Patents by Inventor Kotaro Okamoto

Kotaro Okamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190248766
    Abstract: Provided is an additive for imparting ultraviolet absorbency, or an additive for imparting a high refractive index, which has satisfactory compatibility with a resin serving as a matrix and can maintain high transparency even if added in high concentrations. Also provided is an additive with which the function of imparting both ultraviolet absorbency and a high refractive index can be realized by means of one kind of additive. This additive is represented by the following Formula (I): wherein at least one of R1a to R9a is a monovalent sulfur-containing group represented by the following Formula (i-1) or Formula (i-2): ?R10a?mSH??(i-1) ?R11a?nS?R12a—S?pR13a??(i-2) wherein R10a to R12a each represent a divalent hydrocarbon group or the like; and R13a represents a monovalent hydrocarbon group or the like.
    Type: Application
    Filed: April 25, 2019
    Publication date: August 15, 2019
    Applicants: Miyoshi Oil & Fat Co., Ltd., Tokai Optical Co., Ltd.
    Inventors: Koji KAWAI, Kotaro KANEKO, Nobuhiro KANEKO, Yuichi SHISHINO, Kuniyoshi OKAMOTO
  • Patent number: 10316024
    Abstract: Provided is an additive for imparting ultraviolet absorbency, or an additive for imparting a high refractive index, which has satisfactory compatibility with a resin serving as a matrix and can maintain high transparency even if added in high concentrations. Also provided is an additive with which the function of imparting both ultraviolet absorbency and a high refractive index can be realized by means of one kind of additive. This additive is represented by the following Formula (I): wherein at least one of R1a to R9a is a monovalent sulfur-containing group represented by the following Formula (i-1) or Formula (i-2): wherein R10a to R12a each represent a divalent hydrocarbon group or the like; and R13a represents a monovalent hydrocarbon group or the like.
    Type: Grant
    Filed: August 5, 2015
    Date of Patent: June 11, 2019
    Assignees: MIYOSHI OIL & FAT CO., LTD., TOKAI OPTICAL CO., LTD.
    Inventors: Koji Kawai, Kotaro Kaneko, Nobuhiro Kaneko, Yuichi Shishino, Kuniyoshi Okamoto
  • Patent number: 4963503
    Abstract: A liquid crystal display device comprises, a plurality of display electrodes which are selectively energized through on-off control of thin film transistors. In order to reduce the channel length of the thin film transistors to increase operation speed and obtain uniform characteristics each display electrode and an associated transistor source electrode is formed on one of a pair of transparent substrates of the liquid crystal display device, a semiconductor layer is formed between the display electrode and source electrode, a gate insulating film is formed on the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film between the display electrode and source electrode. Then, ions are implanted into the semiconductor layer with the gate electrode used as a mask, thus rendering portions of the semiconductor layer contiguous to the display electrode and source electrode into ohmic layers.
    Type: Grant
    Filed: March 29, 1989
    Date of Patent: October 16, 1990
    Assignee: Hosiden Electronics Co., Ltd.
    Inventors: Shigeo Aoki, Yasuhiro Ugai, Katsumi Miyake, Kotaro Okamoto
  • Patent number: 4948231
    Abstract: A liquid crystal display device comprises a plurality of display electrodes which are selectively energized through on-off control of thin film transistors. In order to reduce the channel length of the thin film transistors to increase operation speed and obtain uniform characteristics, each display electrode and an associated transistor source electrode is formed on one of a pair of transparent substrates of the liquid crystal display device, a semiconductor layer is formed between the display layer and source electrode, a gate insulating film is formed on the semiconductor electrode, and a gate electrode is formed on a portion of the gate insulating film between the display electrode and source electrode. Then, ions are implanted into the semiconductor layer with the gate electrode used as a mask, thus rendering portions of the semiconductor layer contiguous to the display electrode and source electrode into ohmic layers.
    Type: Grant
    Filed: January 18, 1989
    Date of Patent: August 14, 1990
    Assignee: Hosiden Electronics Co. Ltd.
    Inventors: Shigeo Aoki, Yasuhiro Ugai, Katsumi Miyake, Kotaro Okamoto
  • Patent number: 4687298
    Abstract: A liquid crystal display device is disclosed, which comprises first and second transparent substrates facing each other, a liquid crystal sealed between the transparent substrates, a plurality of display electrodes formed on the inner surface of the first transparent substrate, thin film transistors also formed on the first transparent substrate inner surface and each connected to each display electrode, and a transparent common electrode formed on the inner surface of the second transparent substrate, and in which the thin film transistors are selectively controlled to selectively drive the display electrodes for display. The resistance of semiconductor layers of the thin film transistors is reduced by external light to result in deterioration of the contrast of display. According to the invention, an opaque metal layer is formed between each thin film transistor and the first transparent substrate, and an insulating film is provided between the opaque metal layer and thin film transistor.
    Type: Grant
    Filed: December 4, 1985
    Date of Patent: August 18, 1987
    Assignee: Hosiden Electronics, Ltd.
    Inventors: Shigeo Aoki, Yasuhiro Ugai, Katsumi Miyake, Kotaro Okamoto
  • Patent number: 4679062
    Abstract: An impurity-doped amorphous silicon semiconductor layer is deposited on a substrate, source and drain electrodes are deposited apart from each other on the amorphous silicon semiconductor layer in ohmic contact therewith and a gate electrode is deposited on the amorphous silicon semiconductor layer in Schottky contact therewith between the source and drain electrodes, thereby forming a thin film transistor.
    Type: Grant
    Filed: December 16, 1985
    Date of Patent: July 7, 1987
    Assignee: Hosiden Electronics Co., Ltd.
    Inventor: Kotaro Okamoto