Patents by Inventor Kotaro Nagatsu
Kotaro Nagatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240084419Abstract: One aspect of the present invention relates to a recovery method of 226Ra, and the recovery method of 226Ra includes a step (A1) of immersing a solid-state 226Ra containing substance and a carrier having a function of adsorbing 226Ra ions in a processing solution, and then irradiating the processing solution with ultrasonic waves.Type: ApplicationFiled: December 27, 2021Publication date: March 14, 2024Applicants: NIHON MEDI-PHYSICS CO., LTD., NATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECHNOLOGYInventors: Yoshio HONDA, Taku ITO, Jun ICHINOSE, Kotaro NAGATSU, Hisashi SUZUKI
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Publication number: 20230364275Abstract: A method for producing an 225Ac solution includes a step (I) of irradiating a 226Ra target with particles to generate two or more actinium radioisotopes (Ac) including at least 225Ac, a step (II) of dissolving the 226Ra target after the aforementioned step to obtain a solution (1), a step (III) of separating 226Ra and Ac contained in the solution (1) to obtain a solution (2), a step (IV) of allowing Ac contained in the solution (2) other than 225Ac to decay to obtain a solution (3), and a step (V) of separating Ra and Ac contained in the solution (3) to obtain a solution (4). The solution (4) is used to produce a medicine that contains, as an active ingredient, a conjugate between a chelating agent that has formed a complex with 225Ac, and a targeting agent.Type: ApplicationFiled: July 10, 2023Publication date: November 16, 2023Applicants: NIHON MEDI-PHYSICS CO., LTD., NATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECHNOLOGYInventors: Yoshio HONDA, Taku ITO, Jun ICHINOSE, Hiroaki ICHIKAWA, Tomoyuki IMAI, Kotaro NAGATSU, Hisashi SUZUKI
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Patent number: 11752223Abstract: A method for producing an 225Ac solution includes a step (I) of irradiating a 226Ra target with particles to generate two or more actinium radioisotopes (Ac) including at least 225Ac, a step (II) of dissolving the 226Ra target after the aforementioned step to obtain a solution (1), a step (III) of separating 226Ra and Ac contained in the solution (1) to obtain a solution (2), a step (IV) of allowing Ac contained in the solution (2) other than 225Ac to decay to obtain a solution (3), and a step (V) of separating Ra and Ac contained in the solution (3) to obtain a solution (4). The solution (4) is used to produce a medicine that contains, as an active ingredient, a conjugate between a chelating agent that has formed a complex with 225Ac, and a targeting agent.Type: GrantFiled: July 20, 2022Date of Patent: September 12, 2023Assignees: NIHON MEDI-PHYSICS CO., LTD., NATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECHNOLOGYInventors: Yoshio Honda, Taku Ito, Jun Ichinose, Hiroaki Ichikawa, Tomoyuki Imai, Kotaro Nagatsu, Hisashi Suzuki
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Publication number: 20220370651Abstract: A method for producing an 225Ac solution includes a step (I) of irradiating a 226Ra target with particles to generate two or more actinium radioisotopes (Ac) including at least 225Ac, a step (II) of dissolving the 226Ra target after the aforementioned step to obtain a solution (1), a step (III) of separating 226Ra and Ac contained in the solution (1) to obtain a solution (2), a step (IV) of allowing Ac contained in the solution (2) other than 225Ac to decay to obtain a solution (3), and a step (V) of separating Ra and Ac contained in the solution (3) to obtain a solution (4). The solution (4) is used to produce a medicine that contains, as an active ingredient, a conjugate between a chelating agent that has formed a complex with 225Ac, and a targeting agent.Type: ApplicationFiled: July 20, 2022Publication date: November 24, 2022Applicants: NIHON MEDI-PHYSICS CO., LTD., NATIONAL INSTITUTES FOR QUANTUM SCIENCE AND TECHNOLOGYInventors: Yoshio HONDA, Taku ITO, Jun ICHINOSE, Hiroaki ICHIKAWA, Tomoyuki IMAI, Kotaro NAGATSU, Hisashi SUZUKI
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Publication number: 20220157583Abstract: Provided is a niobium sputtering target having improved film thickness uniformity throughout the target life. In the niobium sputtering target, a rate of change in a {111} area ratio of each of an upper, central, and lower portions of the sputtering target, as represented by the following equation (2), is 2.Type: ApplicationFiled: January 28, 2020Publication date: May 19, 2022Inventors: Yuki Yamada, Kotaro Nagatsu
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Patent number: 11177119Abstract: Provided is a tantalum sputtering target that contributes to improvement of film thickness uniformity during a high-power sputtering. A tantalum sputtering target having a purity of 99.99% by mass or more and an average value of Vickers hardness on a sputtering surface of from 85 to 110 Hv, the tantalum sputtering target satisfying both of the following conditions (1) and (2): (1) when a cross section perpendicular to the sputtering surface is measured by EBSP, an average value of Kernel Average Misorientation values (KAM values) is from 0.2° to 2.8°; and (2) when a cross section perpendicular to the sputtering surface is measured by EBSP, an average value of orientation area ratios of a {100} plane oriented at a misorientation of within 15° relative to a normal direction of the sputtering surface is 20% or more.Type: GrantFiled: January 24, 2018Date of Patent: November 16, 2021Assignee: JX Nippon Mining & Metals CorporationInventor: Kotaro Nagatsu
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Publication number: 20210172057Abstract: Provided is a joined body of a target material and a backing plate, the joined body comprising: a target material containing Ta; and a backing plate joined to the target material, wherein a tensile strength between the target material and the backing plate is 20 kg/mm2 or more, and the target material has an average hydrogen content of 7 ppm by volume or less.Type: ApplicationFiled: September 5, 2019Publication date: June 10, 2021Inventors: Kotaro Nagatsu, Yuki Yamada
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Patent number: 10984992Abstract: A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance.Type: GrantFiled: May 18, 2016Date of Patent: April 20, 2021Assignee: JX Nippon Mining & Metals CorporationInventors: Shuhei Murata, Yasuhiro Yamakoshi, Kotaro Nagatsu
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Patent number: 10658163Abstract: Provided is a tantalum target, wherein, when a direction normal to a rolling surface (ND), which is a cross section perpendicular to a sputtering surface of a target, is observed via an electron backscatter diffraction pattern method, an area ratio of crystal grains of which a {100} plane is oriented in the ND is 30% or more. An object of the present invention is to provide a tantalum sputtering target in which a deposition rate can be appropriately controlled under high-power sputtering conditions. When sputter-deposition is performed using this kind of a tantalum target, it is possible to form a thin film having superior film thickness uniformity and improve the productivity of the thin film formation process, even for micro wiring.Type: GrantFiled: May 17, 2016Date of Patent: May 19, 2020Assignee: JX NIPPON MINING & METALS CORPORATIONInventors: Kotaro Nagatsu, Shinichiro Senda
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Publication number: 20200131622Abstract: Provided is a tantalum sputtering target that contributes to improvement of film thickness uniformity during a high-power sputtering. A tantalum sputtering target having a purity of 99.99% by mass or more and an average value of Vickers hardness on a sputtering surface of from 85 to 110 Hv, the tantalum sputtering target satisfying both of the following conditions (1) and (2): (1) when a cross section perpendicular to the sputtering surface is measured by EBSP, an average value of Kernel Average Misorientation values (KAM values) is from 0.2° to 2.8°; and (2) when a cross section perpendicular to the sputtering surface is measured by EBSP, an average value of orientation area ratios of a {100} plane oriented at a misorientation of within 15° relative to a normal direction of the sputtering surface is 20% or more.Type: ApplicationFiled: January 24, 2018Publication date: April 30, 2020Inventor: Kotaro Nagatsu
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Patent number: 10570505Abstract: Provided is a tantalum sputtering target, which includes an area ratio of crystal grains of which a {111} plane is oriented in a direction normal to a rolling surface (ND) is 35% or more when the ND, which is a cross section orthogonal to a sputtering surface of a target, is observed via Electron Backscatter Diffraction Pattern method. The object of the present invention is to provide a tantalum sputtering target in which a sputtered material can be uniformly deposited on a wafer surface under high-power sputtering conditions by increasing the straightness of the sputtered material. By using this kind of tantalum target for sputter-deposition, it is possible to improve the film thickness uniformity and the throughput of deposition even for fine wiring.Type: GrantFiled: May 17, 2016Date of Patent: February 25, 2020Assignee: JX Nippon Mining & Materials CorporationInventors: Kotaro Nagatsu, Shinichiro Senda
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Patent number: 10490393Abstract: A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less. By controlling the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed.Type: GrantFiled: December 6, 2013Date of Patent: November 26, 2019Assignee: JX Nippon Mining & Metals CorporationInventors: Shinichiro Senda, Kotaro Nagatsu
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Patent number: 10407766Abstract: A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an average crystal grain size is 50 ?m or more and 150 ?m or less, and a variation in a crystal grain size is 30 ?m or less. A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less, an average crystal grain size is 50 ?m or more and 150 ?m or less, and a variation in a crystal grain size is 30 ?m or less. By controlling the crystal grain size of the target, or the crystal grain size and the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed.Type: GrantFiled: December 6, 2013Date of Patent: September 10, 2019Assignee: JX Nippon Mining & Metals CorporationInventors: Shinichiro Senda, Kotaro Nagatsu
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Patent number: 10354846Abstract: The present invention is a sputtering target-backing plate assembly in which the sputtering target is made from Ta having a 02% proof stress of 150 to 200 MPa, and the backing plate is made from a Cu alloy having a 0.2% proof stress of 60 to 200 MPa. The present invention aims to increase the uniformity of the film thickness as well as increase the deposition rate and improve the productivity by reducing, as much as possible, the plastic deformation of the sputtering target caused by the repeated thermal expansion and contraction of the sputtering target-backing plate assembly as a bimetal.Type: GrantFiled: October 29, 2014Date of Patent: July 16, 2019Assignee: JX Nippon Mining & Metals CorporationInventors: Kotaro Nagatsu, Shinichiro Senda
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Publication number: 20180144912Abstract: A sputtering target comprising a flat part and a tapered part, wherein a machined groove for use in ignition is arranged on a sputtering surface of the target. With the sputtering target of the present invention, the ignition failure rate during ignition (plasma ignition) can be reduced, and the sputtering process can be started stably. It is thereby possible to shorten the downtime of the device, and consequently contribute to improved throughput and enhanced cost performance.Type: ApplicationFiled: May 18, 2016Publication date: May 24, 2018Inventors: Shuhei Murata, Yasuhiro Yamakoshi, Kotaro Nagatsu
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Publication number: 20180105926Abstract: Provided is a tantalum sputtering target, which includes an area ratio of crystal grains of which a {111} plane is oriented in a direction normal to a rolling surface (ND) is 35% or more when the ND, which is a cross section orthogonal to a sputtering surface of a target, is observed via Electron Backscatter Diffraction Pattern method. The object of the present invention is to provide a tantalum sputtering target in which a sputtered material can be uniformly deposited on a wafer surface under high-power sputtering conditions by increasing the straightness of the sputtered material. By using this kind of tantalum target for sputter-deposition, it is possible to improve the film thickness uniformity and the throughput of deposition even for fine wiring.Type: ApplicationFiled: May 17, 2016Publication date: April 19, 2018Inventors: Kotaro Nagatsu, Shinichiro Senda
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Patent number: 9890452Abstract: Provided is a tantalum sputtering target, which is characterized that an average crystal grain size of the target is 50 ?m or more and 200 ?m or less, and variation of a crystal grain size in the target plane is 40% or higher and 60% or less. This invention aims to provide a tantalum sputtering target capable of improving the uniformity of the film thickness and reducing the variation of the resistance value (sheet resistance).Type: GrantFiled: March 19, 2013Date of Patent: February 13, 2018Assignee: JX Nippon Mining & Metals CorporationInventors: Kotaro Nagatsu, Shinichiro Senda
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Patent number: 9859104Abstract: A tantalum sputtering target, wherein on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane is 70% or less, an orientation rate of a (222) plane is 10% or more, an average crystal grain size is 50 ?m or more and 150 ?m or less, and a variation in a crystal grain size is 30 ?m or less. By controlling the crystal orientation of the target, it is possible to increase the sputter rate, consequently deposit the required film thickness in a short period of time, and improve the throughput. In addition, by controlling the crystal grain size on the sputtering surface of the target, an effect is yielded in that the abnormal discharge during sputtering can be suppressed.Type: GrantFiled: February 28, 2014Date of Patent: January 2, 2018Assignee: JX Nippon Mining & Metals CorporationInventors: Shinichiro Senda, Kotaro Nagatsu
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Publication number: 20170372879Abstract: Provided is a tantalum target, wherein, when a direction normal to a rolling surface (ND), which is a cross section perpendicular to a sputtering surface of a target, is observed via an electron backscatter diffraction pattern method, an area ratio of crystal grains of which a {100} plane is oriented in the ND is 30% or more. An object of the present invention is to provide a tantalum sputtering target in which a deposition rate can be appropriately controlled under high-power sputtering conditions. When sputter-deposition is performed using this kind of a tantalum target, it is possible to form a thin film having superior film thickness uniformity and improve the productivity of the thin film formation process, even for micro wiring.Type: ApplicationFiled: May 17, 2016Publication date: December 28, 2017Inventors: Kotaro Nagatsu, Shinichiro Senda
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Publication number: 20160086777Abstract: The present invention is a sputtering target-backing plate assembly in which the sputtering target is made from Ta having a 02% proof stress of 150 to 200 MPa, and the backing plate is made from a Cu alloy having a 0.2% proof stress of 60 to 200 MPa. The present invention aims to increase the uniformity of the film thickness as well as increase the deposition rate and improve the productivity by reducing, as much as possible, the plastic deformation of the sputtering target caused by the repeated thermal expansion and contraction of the sputtering target-backing plate assembly as a bimetal.Type: ApplicationFiled: October 29, 2014Publication date: March 24, 2016Inventors: Kotaro Nagatsu, Shinichiro Senda