate to be placed on a stage, a middle edge ring arranged outside the inner edge ring, the middle edge ring being configured to be moved vertically by an actuation mechanism, and an outer edge ring arranged outside the middle edge ring. The method includes: performing first etching based on a first process condition; performing second etching based on a second process condition different from the first process condition; and moving the middle edge ring by the actuation mechanism, the moving being performed after the first etching is performed and before the second etching is performed.

Abstract: Embodiments of the invention describe a method for controlling etching in pitch doubling. According to one embodiment, the method includes receiving a substrate having a pattern thereon defined by spacers formed on sidewalls of a plurality mandrels, and transferring the pattern defined by the spacers into the substrate using a plasma etch process that etches the mandrels and the substrate, the transferring forming first recessed features in the substrate below the mandrels and second recessed features in the substrate between the mandrels, where the plasma etch process utilizes an etching gas containing O2 gas, and the relative amount of O2 gas in the etching gas is selected to control the depth of the first recessed features relative to the depth of second recessed features. According to another embodiment, the substrate contains a mask layer thereon and a pattern on the mask layer.

Abstract: Embodiments of the invention describe a method for controlling etching in pitch doubling. According to one embodiment, the method includes receiving a substrate having a pattern thereon defined by spacers formed on sidewalls of a plurality mandrels, and transferring the pattern defined by the spacers into the substrate using a plasma etch process that etches the mandrels and the substrate, the transferring forming first recessed features in the substrate below the mandrels and second recessed features in the substrate between the mandrels, where the plasma etch process utilizes an etching gas containing O2 gas, and the relative amount of O2 gas in the etching gas is selected to control the depth of the first recessed features relative to the depth of second recessed features. According to another embodiment, the substrate contains a mask layer thereon and a pattern on the mask layer.

Abstract: The operation control data about the component device constituting the synchrotron 13 are structured to include an initial acceleration control data item, a plural extraction control data items, a plural energy change control data items that connect the plural extraction control data items. The plural extraction control data items include extraction condition setting data items and extraction condition cancellation data items corresponding to the plural extraction control data items. As a result, a particle beam irradiation system capable of controlling changes in beam energy, updating operation cycle, and extracting beam in a short time can be provided.

Abstract: A method for patterning a substrate is described. The patterning method may include conformally depositing a material layer over a pattern according to a conformal deposition process, selectively depositing a second material layer on an exposed surface of the material layer according to a selected deposition process recipe; partially removing the material layer using a plasma etching process to expose a top surface of the pattern, open a portion of the material layer at a bottom region between adjacent features of the pattern, and retain a remaining portion of the material layer on sidewalls of the pattern; and removing the pattern using one or more etching processes to leave a final pattern comprising the remaining portion of the material layer and the second layer.