Patents by Inventor Kosuke Ohsima

Kosuke Ohsima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diode device and transistor device
    Patent number: 7135718
    Abstract: A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the outermost one reaches these relay diffusion layers, and then the outer guard ring portions. The width of the distance between the guard ring portions is shorter where the relay diffusion layers are provided. For the width of the relay diffusion layers, the depletion layer reaches the outer guard ring portions with a lower voltage than the conventional structure.
    Type: Grant
    Filed: February 20, 2003
    Date of Patent: November 14, 2006
    Assignee: Shindengen Electric Manufacturing Co., Ltd.
    Inventors: Mizue Kitada, Kosuke Ohsima, Shinji Kunori, Toru Kurosaki
  • Diode element
    Patent number: 6768138
    Abstract: The invention relates to technology improving the withstand voltage of a Schottky diode. With a diode of the present invention, the distance a between the long sides of the narrow groove withstand voltage portions and the inner ring circumference of the intermediate withstand voltage portion is set to twice the distance b between the short sides of the narrow groove withstand voltage portions and the inner ring circumference of the intermediate withstand voltage portion. Furthermore, the distance c between the inner ring circumference of the innermost outer withstand voltage portions and the outer ring circumference of the intermediate withstand voltage portion, the distance u between the adjacent outer withstand voltage portions, and the distance d between the adjacent narrow groove withstand voltage portions are all equal to the distance a.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: July 27, 2004
    Assignee: Shindengen Electric Manufacturing Co., Ltd.
    Inventors: Mizue Kitada, Kosuke Ohsima, Shinji Kunori
  • Diode device and transistor device
    Publication number: 20030160262
    Abstract: A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a depletion layer expanded outward from the guard ring portions except the outermost one reaches these relay diffusion layers, and then the outer guard ring portions. The width of the distance between the guard ring portions is shorter where the relay diffusion layers are provided. For the width of the relay diffusion layers, the depletion layer reaches the outer guard ring portions with a lower voltage than the conventional structure.
    Type: Application
    Filed: February 20, 2003
    Publication date: August 28, 2003
    Inventors: Mizue Kitada, Kosuke Ohsima, Shinji Kunori, Toru Kurosaki