Abstract: To provide a semiconductor light-emitting device with a multilayer film hardly peeled therefrom and a production method therefor. The light-emitting device has an uneven substrate having an uneven shape on a first surface, a first conduction type first semiconductor layer on the uneven shape of the uneven substrate, a light-emitting layer on the first semiconductor layer, a second conduction type second semiconductor layer on the light-emitting layer, and a third DBR covering at least a part of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer. The light-emitting device is of a flip-chip type. In the periphery of the uneven substrate, the uneven shape has an exposed portion exposed without being covered by the first semiconductor layer. The third DBR covers at least a part of the exposed portion of the uneven shape.

Abstract: To provide a semiconductor light-emitting device with a multilayer film hardly peeled therefrom and a production method therefor. The light-emitting device has an uneven substrate having an uneven shape on a first surface, a first conduction type first semiconductor layer on the uneven shape of the uneven substrate, a light-emitting layer on the first semiconductor layer, a second conduction type second semiconductor layer on the light-emitting layer, and a third DBR covering at least a part of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer. The light-emitting device is of a flip-chip type. In the periphery of the uneven substrate, the uneven shape has an exposed portion exposed without being covered by the first semiconductor layer. The third DBR covers at least a part of the exposed portion of the uneven shape.

Abstract: The present invention provides a light-emitting part and a light-emitting apparatus exhibiting high brightness per unit area, and simplified production methods therefor. The light-emitting unit comprises a single base substrate, and a plurality of light-emitting devices thereon. The light-emitting unit includes a serial connection body which connects at least a part of the light-emitting devices in series. The serial connection body comprises light-emitting devices which make a current path, a light-emitting device which does not make a current path, and a connection member which electrically connects an n-electrode and a p-electrode of the light-emitting devices.

Abstract: There is provided a Group III nitride semiconductor light-emitting device with a large light emission amount when a substrate has a rectangular shape. The light-emitting device comprises a rectangular substrate having a first long side, a second long side, a first short side, and a second short side; an n-type contact layer on the substrate; a plurality of n-dot electrodes ND on the n-type contact layer; a first line having a part of the n-dot electrodes ND arranged along the first long side; and a second line having a remaining part of the n-dot electrodes ND arranged along the second long side. A plurality of n-dot electrodes ND belong to either the first line or the second line. The n-dot electrodes ND belonging to the first line and the n-dot electrodes ND belonging to the second line are alternately arranged so as not to oppose each other.

Abstract: The present invention provides a light-emitting part and a light-emitting apparatus exhibiting high brightness per unit area, and simplified production methods therefor. The light-emitting unit comprises a single base substrate, and a plurality of light-emitting devices thereon. The light-emitting unit includes a serial connection body which connects at least a part of the light-emitting devices in series. The serial connection body comprises light-emitting devices which make a current path, a light-emitting device which does not make a current path, and a connection member which electrically connects an n-electrode and a p-electrode of the light-emitting devices.

Abstract: A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern.

Abstract: A semiconductor light-emitting element includes a semiconductor laminated structure including a light-emitting layer sandwiched between first and second conductivity type layers for extracting an emitted light from the light-emitting layer on a side of the second conductivity type layer, a transparent electrode in ohmic contact with the second conductivity type layer, an insulation layer formed on the transparent electrode, an upper electrode for wire bonding formed on the insulation layer, a lower electrode that penetrates the insulation layer, is in ohmic contact with the transparent electrode and the electrode for wire bonding, and has an area smaller than that of the upper electrode in top view, and a reflective portion for reflecting at least a portion of light transmitted through a region of the transparent electrode not in contact with the lower electrode.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern.

Abstract: A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.

Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a

Abstract: In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a light transmission electrode 15 made of an ITO is formed over the entire surface of an upper surface of a p layer 13 and twenty pad electrodes 16 are formed at prescribed intervals on the light transmission electrode 15. The plane form of the pad electrode 16 has four branches 16b protruding in the form of a cross from a circular central part 16a and the adjacent pad electrodes 16 connected to each other by the branches 16b.

Abstract: A light emitting element includes a first electrode, a second electrode formed on a same side as the first electrode and including an area less than the first electrode, a first bump formed on the first electrode, and a second bump formed on the second electrode and including a level at a top thereof higher than that of the first bump. A flip-chip type light emitting element includes a spreading electrode, the spreading electrode including an extended part, and plural intermediate electrodes formed on the spreading electrode and arranged in a longitudinal direction of the extended part and centrally in a width direction of the extended part. The intermediate electrodes are disposed such that a distance of half a pitch thereof in the longitudinal direction is equal to or shorter than a distance from one of the intermediate electrodes to an edge of the extended part.

Abstract: A semiconductor light-emitting element includes a semiconductor laminated structure including a light-emitting layer sandwiched between first and second conductivity type layers for extracting an emitted light from the light-emitting layer on a side of the second conductivity type layer, a transparent electrode in ohmic contact with the second conductivity type layer, an insulation layer formed on the transparent electrode, an upper electrode for wire bonding formed on the insulation layer, a lower electrode that penetrates the insulation layer, is in ohmic contact with the transparent electrode and the electrode for wire bonding, and has an area smaller than that of the upper electrode in top view, and a reflective portion for reflecting at least a portion of light transmitted through a region of the transparent electrode not in contact with the lower electrode.

Abstract: A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a

Abstract: A semiconductor light emitting element has an electrode formed on a semiconductor layer, a passivation film covering a part of a top surface of the electrode, and a multilayer film formed on the electrode. The multilayer film has at least one pair of a Ti layer and a Ni layer, the Ti layer and the Ni layer being stacked alternately in the multilayer film.

Abstract: A light emitting element includes a first electrode, a second electrode formed on a same side as the first electrode and including an area less than the first electrode, a first bump formed on the first electrode, and a second bump formed on the second electrode and including a level at a top thereof higher than that of the first bump. A flip-chip type light emitting element includes a spreading electrode, the spreading electrode including an extended part, and plural intermediate electrodes formed on the spreading electrode and arranged in a longitudinal direction of the extended part and centrally in a width direction of the extended part. The intermediate electrodes are disposed such that a distance of half a pitch thereof in the longitudinal direction is equal to or shorter than a distance from one of the intermediate electrodes to an edge of the extended part.

Abstract: In a flip chip type light-emitting element of the present invention, an n type contact electrode 14 is formed on an n layer 11 exposed in a comb-tooth shape, a light transmission electrode 15 made of an ITO is formed over the entire surface of an upper surface of a p layer 13 and twenty pad electrodes 16 are formed at prescribed intervals on the light transmission electrode 15. The plane form of the pad electrode 16 has four branches 16b protruding in the form of a cross from a circular central part 16a and the adjacent pad electrodes 16 connected to each other by the branches 16b.

Abstract: A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive film 10 made of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection film 20, a reflection film 30 which is made of silver (Ag) and aluminum (Al) and reflects light to a sapphire substrate side, and a metal layer 40 made of gold (Au) are deposited in sequence. Because the insulation protection film 20 exists between the transparent conductive film 10 and the reflection film 30, metal atoms comprised in the reflection film 30 can be prevented from diffusing in the transparent conductive film 10. That enables the transparent conductive film 10 to maintain high transmissivity. As a result, a light-emitting device having high external quantum efficienty can be provided.

Abstract: A semiconductor light emitting element has an electrode formed on a semiconductor layer, a passivation film covering a part of a top surface of the electrode, and a multilayer film formed on the electrode. The multilayer film has at least one pair of a Ti layer and a Ni layer, the Ti layer and the Ni layer being stacked alternately in the multilayer film.