Patents by Inventor Kotaro Horikoshi
Kotaro Horikoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10332795Abstract: It is to provide a manufacturing method of a semiconductor device including the following steps of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.Type: GrantFiled: August 7, 2017Date of Patent: June 25, 2019Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Kiyoshi Maeshima, Kotaro Horikoshi, Katsuhiko Hotta, Toshiyuki Takahashi, Hironori Ochi, Kenichi Shoji
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Patent number: 10224214Abstract: In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF4 gas and C3H2F4 gas as its components.Type: GrantFiled: October 21, 2017Date of Patent: March 5, 2019Assignee: Renesas Electronics CorporationInventors: Kotaro Horikoshi, Toshikazu Hanawa, Masatoshi Akaishi, Yuji Kikuchi
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Patent number: 10056235Abstract: A manufacturing method of a semiconductor device includes the steps of: (a) placing a semiconductor wafer over a stage provided in a chamber, the pressure in the inside of which is reduced by vacuum pumping; and (b) after the step (a), forming plasma in the chamber in a state where the semiconductor wafer is adsorbed and held by the stage, so that desired etching processing is performed on the semiconductor wafer. Herein, before the step (a), O2 gas, negative gas having an electronegativity higher than that of nitrogen gas, is introduced into the chamber to form O2 plasma in the chamber, thereby allowing the charges remaining over the stage to be eliminated.Type: GrantFiled: April 26, 2017Date of Patent: August 21, 2018Assignee: RENESAS ELECTRONICS CORPORATIONInventor: Kotaro Horikoshi
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Publication number: 20180202945Abstract: A semiconductor manufacturing apparatus includes: an electrostatic chuck that is installed in a chamber and over which a semiconductor wafer to be subjected to plasma processing is to be mounted; and an observation device for observing a change in a signal waveform occurring in the electrostatic chuck during the plasma processing. The observation device determines abnormal discharge in a processing chamber based on a change pattern of the signal waveform.Type: ApplicationFiled: December 12, 2017Publication date: July 19, 2018Inventors: Naoto KANZAKI, Kotaro Horikoshi, Toru Shinaki
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Publication number: 20180047579Abstract: In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF4 gas and C3H2F4 gas as its components.Type: ApplicationFiled: October 21, 2017Publication date: February 15, 2018Inventors: Kotaro HORIKOSHI, Toshikazu HANAWA, Masatoshi AKAISHI, Yuji KIKUCHI
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Publication number: 20170372876Abstract: A manufacturing method of a semiconductor device includes the steps of: (a) placing a semiconductor wafer over a stage provided in a chamber, the pressure in the inside of which is reduced by vacuum pumping; and (b) after the step (a), forming plasma in the chamber in a state where the semiconductor wafer is adsorbed and held by the stage, so that desired etching processing is performed on the semiconductor wafer. Herein, before the step (a), O2 gas, negative gas having an electronegativity higher than that of nitrogen gas, is introduced into the chamber to form O2 plasma in the chamber, thereby allowing the charges remaining over the stage to be eliminated.Type: ApplicationFiled: April 26, 2017Publication date: December 28, 2017Inventor: Kotaro HORIKOSHI
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Publication number: 20170358489Abstract: It is to provide a manufacturing method of a semiconductor device including the following steps of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.Type: ApplicationFiled: August 7, 2017Publication date: December 14, 2017Inventors: Kiyoshi MAESHIMA, Kotaro HORIKOSHI, Katsuhiko HOTTA, Toshiyuki TAKAHASHI, Hironori OCHI, Kenichi SHOJI
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Patent number: 9818620Abstract: In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF4 gas and C3H2F4 gas as its components.Type: GrantFiled: September 16, 2016Date of Patent: November 14, 2017Assignee: Renesas Electronics CorporationInventors: Kotaro Horikoshi, Toshikazu Hanawa, Masatoshi Akaishi, Yuji Kikuchi
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Patent number: 9761487Abstract: It is to provide a manufacturing method of a semiconductor device including the following step of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.Type: GrantFiled: May 5, 2016Date of Patent: September 12, 2017Assignee: RENESAS ELECTRONICS CORPORATIONInventors: Kiyoshi Maeshima, Kotaro Horikoshi, Katsuhiko Hotta, Toshiyuki Takahashi, Hironori Ochi, Kenichi Shoji
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Patent number: 9666445Abstract: In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF4 gas and C3H2F4 gas as its components.Type: GrantFiled: January 25, 2016Date of Patent: May 30, 2017Assignee: Renesas Electronics CorporationInventors: Kotaro Horikoshi, Toshikazu Hanawa, Masatoshi Akaishi, Yuji Kikuchi
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Publication number: 20170062250Abstract: An asking apparatus includes a load-lock chamber and an apparatus control unit. The load-lock chamber takes in or out a semiconductor wafer to or from a process chamber in which a vacuum process of the semiconductor wafer is performed. The apparatus control unit controls a venting process for putting the load-lock chamber in a vacuum state to an atmospheric state in which the load-lock chamber is opened to atmosphere. Also, the apparatus control unit compares ?1 kPa that is a pressure value previously set and a differential pressure value obtained by subtracting a second pressure value that is a pressure inside the load-lock chamber right after venting to the atmosphere from a first pressure value that is a pressure inside the load-lock chamber right before venting. The apparatus control unit outputs an alarm when the differential pressure value is lower than ?1 kPa that is a pressure value previously set.Type: ApplicationFiled: July 27, 2016Publication date: March 2, 2017Inventors: Katsuyoshi KOGURE, Kotaro HORIKOSHI, Kaichiro KOBAYASHI, Kazuyuki OZEKI
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Patent number: 9559141Abstract: Hydrogen plasma processing is performed on a semiconductor wafer having a wiring formed in a region except a photodiode formation region of a pixel part and in a peripheral circuit part, from the side of a face where the wiring is formed. The hydrogen plasma processing uses a plasma etching apparatus which applies high-frequency power to an upper electrode for exciting hydrogen plasma and applies high-frequency power to a lower electrode for supplying hydrogen ions existing in the hydrogen plasma to the semiconductor wafer by electric field drift. Thereby, in the photodiode formation region of the pixel part, hydrogen ions become likely to be supplied by the electric field drift, and, in the region except the photodiode formation region and in the peripheral circuit part, the wiring restricts the movement of hydrogen ions and hydrogen ions become difficult to be supplied.Type: GrantFiled: August 18, 2015Date of Patent: January 31, 2017Assignee: Renesas Electronics CorporationInventors: Kotaro Horikoshi, Tatsunori Murata
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Publication number: 20170004976Abstract: In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF4 gas and C3H2F4 gas as its components.Type: ApplicationFiled: September 16, 2016Publication date: January 5, 2017Inventors: Kotaro HORIKOSHI, Toshikazu HANAWA, Masatoshi AKAISHI, Yuji KIKUCHI
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Publication number: 20160365278Abstract: It is to provide a manufacturing method of a semiconductor device including the following step of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 ?g/m3 and less.Type: ApplicationFiled: May 5, 2016Publication date: December 15, 2016Inventors: Kiyoshi MAESHIMA, Kotaro HORIKOSHI, Katsuhiko HOTTA, Toshiyuki TAKAHASHI, Hironori OCHI, Kenichi SHOJI
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Publication number: 20160276211Abstract: In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF4 gas and C3H2F4 gas as its components.Type: ApplicationFiled: January 25, 2016Publication date: September 22, 2016Inventors: Kotaro HORIKOSHI, Toshikazu HANAWA, Masatoshi AKAISHI, Yuji KIKUCHI
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Publication number: 20160276212Abstract: A semiconductor device is produced while keeping a short circuit margin between its interconnects. A method therefor includes a step in which when a multilayered resist is used to make an interconnect trench in an interlayer dielectric, a mixed gas including, as components thereof, at least CF4 gas, C3H2F4 gas and O2 gas is used to perform dry etching in order to form the multilayered resist.Type: ApplicationFiled: January 25, 2016Publication date: September 22, 2016Inventor: Kotaro HORIKOSHI
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Publication number: 20160064450Abstract: In a semiconductor device incorporating a CMOS image sensor, dangling bonds existing at the interface between a semiconductor substrate and an insulating film formed over the semiconductor substrate are selectively terminated with hydrogen. Hydrogen plasma processing is performed on a semiconductor wafer having a wiring formed in a region except a photodiode formation region of a pixel part and in a peripheral circuit part, from the side of a face where the wiring is formed. The hydrogen plasma processing uses a plasma etching apparatus which applies high-frequency power to an upper electrode for exciting hydrogen plasma and applies high-frequency power to a lower electrode for supplying hydrogen ions existing in the hydrogen plasma to the semiconductor wafer by electric field drift.Type: ApplicationFiled: August 18, 2015Publication date: March 3, 2016Inventors: Kotaro Horikoshi, Tatsunori Murata