Abstract: There is included (a) forming a first film having a predetermined composition on a first substrate by supplying a first processing gas to the first substrate; and (b) forming a second film having a composition different from the composition of the first film on the first substrate or a second substrate by performing a cycle including a supply of a second processing gas to the first substrate or the second substrate, wherein when performing (b) in a second state in which the second film adheres to an outermost surface of a member in the process container, the cycle is performed a predetermined m times, and wherein when performing (b) in a first state in which the first film adheres to the outermost surface, the cycle is performed m± times, or the cycle is performed the m times after performing a precoating process of forming the second film.

Abstract: There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.

Abstract: A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.

Abstract: There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.

Abstract: According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of manufacturing a semiconductor device, including: (a) forming a film on a substrate by supplying at least a gas including hydroxyl group to the substrate in a process chamber while maintaining a temperature of an inside of the process chamber at a first temperature; (b) changing the temperature of the inside of the process chamber from the first temperature to a second temperature higher than the first temperature; and (c) maintaining the temperature of the inside of the process chamber at the second temperature at least in a state that the substrate is not in the process chamber.

Abstract: A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.

Abstract: A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.

Abstract: A technique of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber by supplying a precursor and a reactant to the substrate under a first temperature at which the precursor and the reactant are not pyrolyzed, and purging, after performing the act of forming the film, an interior of the process chamber by supplying at least one selected from a group consisting of a plasma-excited gas, an alcohol, and a reducing agent into the process chamber under a second temperature equal to or lower than the first temperature.

Abstract: According to the present invention, when a film is formed on a substrate, a film-forming rate or film quality is stabilized. There is provided a method of manufacturing a semiconductor device, including: (a) forming a film on a substrate by supplying at least a gas including hydroxyl group to the substrate in a process chamber while maintaining a temperature of an inside of the process chamber at a first temperature; (b) changing the temperature of the inside of the process chamber from the first temperature to a second temperature higher than the first temperature; and (c) maintaining the temperature of the inside of the process chamber at the second temperature at least in a state that the substrate is not in the process chamber.

Abstract: An insect-resistant protein exhibiting a sufficient resistance to insects; an insect-resistance gene encoding the insect-resistant protein; a recombinant vector containing the insect-resistance gene; a host cell and a plant cell having the recombinant vector transfected thereinto; a transformant transformed by the insect-resistance gene and a method for producing the same; a protein recovered thereby; and an insect-resistant agent comprising them as active ingredients. In accordance with the present invention, the insect-resistant protein is derived from a plant.

Abstract: There are provided an insect-resistant protein exhibiting a sufficient resistance to insects even in a small amount; an insect-resistance gene encoding said insect-resistant protein; a recombinant vector containing said insect-resistance gene; a host cell and a plant cell having the recombinant vector transferred thereinto; a transformant transformed by the insect-resistance gene and a method for producing the same; a protein recovered thereby; and an insect-resistant agent comprising them as active ingredients.