Abstract: There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu2O, CuO and Cu(OH)2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH)2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu2O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.

Abstract: There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (?m/?m2) or more and 1.6 (?m/?m2) or less.

Abstract: The present invention provides a method of manufacturing by the sublimation-recrystallization method more accurately detecting a thermal state of a starting material in a crucible and enabling control of the growth conditions while manufacturing an SiC single crystal.

Abstract: Provided is a SiC single crystal wafer, which is manufactured from a SiC single crystal ingot grown by the sublimation-recrystallization method, and which brings about high device performance and high device manufacture yield when used as a wafer for manufacturing a device. The SiC single crystal wafer has, in a surface thereof, a basal plane dislocation density of 1,000 dislocations per cm2 or less, a threading screw dislocation density of 500 dislocations per cm2 or less, and a Raman index of 0.2 or less. Further provided is a method of manufacturing a SiC single crystal ingot, including controlling heat input from a side surface of the single crystal ingot during growth of a single crystal, to thereby grow the crystal while changes in the temperature distribution of the single crystal ingot are reduced.

Abstract: The present invention provides a method of manufacturing by the sublimation-recrystallization method more accurately detecting a thermal state of a starting material in a crucible and enabling control of the growth conditions while manufacturing an SiC single crystal.

Abstract: Provided are a method of evaluating an internal stress of a silicon carbide (SiC) single crystal wafer and a method of predicting warpage of the SiC single crystal wafer after completion of polishing by evaluating the internal stress of the wafer. Wavenumber shift amounts of Raman-scattered light are measured at two points within a surface of the SiC single crystal wafer, and the internal stress is evaluated through use of a difference between the wavenumber shift amounts. Also provided is a method of predicting warpage of a silicon carbide single crystal wafer in advance, the silicon carbide single crystal wafer being produced by sublimation-recrystallization method, the method including predicting warpage of a SiC single crystal wafer through use of the evaluation indicator.

Abstract: Provided are a method of evaluating an internal stress of a silicon carbide (SiC) single crystal wafer and a method of predicting warpage of the SiC single crystal wafer after completion of polishing by evaluating the internal stress of the wafer. Wavenumber shift amounts of Raman-scattered light are measured at two points within a surface of the SiC single crystal wafer, and the internal stress is evaluated through use of a difference between the wavenumber shift amounts. Also provided is a method of predicting warpage of a silicon carbide single crystal wafer in advance, the silicon carbide single crystal wafer being produced by sublimation-recrystallization method, the method including predicting warpage of a SiC single crystal wafer through use of the evaluation indicator.

Abstract: Provided is a SiC single crystal wafer, which is manufactured from a SiC single crystal ingot grown by the sublimation-recrystallization method, and which brings about high device performance and high device manufacture yield when used as a wafer for manufacturing a device. The SiC single crystal wafer has, in a surface thereof, a basal plane dislocation density of 1,000 dislocations per cm2 or less, a threading screw dislocation density of 500 dislocations per cm2 or less, and a Raman index of 0.2 or less. Further provided is a method of manufacturing a SiC single crystal ingot, including controlling heat input from a side surface of the single crystal ingot during growth of a single crystal, to thereby grow the crystal while changes in the temperature distribution of the single crystal ingot are reduced.