Abstract: An optical sensor includes a support and a thermoelectric-conversion material section including first material layers, second material layers, and a third material layer. Each of the first material layers may have a first region including a first end portion and a second region including a second end portion. Each of the second material layers may have a third region including a third end portion and a fourth region including a fourth end portion. The first region and the second region are electrically connected to the third region and the fourth region, respectively, such that the plurality of first material layers and the plurality of second material layers are alternately connected in series to each other. The third material layer is disposed between the first region and the third region.

Abstract: A thermoelectric conversion material includes, a base material composed of SiGe, a first additive element functioning as a dopant, a second additive element different from the first additive element, and oxygen. The second additive element includes at least one of Mg, Ca, and Ti. A content ratio of the second additive element relative to the base material is 0.5 at % to 5 at %. In a rectangular area of a section of the base material, the rectangular area being selected such that a grain boundary intersects opposite sides of the rectangular area, a distribution of the second additive element and the oxygen has a positive correlation. A correlation coefficient of the correlation is in a range of 0.2 or more and less than 1.0.

Abstract: An optical sensor includes a support film having a first main surface and a second main surface located opposite to the first main surface in a thickness direction; a thermoelectric-conversion material section disposed on the first main surface and including a plurality of strip-shaped first material layers formed of SiGe having p-type conductivity and configured to convert thermal energy into electric energy, and a plurality of strip-shaped second material layers formed of SiGe having n-type conductivity and configured to convert thermal energy into electric energy; a heat sink disposed on the second main surface; and a light absorbing film disposed so as to form a temperature difference in each of the first material layers in longitudinal directions and each of the second material layers in longitudinal directions and configured to convert received light into thermal energy.

Abstract: An optical sensor includes a support layer, a thermoelectric-conversion material section disposed on the support layer and including strip-shaped p-type material layers configured to convert thermal energy into electric energy and strip-shaped n-type material lavers configured to convert thermal energy into electric energy, a heat sink, a light absorbing film, and an insulating film disposed between the thermoelectric-conversion material section and the light absorbing film. Each of the p-type material layers includes a first region overlapping the heat sink and a second region overlapping the light absorbing film. Each of the n-type material layers includes a third region overlapping the heat sink and a fourth region overlapping the light absorbing film. The p-type material layers and the n-type material layers are alternately disposed in series. The light absorbing film includes 60 mass % to 95 mass % of carbon and 5 mass % to 40 mass % of a resin.

Abstract: An information processing apparatus configured to determine a tour schedule around a facility, the information processing apparatus includes a controller configured to determine a tour time at a tour spot in the tour schedule, based on biological information on a user who is observing a process performed by equipment at the tour spot in the facility.

Abstract: An information processing apparatus includes a controller configured to manage operation of a vehicle traveling in a facility. The controller is configured to determine a tour schedule to allow users touring the facility to be on board the vehicle so that a visible range to the users is limited based on an attribute of the users, and control the vehicle based on the tour schedule.

Abstract: An information processing apparatus configured to determine a travel route for a vehicle traveling in a facility, the information processing apparatus includes a controller configured to determine the travel route for the vehicle based on operation information on disaster prevention equipment installed in the facility and/or first image information including an image of a passageway in the facility, the image being captured by an imaging apparatus installed in the facility, and vehicle position information indicating a position of the vehicle, and a communication interface configured to transmit, to the vehicle, travel route information indicating the travel route.

Abstract: An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 ?m or more.

Abstract: An information processing apparatus includes a controller configured to manage operation of a vehicle traveling in a facility. The controller is configured to generate a transportation schedule to cause the vehicle to transport components to be used in the facility and a tour schedule to allow users touring the facility to be on board the vehicle. The controller is configured to run the vehicle based on the transportation schedule and the tour schedule.

Abstract: A task management device includes a control unit that executes, when satisfaction of a specific condition is detected during a period in which a vehicle to be operated in a mode corresponding to an application is operated in a first mode, operation start control to start an operation of the vehicle in a second mode that is different from the first mode before a schedule end time of the period.

Abstract: A task management device includes a control unit that detects a deterioration of an internal environment of a vehicle as an environmental deterioration during a period in which the vehicle to be operated in a mode in accordance with an application is operated in a first mode, calculates a time required for maintenance of the internal environment of the vehicle in accordance with the detected environmental deterioration and determines whether the maintenance is completed by a mode switching time limit for switching the mode of the vehicle to a second mode that is different from the first mode, and executes operational control in accordance with a determination result obtained.

Abstract: A task management device includes a control unit that calculates a required time for maintenance of an internal environment of at least one vehicle to be operated in a mode corresponding to an application before the mode of the at least one vehicle is switched from a first mode to a second mode based on information acquired from any one of a first target to be transported by the at least one vehicle in the first mode and a second target to be transported by the at least one vehicle in the second mode that is different from the first mode, and adjusts a dispatch schedule of the at least one vehicle in accordance with the required time calculated.

Abstract: A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

Abstract: The task management device includes a control unit that performs maintenance start control for starting maintenance of the internal environment of the vehicle during a period in which the vehicle operated in the mode corresponding to the application is operated in the first mode, and performs mode switching control for switching the vehicle to the second mode different from the first mode after the maintenance is completed.

Abstract: A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.

Abstract: A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.

Abstract: An optical sensor includes a support film, a thermoelectric conversion material portion, a heat sink, a light absorption film, a first electrode, and a second electrode. The thermoelectric conversion material portion includes a plurality of first material layers and a plurality of second material layers. The support film includes a first layer arranged on the heat sink side in a thickness direction and configured with a phononic structure having a large number of holes, and an insulating second layer arranged on the first layer and in contact with the thermoelectric conversion material portion.

Abstract: A tire repairing apparatus includes: a tire support portion rotatably supporting a pneumatic tire; and an application mechanism configured to apply an additive that has a softening effect, to a tread portion of the pneumatic tire supported by the tire support portion, thereby causing the additive to permeate into the tread portion

Abstract: A thermoelectric conversion material is constituted of a semiconductor that contains a constituent element and an additive element having a difference of 1 in the number of electrons in an outermost shell from the constituent element, the additive element having a concentration of not less than 0.01 at % and not more than 30 at %. The semiconductor has a microstructure including an amorphous phase and a granular crystal phase dispersed in the amorphous phase. The amorphous phase includes a first region in which the concentration of the additive element is a first concentration, and a second region in which the concentration of the additive element is a second concentration lower than the first concentration. The first concentration and the second concentration have a difference of not less than 15 at % and not more than 25 at % therebetween.

Abstract: A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex, where x has a value of greater than 0.01 and smaller than 0.6.