Abstract: A control device is configured to perform: performing a first process when an index value indicating a degree of closeness to a risky object which is present in front of a mobile object is less than a first threshold value; performing a second process when the index value is equal to or greater than the first threshold value and less than a second threshold value greater than the first threshold value; and performing a third process and the second process when the index value is equal to or greater than the second threshold value. The third process includes a fourth process of proposing a driving operation for avoiding the risky object to a driver. The fourth process is not performed when the driver has performed an action for reducing or releasing an operation of an operator instructing an accelerating operation for accelerating the mobile object.

Abstract: A control device of an embodiment is a control device that makes a proposal for steering to avoid a risk object present on a traveling direction side of a mobile object to a driver of the mobile object and includes a determiner configured to determine, when it is assumed that the mobile object is caused to travel straight from a current position of the mobile object in a current traveling direction for a predetermined time, whether an assumed reference position of the mobile object intersects a traveling road boundary, and a proposer configured to suppress the proposal when it is determined that the reference position intersects the traveling road boundary, and makes the proposal when it is determined that the reference position does not intersect the traveling road boundary.

Abstract: The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).

Abstract: The invention provides a vacuum processing chamber comprising a particle removing function and capable of improving the yield and process efficiency for processing samples.

Abstract: To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).

Abstract: The present invention provides a method for measuring SARS virus nucleocapsid protein (SARS-NP) using first and second antibodies both binding specifically to SARS-NP, wherein the first or second antibody is an antibody recognizing an epitope located in a region (Region C) of amino acid 283 to 422 from the N-terminus of the amino acid sequence of SARS-NP.

Abstract: The invention provides a pretreatment liquid for preparing a sample for measuring a virus included in rhinorrhea or sputum by an immunoassay method using an antibody specifically binding to the virus, comprising a protease inhibitor for inhibiting an influence of a protease to the virus, as well as a virus measurement kit and a virus detection method using the specimen pretreatment liquid.

Abstract: The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al2O3 film to be used for a magnetic head, capable of realizing high selectivity. In the etching of a wafer having disposed on an NiCr film 15 an Al2O3 film 14, an Ru film 13, an SiO2 film 12 and a resist mask 11, the Ru film 13 is etched via plasma using a processing gas containing Cl2 and O2 (FIG. 1(c)), and thereafter, the Ru film 13 is used as a mask to etch the Al2O3 film 14 via plasma using a gas mixture mainly containing BCl3 and also containing Cl2 and Ar (FIG. 1(d)).

Abstract: The invention provides a vacuum processing chamber comprising a particle removing function and capable of improving the yield and process efficiency for processing samples.

Abstract: The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against an organic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.

Abstract: To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. Each time one workpiece with a metal film is etched (S1), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S2), performing a first step of plasma processing using oxygen (O2) and carbon tetrafluoride (CF4) to remove a carbon-based deposit pile (S3), and performing a second step of plasma processing using boron trichloride (BCl3) and chlorine (Cl2) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S4).

Abstract: The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against anorganic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.

Abstract: A thermal transfer recording medium comprising a support, and at least a heat-meltable release layer and a colored ink layer capable of being softened with heat stacked in this order on the support, the release layer comprising a wax as a main ingredient, and the release layer having a melting point of not less than 85° C., a heat of fusion of not more than 140 mJ/mg, and a melt viscosity of not more than 50 cps/120° C.

Abstract: Disclosed is a method of dry-etching a sample (e.g., a wafer) having an aluminum system film structure to be etched. Etching is performed in a plasma, under reduced pressure, the plasma being formed from a gas mixture containing a halogen system gas (e.g., Cl.sub.2, HBr, BCl.sub.3, etc.) and a ROH gas (e.g., CH.sub.3 OH, C.sub.3 H.sub.5 OH, C.sub.5 H.sub.7 OH, CH.sub.3 COOH, HOCH.sub.2 CH.sub.2 OH, etc.). By incorporating the ROH gas with the halogen system gas, in etching, e.g., an aluminum system film structure, etching can be performed with an accurate shape corresponding to a mask pattern, irrespective of the pattern density. Moreover, the aluminum system film structure can be etched at a uniform speed irrespective of the pattern density; and a selection ratio for etching the aluminum system film structure, as compared with etching material (e.g., organic resist) of the mask, is improved.

Abstract: A sample treating method and apparatus adapted to treat a sample such as a semiconductor element substrate or the like and, particularly, a sample that must be etched and anticorrosion-treated. The adhered matters formed by the etching of the sample are removed from the sample sufficiently and easily when the etched sample is treated by utilizing the plasma of an anticorrosion gas that is capable of removing the adhered matters. There is required no wet-type anticorrosion treatment enabling the throughput to be improved in treating the samples that must be etched and anticorrosion-treated.