Patents by Inventor Kotaro Miyatani
Kotaro Miyatani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230137865Abstract: A method of forming a crystalline structure film containing strontium, titanium, and oxygen on a substrate, includes: forming an amorphous structure film on a surface of a titanium nitride film formed on a surface of the substrate, the amorphous structure film containing strontium and oxygen and having a titanium content adjusted so that a content ratio of titanium to strontium based on the number of atoms becomes a value in a range of 0 or more and less than 1.0; and obtaining a crystalline structure film containing strontium, titanium and oxygen and containing titanium diffused from the titanium nitride film by heating the substrate, on which the amorphous structure film is formed, at a temperature of 500 degrees C. or higher.Type: ApplicationFiled: October 26, 2022Publication date: May 4, 2023Inventors: Takayuki KARAKAWA, Kotaro MIYATANI, Hideo NAKAMURA, Katsushige HARADA, Yuichiro MOROZUMI
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Publication number: 20220068637Abstract: A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.Type: ApplicationFiled: October 28, 2019Publication date: March 3, 2022Inventors: Kotaro MIYATANI, Naotaka NORO, Kouji SHIMOMURA, Ryoun SHIMAMOTO, Toshiyuki IKEUCHI, Younggi HONG
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Patent number: 9640388Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.Type: GrantFiled: February 12, 2016Date of Patent: May 2, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Shigeru Kasai, Kotaro Miyatani, Takuya Kurotori, Kenichi Kote, Yutaka Fujino, Akira Tanihara, Kohei Kawamura
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Publication number: 20170092588Abstract: A film forming method according to a first embodiment includes a formation step of forming wiring in a groove and/or a hole formed in an insulating film containing fluorine by using wiring metal containing a dopant for preventing intrusion of the fluorine from the insulating film. The film forming method according to a first embodiment further includes a step of performing heat treatment after the wiring is formed, whereby a high concentration portion containing the dopant in a concentration higher than inside the wiring is formed on an interface of the wiring.Type: ApplicationFiled: March 9, 2015Publication date: March 30, 2017Applicant: ZEON CORPORATIONInventors: Kotaro Miyatani, Takuya Kurotori, Kohei Kawamura
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Publication number: 20160240374Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.Type: ApplicationFiled: February 12, 2016Publication date: August 18, 2016Inventors: Shigeru KASAI, Kotaro MIYATANI, Takuya KUROTORI, Kenichi KOTE, Yutaka FUJINO, Akira TANIHARA, Kohei KAWAMURA
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Publication number: 20150170963Abstract: A semiconductor device manufacturing method includes: performing nitrogen plasma processing on an interlayer insulating film made of a fluorine containing carbon film having a recess formed in a surface thereof in a predetermined pattern; forming a Ru film directly on the fluorine containing carbon film subjected to the nitrogen plasma processing. The semiconductor device manufacturing method further includes filling a Cu film in the recess to form a Cu wiring.Type: ApplicationFiled: December 9, 2014Publication date: June 18, 2015Inventors: Tadahiro ISHIZAKA, Kotaro MIYATANI, Takuya KUROTORI
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Publication number: 20130130513Abstract: The interlayer insulating layer forming method for forming an interlayer insulating layer of a semiconductor device via a plasma CVD method includes: carrying a substrate into a depressurized processing container; supplying a plasma generating gas to a first space spaced apart from the substrate; exciting the plasma generating gas in the first space; and supplying a raw material gas including a boron compound that includes at least a hydrogen group or hydrocarbon group, to a second space between the first space and the substrate. Also, a semiconductor device is interconnected in a multilayer through an interlayer insulating layer having an amorphous structure including boron, carbon, and nitrogen, wherein, in the interlayer insulating layer, a hydrocarbon group or an alkyl amino group is mixed in the amorphous structure comprising hexagonal boron nitride and cubic boron nitride.Type: ApplicationFiled: July 20, 2011Publication date: May 23, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Kotaro Miyatani, Takenao Nemoto, Takuya Kurotori, Yasuo Kobayashi, Toshihisa Nozawa
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Patent number: 8383519Abstract: An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.Type: GrantFiled: February 5, 2008Date of Patent: February 26, 2013Assignee: Tokyo Electron LimitedInventors: Toshihisa Nozawa, Kotaro Miyatani, Toshiyasu Hori, Shigekazu Hirose
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Patent number: 8021975Abstract: A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a?2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.Type: GrantFiled: December 28, 2007Date of Patent: September 20, 2011Assignee: Tokyo Electron LimitedInventors: Kotaro Miyatani, Kohei Kawamura, Toshihisa Nozawa, Takaaki Matsuoka
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Publication number: 20100279510Abstract: An etching method by which a fluorine-added carbon film formed on a substrate is etched by plasma includes a first step of etching the fluorine-added carbon film with plasma of an oxygen-containing processing gas, and a second step of etching the fluorine-added carbon film with plasma of a fluorine-containing processing gas.Type: ApplicationFiled: February 5, 2008Publication date: November 4, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Toshihisa Nozawa, Kotaro Miyatani, Toshiyasu Hori, Shigekazu Hirose
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Publication number: 20090202720Abstract: A film forming and cleaning method according to the present invention comprises a temperature adjusting step performed between a film forming step and a cleaning step. In the film forming step, a process gas is supplied into a process vessel (1) to form a film on a substrate (W) in the process vessel (1), while a first part (4) inside the process vessel (1) is heated to a first temperature (for instance, 200 degrees Celsius) and a second part (side wall) inside the process vessel (1) is also heated to a second temperature (for instance, 90 degrees Celsius) lower than the first temperature. In the temperature adjusting step, the temperature of the first part (4) is lowered to a level closer to the second temperature. In the cleaning step, a cleaning gas is supplied into the process vessel (1) to remove deposits deposited on the surfaces of the first part and the second part.Type: ApplicationFiled: June 15, 2006Publication date: August 13, 2009Inventor: Kotaro Miyatani
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Publication number: 20090053895Abstract: There is provided a method for forming a porous dielectric film stably by: forming a surface densification layer by processing a surface of an SiOCH film formed by a plasma CVD process while using an organic silicon compound source; and releasing CHx groups or OH group from the SiOCH film underneath the surface densification layer by hydrogen plasma processing through the surface densification layer with a controlled rate.Type: ApplicationFiled: July 11, 2008Publication date: February 26, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuhiro OSHIMA, Shinji Ide, Yusaku Kashiwagi, Kotaro Miyatani
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Publication number: 20090026588Abstract: A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of “b=2×a·2”), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.Type: ApplicationFiled: December 28, 2007Publication date: January 29, 2009Applicant: Tokyo Electron LimitedInventors: Kotaro Miyatani, Kohei Kawamura, Toshihisa Nozawa, Takaaki Matsuoka
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Patent number: 6776874Abstract: A processing method and apparatus for removing a native oxide film from the surface of a subject to be treated, wherein plasma is generated from N2 and H2 gases and then activated to form an activated gas species, NF3 gas is added to the activated gas species to generate an activated gas of these three gases, the subject is cooled to not higher than a predetermined temperature by a cooling means, gas generated from the N2, H2 and NF3 gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film, the reactive film is sublimated and thus the native oxide film is removed if the subject is heated to a given temperature; a cluster system which includes the above apparatus and other apparatuses and which is capable of carrying a subject to be treated in an unreactive atmosphere.Type: GrantFiled: December 15, 2000Date of Patent: August 17, 2004Assignee: Tokyo Electron LimitedInventors: Yasuo Kobayashi, Kotaro Miyatani, Kaoru Maekawa
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Patent number: 6706334Abstract: Disclosed are a processing method and apparatus for removing a native oxide film from the surface of a subject to be treated. In this method and apparatus, gas generated from N2, H2 and NF3 gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film. If the subject is heated to a given temperature, the reactive film is sublimated and thus the native oxide film is removed. Plasma is generated from the N2 and H2 gases and then activated to form an activated gas species. The NF3 gas is added to the activated gas species to generate an activated gas of these three gases. In the step of forming the reactive film, the subject is cooled to not higher than a predetermined temperature by a cooling means. In the step of sublimating the reactive film, the subject is lifted up to a predetermined heating position.Type: GrantFiled: November 10, 1999Date of Patent: March 16, 2004Assignee: Tokyo Electron LimitedInventors: Yasuo Kobayashi, Kotaro Miyatani, Kaoru Maekawa
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Publication number: 20010015261Abstract: Disclosed are a processing method and apparatus for removing a native oxide film from the surface of a subject to be treated. In this method and apparatus, gas generated from N2, H2 and NF3 gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film. If the subject is heated to a given temperature, the reactive film is sublimated and thus the native oxide film is removed. Plasma is generated from the N2 and H2 gases and then activated to form an activated gas species. The NF3 gas is added to the activated gas species to generate an activated gas of these three gases. In the step of forming the reactive film, the subject is cooled to not higher than a predetermined temperature by a cooling means. In the step of sublimating the reactive film, the subject is lifted up to a predetermined heating position.Type: ApplicationFiled: December 15, 2000Publication date: August 23, 2001Applicant: TOKYO ELECTRO LIMITEDInventors: Yasuo Kobayashi, Kotaro Miyatani, Kaoru Maekawa