Patents by Inventor Kotaro Tanigawa

Kotaro Tanigawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230051327
    Abstract: A dielectric film for a film capacitor includes (A) a thermoplastic resin and (B) a metal diketone complex.
    Type: Application
    Filed: December 7, 2020
    Publication date: February 16, 2023
    Applicants: KYOCERA Corporation, Shinshu University
    Inventors: Kazuya ETOU, Kotaro TANIGAWA, Yasushi MURAKAMI
  • Publication number: 20230040012
    Abstract: An insulating resin includes (A) a thermoplastic resin and (B) a metal diketone complex.
    Type: Application
    Filed: December 7, 2020
    Publication date: February 9, 2023
    Applicants: KYOCERA Corporation, Shinshu University
    Inventors: Kazuya ETOU, Kotaro TANIGAWA, Yasushi MURAKAMI
  • Publication number: 20140345693
    Abstract: A photoelectric conversion device and a method for producing a photoelectric conversion device are disclosed. The photoelectric conversion device includes a light-absorbing layer. The light-absorbing layer contains a chalcopyrite-based compound, and has a peak intensity ratio IB/IA in a range of 3 to 9, where IA represents a peak intensity of the peak formed by combining a peak of a (220) plane and a peak of a (204) plane in X-ray diffraction, and IB represents a peak intensity of a (112) plane.
    Type: Application
    Filed: August 17, 2012
    Publication date: November 27, 2014
    Applicant: KYOCERA CORPORATION
    Inventors: Hideaki Asao, Shintaro Kubo, Shuji Nakazawa, Yusuke Miyamichi, Tatsuya Domoto, Keizo Takeda, Kazuki Yamada, Kotaro Tanigawa, Hiromitsu Ogawa
  • Publication number: 20120319244
    Abstract: A method for manufacturing a semiconductor layer according to an embodiment of the present invention comprises preparing a first compound, preparing a second compound, making a semiconductor layer forming solution, and forming a semiconductor layer including a group compound by using this semiconductor layer forming solution. The first compound contains a first chalcogen-element-containing organic compound, a first Lewis base, a I-B group element, and a first III-B group element. The second compound contains an organic ligand and a second III-B group element. The semiconductor layer forming solution contains the first compound, the second compound, and an organic solvent.
    Type: Application
    Filed: January 25, 2011
    Publication date: December 20, 2012
    Applicant: KYOCERA CORPORATION
    Inventors: Seiji Oguri, Keizo Takeda, Koichiro Yamada, Kotaro Tanigawa, Isamu Tanaka, Riichi Sasamori, Hiromitsu Ogawa