Abstract: A cell mass-forming member that is capable of easily forming a cell mass and superior in industrial mass productivity; a culture container equipped with the cell mass-forming member; a method for producing cultured cells using the cell mass-forming member; and cultured cells with a cell mass-forming member that are equipped with the cell mass-forming member. The cell mass-forming member has a base material, an adhesion inhibition area and a cell adhesion area are formed on the surface of the base material; a micro-concavo-convex structure area including a plurality of convex portions is formed in the cell adhesion area; and a hydrophilic coating layer is formed on both the adhesion inhibition area and the cell adhesion area. The culture container and the cultured cells with a cell mass-forming member are equipped with the cell mass-forming member. The method for producing cultured cells includes using the cell mass-forming member.

Abstract: An analytical substrate including a substrate of which at least a first surface includes a dielectric or a semiconductor, and a metal film on the first surface of the substrate, and which includes protruding portions and protruding portions, in which the height of apex portions of the protruding portions is the height of a peak that is the greatest distance from the substrate in the surface height distribution of the metal film; the height of apex portions of the protruding portions is the height of a peak that is the next greatest distance from the substrate in the surface height distribution of the metal film; and the average value of the width of the protruding portions excluding groove regions, in which the height of the peak is the smallest distance from the substrate is at most equal to 200 nm.

Abstract: An antireflective structure having multiple light absorbing units each of which has a bottomed cylindrical shape, the light absorbing unit includes a bottom portion including an outer edge portion having a substantially circular shape, and a wall portion rising along the outer edge portion, and an upper side of the bottom portion is an opening portion, the average height of the wall portions being greater than or equal to 5 ?m and smaller than or equal to 100 ?m, an average opening diameter of the opening portions being greater than or equal to 1 ?m and smaller than or equal to 10 ?m, and a pinching structure configured with minute projections that stand in a group with an average pitch greater than or equal to 10 nm and smaller than or equal to 500 nm is formed on the bottom portion.

Abstract: An analysis substrate including a substrate having at least a first surface made of a dielectric or a semiconductor, and a metal film provided on the first surface of the substrate, wherein the metal film has multiple non-deposition areas which are provided as an island-like gap shape having a length of 1 ?m or less in a long axis direction in the metal film and in which there is no metal and the first surface is exposed, wherein the sheet resistance of a surface of the metal film at 25° C. is 3 to 5,000?/?.

Abstract: An antireflective structure having multiple light absorbing units each of which has a bottomed cylindrical shape, the light absorbing unit includes a bottom portion including an outer edge portion having a substantially circular shape, and a wall portion rising along the outer edge portion, and an upper side of the bottom portion is an opening portion, the average height of the wall portions being greater than or equal to 5 ?m and smaller than or equal to 100 ?m, an average opening diameter of the opening portions being greater than or equal to 1 ?m and smaller than or equal to 10 ?m, and a pinching structure configured with minute projections that stand in a group with an average pitch greater than or equal to 10 nm and smaller than or equal to 500 nm is formed on the bottom portion.

Abstract: The semiconductor light-emitting element substrate is provided with: a reference surface which includes a flat surface parallel to a crystal plane of the material of the semiconductor light-emitting element substrate; and a plurality of protrusions which protrude from the reference surface, the protrusions being arranged on a two-dimensional lattice along the crystal plane and including a flat surface parallel with the crystal plane as a distal face. In a plane including the reference surface, mutually adjacent protrusions have a pitch P of not less than 100 nm and not more than 5.0 ?m, wherein 0.76?S1/S2?7.42 is satisfied, where S1 is a first area which is the total area of the distal faces per unit area as viewed in plan opposing the reference surface, and S2 is a second area which is the total area of the reference surface per unit area.

Abstract: An optical element including, on a substrate, an anti-reflection layer on multiple small concave protrusions, which have a modal pitch less than or equal to a wavelength of light in an environment where the optical element is to be used, are formed; in which 80% or more of the concave protrusions include one or more steps, and satisfy the following conditions: 0.12d?ws?0.17d and 0.42h?zs?0.52h, in which d is a diameter of the concave protrusions, h is a depth of the concave protrusions, ws is a total width of the steps in any cut surface; and zs is an average depth of the steps.

Abstract: A mold for manufacturing an optical element is provided with a base material, and a recessing and protruding layer formed on a surface of the base material. The recessing and protruding structure of the recessing and protruding layer having a plurality of areas continuously arranged in a positional relationship in which the central point of seven adjacent protrusions is an intersection point of diagonal lines of six vertices of a regular hexagon, and the areas, shapes, and crystal orientations of the plurality of areas are random.

Abstract: An upper surface of a substrate is etched using a first single-particle film as a mask. The first single-particle film is constituted of first particles having a first particle diameter. The upper surface of the substrate is etched using a second single-particle film as a mask. The second single-particle film is constituted of second particles having a second particle diameter. The second particle diameter is different from the first particle diameter.

Abstract: A method of manufacturing a semiconductor light emitting device, the method including arranging multiple particles M in a monolayer on a substrate S, dry etching the multiple particles M arranged to provide a void between the particles M in a condition by which the particles M are etched while the substrate S is not substantially etched; and dry etching the substrate S by using the multiple particles M1 after the particle etching as an etching mask, thereby forming an uneven structure on one surface X the substrate S.

Abstract: A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.

Abstract: An optical element including, on a substrate, an anti-reflection layer on multiple small concave protrusions, which have a modal pitch less than or equal to a wavelength of light in an environment where the optical element is to be used, are formed; in which 80% or more of the concave protrusions include one or more steps, and satisfy the following conditions: 0.12d?ws?0.17d and 0.42h?zs?0.52h, in which d is a diameter of the concave protrusions, h is a depth of the concave protrusions, ws is a total width of the steps in any cut surface; and zs is an average depth of the steps.

Abstract: A semiconductor light emitting device substrate including an uneven structure on one surface, the uneven structure including numerous convex portions and a flat surface between the convex portions, and multiple areas in which the central portions of seven adjacent convex portions are continuously and positionally aligned to become six vertices and intersection points of diagonal lines of a regular hexagon, and the area, shape and lattice orientation of the plurality of areas are random. A semiconductor light emitting device including the semiconductor light emitting device substrate; and a semiconductor functional layer laminated on the semiconductor light emitting device substrate.

Abstract: An upper surface of a substrate is etched using a first single-particle film as a mask. The first single-particle film is constituted of first particles having a first particle diameter. The upper surface of the substrate is etched using a second single-particle film as a mask. The second single-particle film is constituted of second particles having a second particle diameter. The second particle diameter is different from the first particle diameter.

Abstract: A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.

Abstract: A mold for manufacturing an optical element is provided with a base material, and a recessing and protruding layer formed on a surface of the base material. The recessing and protruding structure of the recessing and protruding layer having a plurality of areas continuously arranged in a positional relationship in which the central point of seven adjacent protrusions is an intersection point of diagonal lines of six vertices of a regular hexagon, and the areas, shapes, and crystal orientations of the plurality of areas are random.

Abstract: A method of manufacturing a semiconductor light emitting device, the method including: a particle arranging step for arranging a plurality of particles M in a monolayer on a substrate S, a particle etching step for dry etching the plurality of particles M arranged to provide a void between the particles M in a condition by which the particles M are etched while the substrate S is not etched substantially; and a substrate etching step for dry etching the substrate S by using the plurality of particles M1 after the particle etching step as an etching mask, thereby forming an uneven structure on one surface X the substrate S.