Abstract: A semiconductor memory device of an embodiment includes a first region having a first stack and a first pillar, and a second region having a second stack and a second pillar. The first stack comprises an alternate stack in a first direction of a plurality of first insulating films containing oxygen and a plurality of first conductive films. The first pillar comprises a semiconductor layer and extends in the first direction within the first stack. The second stack comprises a repeated stack in the first direction of the plurality of first insulating films, a plurality of second insulating films, and a plurality of third insulating films in the order of the first insulating film, the second insulating film, and the third insulating film. The second insulating film contains nitrogen. The third insulating film contains nitrogen and at least one of oxygen and hydrogen. The second pillar comprises a semiconductor layer and extends in the first direction within the second stack.

Abstract: A hydraulic excavator as an electric work machine includes an electric motor, a machine-body frame, a battery unit that stores electric power to drive the electric motor, and a fixing mechanism that fixes the battery unit to the machine-body frame. The fixing mechanism has an upper plate and a lower plate that sandwich the battery unit from an up-down direction and a support portion that supports the lower plate on the machine-body frame.

Abstract: A hydraulic excavator as an electric work machine includes an electric motor, a plurality of battery units that store electric power to drive the electric motor, and a machine-body frame on which the electric motor and the plurality of battery units are mounted. The plurality of battery units are located in parallel in one direction and aligned in a direction perpendicular to the one direction in the machine-body frame. At least two of the plurality of battery units have end parts located by being shifted from each other in one direction, respectively.

Abstract: A semiconductor manufacturing apparatus includes at least one UV lamp provided at a position facing a surface of a semiconductor substrate arranged to irradiate the surface of the semiconductor substrate with UV light, and a shutter disposed between the surface of the semiconductor substrate and the at least one UV lamp and configured to block UV light emitted by the UV lamp. The shutter includes a first movable part movable in a first direction being an in-plane direction parallel to the semiconductor substrate, and a second movable part movable in a second direction being an in-plane direction perpendicular to the first direction, the second movable part being movable independently of the first movable part.

Abstract: A sound pickup device is provided including a clamp part for fastening a hoop of a drum, one case fixed to an outer edge of the drum by fastening the hoop with the clamp part, a first output means detecting vibration of a striking surface of the drum, generating a musical sound signal based on the detected vibration, a second output means detecting a performance sound generated by the vibration of the striking surface, generating a sound pickup signal based on the detected performance sound, a third output means mixing the musical sound signal and the sound pickup signal outputted from the first and second output means, a selection means selecting at least one of the first to third output means for output; and a housing part housing a battery. The first output means, the second output means, the third output means, and the housing part are disposed in the one case.

Abstract: A semiconductor manufacturing apparatus includes at least one UV lamp provided at a position facing a surface of a semiconductor substrate arranged to irradiate the surface of the semiconductor substrate with UV light, and a shutter disposed between the surface of the semiconductor substrate and the at least one UV lamp and configured to block UV light emitted by the UV lamp. The shutter includes a first movable part movable in a first direction being an in-plane direction parallel to the semiconductor substrate, and a second movable part movable in a second direction being an in-plane direction perpendicular to the first direction, the second movable part being movable independently of the first movable part.

Abstract: An electronic musical instrument that is easy to use is provided. The electronic musical instrument includes a packing box (2) formed into a box shape capable of accommodating a converter (4) and an output device (5). The packing box (2) has an opening portion (21a) formed in a side surface, and thus it is possible to use the packing box (2) as a percussion instrument simulating a Cajon taking the opening portion (21) a as a sound hole. That is, an electronic musical instrument (1) is used employing the packing box (2) that simulates a Cajon, and thus labor for preparing a musical instrument is saved. Thus, the electronic musical instrument (1) is easy to use.

Abstract: A sound pickup device is provided including a clamp part for fastening a hoop of a drum, one case fixed to an outer edge of the drum by fastening the hoop with the clamp part, a first output means detecting vibration of a striking surface of the drum, generating a musical sound signal based on the detected vibration, a second output means detecting a performance sound generated by the vibration of the striking surface, generating a sound pickup signal based on the detected performance sound, a third output means mixing the musical sound signal and the sound pickup signal outputted from the first and second output means, a selection means selecting at least one of the first to third output means for output; and a housing part housing a battery. The first output means, the second output means, the third output means, and the housing part are disposed in the one case.

Abstract: According to one embodiment, a semiconductor memory device includes: a substrate; a first stacked body; a semiconductor film; a charge storage film; and a second stacked body. The first stacked body includes: a plurality of first insulating layers; and a plurality of electrode layers. The second stacked body includes: a plurality of second insulating layers; a first insulating film provided between the plurality of second insulating layers and including a material different from that of the plurality of first insulating layers, the plurality of second insulating layers, and the plurality of electrode layers; and a second insulating film provided between the first insulating film and the substrate via the plurality of second insulating layers, including a same material as the first insulating film, and having lower film density than the first insulating film.

Abstract: According to one embodiment, a semiconductor memory device includes: a substrate; a first stacked body; a semiconductor film; a charge storage film; and a second stacked body. The first stacked body includes: a plurality of first insulating layers; and a plurality of electrode layers. The second stacked body includes: a plurality of second insulating layers; a first insulating film provided between the plurality of second insulating layers and including a material different from that of the plurality of first insulating layers, the plurality of second insulating layers, and the plurality of electrode layers; and a second insulating film provided between the first insulating film and the substrate via the plurality of second insulating layers, including a same material as the first insulating film, and having lower film density than the first insulating film.

Abstract: A semiconductor device includes: a first insulating film formed on a substrate and having a first interconnect; a second insulating film as a liner film formed on the first insulating film and the first interconnect so as to contact the first insulating film; and a third insulating film formed on the second insulating film so as to contact the second insulating film. The second insulating film includes pores.

Abstract: A semiconductor device includes: a semiconductor substrate; a first insulating film (third insulating film 24) formed on the semiconductor substrate, having a first trench (second interconnect trench 28), and having a composition ratio varying along the depth from an upper face of the first insulating film; and a first metal interconnect (second metal interconnect 25) filling the first trench (second interconnect trench 28). The mechanical strength in an upper portion of the first insulating film (third insulating film 24) is higher than that in the other portion of the insulating film (third insulating film 24).

Abstract: A first insulating film is formed on or above a substrate, and a first conductor is formed in an upper portion of the formed first insulating film. Then, a second insulating film is formed on the first insulating film so as to cover the first conductor. Then, a film quality alteration process is performed for the second insulating film. Moreover, a third insulating film is formed on the second insulating film, and a curing process is performed for the formed third insulating film.

Abstract: By covering inner surfaces of a wiring groove 26c and a via hole 27a with a fourth insulation film 25 containing porogen during a manufacturing process of a semiconductor device, an increase in the relative permittivity of the fourth insulation film 25 that is a low-permittivity film on the inner surfaces of the wiring groove 26c and the via hole 27a can be suppressed in a manufacturing process of a semiconductor device such as a barrier metal sputtering process.

Abstract: By covering inner surfaces of a wiring groove 26c and a via hole 27a with a fourth insulation film 25 containing porogen during a manufacturing process of a semiconductor device, an increase in the relative permittivity of the fourth insulation film 25 that is a low-permittivity film on the inner surfaces of the wiring groove 26c and the via hole 27a can be suppressed in a manufacturing process of a semiconductor device such as a barrier metal sputtering process.