Abstract: An optical unit of a head-mounted display device includes: a light-emitting unit configured to condense light emitted from a light source; a display unit configured to generate image light by using the light condensed in the light-emitting unit as illumination light; a projection lens configured to project the image light transmitted from the display unit; an optical axis conversion element configured to displace an optical axis of the image light projected from the projection lens; and a light-guide plate configured to receive the image light of which the optical axis is displaced by the optical axis conversion element, and to guide the image light to a wearer's pupil.

Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Abstract: This liquid treatment method for substrates involves performing: a liquid treatment step for liquid-treating a substrate with a treatment liquid; a rinse treatment step for rinsing the liquid-treated substrate with a rinsing liquid; a water-repellency treatment step for subjecting the rinsed substrate to a water-repellency treatment using a water-repellency-imparting solution; next, a substitution treatment step for subjecting the substrate subjected to the water-repellency treatment to a substitution treatment acceleration liquid; a cleaning treatment step for cleaning the substrate subjected to the water-repellency treatment by using a cleaning solution; and thereafter, a drying treatment step for substituting the cleaning solution with a drying solution having a higher volatility than that of the cleaning solution, and removing the drying solution from the substrate. Thus, it is possible to prevent pattern collapse during the drying treatment, and to decrease particles caused by watermarks.

Abstract: Disclosed is a liquid processing method of drying a substrate held horizontally after supplying deionized water to the substrate. The liquid processing method includes: supplying the deionized water to a front surface of the substrate; supplying a first solvent to the front surface of the substrate after supplying the deionized water; supplying a water-repellent agent to the front surface of the substrate to impart water-repellency to the front surface of the substrate; supplying a second solvent to the front surface of the substrate to which water-repellency is imparted; and removing the second solvent from the front surface of the substrate. A specific gravity of the first solvent is smaller than a specific gravity of the water-repellent agent, and a specific gravity of the second solvent is larger than the specific gravity of the water-repellent agent.

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract: A film removing device includes an approach stage having a flat approach part having a surface substantially flush with the surface of a substrate supported on a support member. The flat approach part faces a first side surface of the substrate at a corner of the substrate where the first side surface and a second side surface of the substrate join. A film removing nozzle spouts a solvent toward a peripheral part of the substrate and sucks a solution while being moved along the second side surface and the approach stage. A gas is spouted into a gap between the flat approach part and the corner of the substrate so that the gas flows through the gap toward the second side surface.

Abstract: A film removing device includes an approach stage having a flat approach part having a surface substantially flush with the surface of a substrate supported on a support member. The flat approach part faces a first side surface of the substrate at a corner of the substrate where the first side surface and a second side surface of the substrate join. A film removing nozzle spouts a solvent toward a peripheral part of the substrate and sucks a solution while being moved along the second side surface and the approach stage. A gas is spouted into a gap between the flat approach part and the corner of the substrate so that the gas flows through the gap toward the second side surface.

Abstract: A film removing device includes an approach stage having a flat approach part having a surface substantially flush with the surface of a substrate supported on a support member. The flat approach part faces a first side surface of the substrate at a corner of the substrate where the first side surface and a second side surface of the substrate join. A film removing nozzle spouts a solvent toward a peripheral part of the substrate and sucks a solution while being moved along the second side surface and the approach stage. A gas is spouted into a gap between the flat approach part and the corner of the substrate so that the gas flows through the gap toward the second side surface.

Abstract: A film removing device includes an approach stage having a flat approach part having a surface substantially flush with the surface of a substrate supported on a support member. The flat approach part faces a first side surface of the substrate at a corner of the substrate where the first side surface and a second side surface of the substrate join. A film removing nozzle spouts a solvent toward a peripheral part of the substrate and sucks a solution while being moved along the second side surface and the approach stage. A gas is spouted into a gap between the flat approach part and the corner of the substrate so that the gas flows through the gap toward the second side surface.