Abstract: Disclosed is a rotation/revolution type vapor phase growth apparatus capable of increasing the area of a semiconductor thin film that can be vapor-phase grown at a time, without upsizing a susceptor or the like. The vapor phase growth apparatus is a horizontal vapor phase growth apparatus having a rotation/revolution mechanism and includes a bearing member 13 provided in a circular opening formed on a disk-shaped susceptor 12, a soaking plate 14 mounted rotatably on the bearing member, an external gear member 15 mounted on the soaking plate, a ring-shaped fixed internal gear member 17 including an internal gear engaged with the external gear member, a heating unit 19 for heating a substrate 18 retained on the external gear member from a backside of the susceptor, and a flow channel 20 for guiding a raw material gas in a direction parallel to a surface of the substrate.

Abstract: A screw type processing device provides a film-formable thermoplastic composition formed mainly of polysaccharide and protein by continuously compressing substances together with carbon dioxide gas to form fluid in a critical state, processes the fluid and is capable of efficiently manufacturing a practicable polyester foam body. A pressure reduction part with increased space volume between screw vanes is formed continuously with an extruding screw of a material supply part by reducing the diameter of the shaft of the screw, and carbon dioxide gas is led into the pressure reduction part. Also, a compression part formed of a screw having a shaft with increased diameter and narrowed vanes is positioned after the pressure reduction part. The diameter of the shaft is made substantially equal to the inner periphery of a barrel, and an orifice part having an orifice formed on the surface or periphery of the shaft is formed.