Abstract: This silver paste includes a silver powder and a solvent, in which the silver powder includes first silver particles having a particle size of 100 nm or more and less than 500 nm, second silver particles having a particle size of 50 nm or more and less than 100 nm, and third silver particles having a particle size of 1000 nm or more and less than 10000 nm, and the content of the first silver particles is 12% by volume or more and 90% by volume or less, the content of the second silver particles is 1% by volume or more and 38% by volume or less, and the content of the third silver particles is 5% by volume or more and 80% by volume or less, regarding a total amount of the silver powder as 100% by volume.

Abstract: A semiconductor device includes, for example, an external terminal, an output element, a detecting element configured to detect occurrence of a negative voltage at the external terminal, and an off-circuit configured to forcibly turn off the output element when the detecting element detects occurrence of the negative voltage.

Abstract: An overcurrent protection circuit limits a monitoring target current to or below a limit current value IOCP. For example, it can operate so as to give the limit current value IOCP, when temperature Tj is lower than a threshold value Tx, a flat temperature response and, when temperature Tj is higher than the threshold value Tx, a negative temperature response. For another example, it can operate so as to set the limit current value IOCP, when temperature Tj is lower than a threshold value Tx, at a first limit current value IOCP having a flat temperature response and, when temperature Tj is higher than the threshold value Tx, at a second limit current value IOCP having a flat temperature response and lower than the first limit current value IOCP.

Abstract: A linear power source 1 comprises: an output transistor 10 that is connected between an input end of an input voltage VIN and an output end of an output voltage VOUT; a driver 30 for driving the output transistor 10 so that a feedback voltage VFB according to the output voltage VOUT matches a reference voltage VREF; a current detection unit 50 for detecting an output current IOUT flowing to the output transistor 10; and a voltage adjustment unit 40 for adjusting the reference voltage VREF or the feedback voltage VFB so that a differential voltage between a first voltage (for example, VIN itself) according to the input voltage VIN and a second voltage (for example, VOUT itself) according to the output voltage VOUT or the reference voltage VREF will not fall below an offset voltage Voffset according to the output current IOUT.

Abstract: A linear power source 1 comprises: an output transistor 10 that is connected between an input end of an input voltage VIN and an output end of an output voltage VOUT; a driver 30 for driving the output transistor 10 so that a feedback voltage VFB according to the output voltage VOUT matches a reference voltage VREF; a current detection unit 50 for detecting an output current IOUT flowing to the output transistor 10; and a voltage adjustment unit 40 for adjusting the reference voltage VREF or the feedback voltage VFB so that a differential voltage between a first voltage (for example, VIN itself) according to the input voltage VIN and a second voltage (for example, VOUT itself) according to the output voltage VOUT or the reference voltage VREF will not fall below an offset voltage Voffset according to the output current IOUT.

Abstract: A carbonaceous member contains graphene aggregates formed by deposition of a single layer or multiple layers of graphene, and flat graphite particles, and has a structure in which the flat graphite particles are laminated with the graphene aggregate as a binder so that basal surfaces of the graphite particles overlap with one another, and the basal surfaces of the flat graphite particles are oriented in one direction. A metal layer includes a metal plating layer directly formed on a surface (edge lamination surface) to which edge surfaces of the graphite particles laminated in the carbonaceous member are directed, and the metal plating layer is made of a metal having a thermal conductivity of 50 W/(m·k) or greater.

Abstract: Disclosed is a linear regulator for generating an output voltage from an input voltage with reference to a ground potential, the linear regulator including a semiconductor integrated circuit, and an external diode that is externally connected to the semiconductor integrated circuit, in which the semiconductor integrated circuit includes an input terminal, an output terminal, an output transistor, a parallel diode, and a control circuit, and an anode of the external diode is connected to a ground, and a cathode of the external diode is connected to the output terminal.

Abstract: Disclosed is a linear regulator for generating an output voltage from an input voltage with reference to a ground potential, the linear regulator including a semiconductor integrated circuit, and an external diode that is externally connected to the semiconductor integrated circuit, in which the semiconductor integrated circuit includes an input terminal, an output terminal, an output transistor, a parallel diode, and a control circuit, and an anode of the external diode is connected to a ground, and a cathode of the external diode is connected to the output terminal.

Abstract: A semiconductor device includes, for example, an external terminal, an output element, a detecting element configured to detect occurrence of a negative voltage at the external terminal, and an off-circuit configured to forcibly turn off the output element when the detecting element detects occurrence of the negative voltage.

Abstract: A linear power supply (1) includes a P-channel (or PNP) first output transistor (10) connected between an input terminal of an input voltage (Vin) and an output terminal of an output voltage (Vout), an N-channel (or NPN) second output transistor (20) connected in parallel to the first output transistor (10), and a control circuit (30) that switches between a first mode and a second mode according to the input voltage (Vin), in which the first mode uses the first output transistor (10) while the second mode uses the second output transistor (20) as an output transistor that generates the output voltage (Vout) from the input voltage (Vin).

Abstract: A linear power supply circuit includes a first output transistor of a P-channel type or pnp type which is connected between an input terminal to which an input voltage is input and an output terminal from which an output voltage is output; a first differential amplifier configured to amplify a difference between the output voltage or a feedback voltage according to the output voltage and a predetermined first reference voltage and output a first amplification voltage; a second differential amplifier configured to amplify a difference between the input voltage or a first monitor voltage according to the input voltage and the output voltage or a second monitor voltage according to the output voltage and output a second amplification voltage; and a first driver configured to generate a control voltage of the first output transistor according to the first amplification voltage and the second amplification voltage.

Abstract: A linear power supply (1) includes a P-channel (or PNP) first output transistor (10) connected between an input terminal of an input voltage (Vin) and an output terminal of an output voltage (Vout), an N-channel (or NPN) second output transistor (20) connected in parallel to the first output transistor (10), and a control circuit (30) that switches between a first mode and a second mode according to the input voltage (Vin), in which the first mode uses the first output transistor (10) while the second mode uses the second output transistor (20) as an output transistor that generates the output voltage (Vout) from the input voltage (Vin).

Abstract: This semiconductor device (10) has a heat source element (HSE) and a thermosensor element (TE) on a semiconductor chip (SCH). The profile of the heat source element (HSE) in plan view is recessed, and the depth (y1) of the recessed space (SP) is set to a size from 0.75 to 0.25 times that of the total length (y0). The center part (Tc) of the thermosensor element (TE) is situated in proximity to one side of a linking area (hse3), and is positioned in the space (SP) in such a way that length (y3) is shorter than length (x31a) and length (x31b). In so doing, heat source element temperature detection sensitivity and efficient positioning of the semiconductor elements can be achieved.

Abstract: A linear power supply circuit includes a first output transistor of a P-channel type or pnp type which is connected between an input terminal to which an input voltage is input and an output terminal from which an output voltage is output; a first differential amplifier configured to amplify a difference between the output voltage or a feedback voltage according to the output voltage and a predetermined first reference voltage and output a first amplification voltage; a second differential amplifier configured to amplify a difference between the input voltage or a first monitor voltage according to the input voltage and the output voltage or a second monitor voltage according to the output voltage and output a second amplification voltage; and a first driver configured to generate a control voltage of the first output transistor according to the first amplification voltage and the second amplification voltage.